CMP polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material

Patent metadata

Field	Value
Publication number	US-9447306-B2
Application number	US-201213981766-A
Country	US
Kind code	B2
Filing date	Jan 20, 2012
Priority date	Jan 25, 2011
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A CMP polishing liquid comprises water and an abrasive particle, wherein the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, the first particle contains silica, the second particle contains cerium hydroxide, and the pH of the CMP polishing liquid is equal to or lower than 9.5.

First claim

The invention claimed is:

1. A CMP polishing liquid comprising:
water; and
an abrasive particle, wherein
the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, wherein the second particle has a diameter of 0.1 to 100 nm,
the first particle contains silica,
the second particle is a cerium hydroxide particle, and
pH of the CMP polishing liquid is equal to or lower than 9.5.

2. The CMP polishing liquid according to claim 1 used for polishing a surface to be polished that contains silicon oxide.

3. A method for polishing a base material, comprising a step of polishing a surface to be polished of a base material by using the CMP polishing liquid according to claim 1 .

4. The CMP polishing liquid according to claim 1 , wherein the average diameter of the composite particle is at least 40 nm.

5. The CMP polishing liquid according to claim 1 , wherein the second particle has a diameter of 2 nm to 6 nm and is adhered to the core.

6. The CMP polishing liquid according to claim 1 , wherein the second particle has a diameter of 0.1 to 50 nm.

7. The CMP polishing liquid according to claim 1 , wherein the second particle has a diameter of 0.1 to 20 nm.

8. The CMP polishing liquid according to claim 1 , wherein the second particle has a diameter of 0.1 to 10 nm.

9. The CMP polishing liquid according to claim 1 , wherein the second particle has a diameter of great than or equal to 0.1 nm and less than 10 nm.

10. A method for manufacturing a CMP polishing liquid containing water and an abrasive particle, the method comprising
a step of, in an aqueous solution that contains a first particle containing silica, a first component containing a tetravalent cerium salt precursor of cerium hydroxide, and a second component that is capable of reacting with the precursor to precipitate a second cerium hydroxide particle, precipitating the second particle by reacting the precursor and the second component to obtain a composite particle having a core including the first particle, and the second particle provided on the core, wherein
the abrasive particle comprises the composite particle, and
pH of the CMP polishing liquid is equal to or lower than 9.5.

11. The method for manufacturing a CMP polishing liquid according to claim 10 , wherein the composite particle is obtained by mixing a liquid containing the first particle and the first component with a liquid containing the second component.

12. The method for manufacturing a CMP polishing liquid according to claim 10 , wherein the precursor is a tetravalent cerium salt and the second component is a basic compound.

13. The method for manufacturing a CMP polishing liquid according to claim 10 , the method further comprising a step of dispersing the composite particle in water.

14. The method for manufacturing a CMP polishing liquid according to claim 10 , the method further comprising a step of washing the composite particle.

15. A method for manufacturing a composite particle, comprising
a step of, in an aqueous solution that contains a first particle containing silica, a first component containing a tetravalent cerium salt precursor of cerium hydroxide, and a second component that is capable of reacting with the precursor to precipitate a second cerium hydroxide particle, precipitating the second particle by reacting the precursor and the second component to obtain a composite particle having a core including the first particle, and the second particle provided on the core.

16. The method for manufacturing a composite particle according to claim 15 , wherein the composite particle is obtained by mixing a liquid containing the first particle and the first component with a liquid containing the second component.

17. The method for manufacturing a composite particle according to claim 15 , wherein the precursor is a tetravalent cerium salt and the second component is a basic compound.

Assignees

• Minami Hisataka
• Inoue Keisuke
• KIKKAWA Chisato
• Nomura Yutaka
• Iwano Tomohiro
• Hitachi Chemical Co Ltd

Inventors

• Minami Hisataka
• Inoue Keisuke
• KIKKAWA Chisato
• Nomura Yutaka
• Iwano Tomohiro

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title