Spaced configuration of acousto-optic deflectors for laser beam scanning of a semiconductor substrate

US9442286B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9442286-B2
Application numberUS-201113997646-A
CountryUS
Kind codeB2
Filing dateDec 22, 2011
Priority dateDec 22, 2011
Publication dateSep 13, 2016
Grant dateSep 13, 2016

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A first acousto-optic deflector receives a laser beam. The first acousto-optic deflector diffracts the received laser beam along a first axis. A second acousto-optic deflector receives the diffracted laser beam. The second acousto-optic deflector diffracts the received diffracted laser beam along a second axis.

First claim

Opening claim text (preview).

What is claimed is: 1. A method, comprising: receiving, by a first acousto-optic deflector, a laser beam; diffracting. by the first acousto-optic deflector, the received laser beam along a first axis; receiving, by a second acousto-optic deflector, the diffracted laser beam; diffracting, by the second acousto-optic deflector, the received diffracted laser beam along a second axis, wherein the first acousto-optic deflector and the second acousto-optic deflector are separated by a separation distance in the direction of the diffracted laser beam; and refracting the diffracted laser beam from the second acousto-optic at by magnification optics and directing the diffracted laser beam to a semiconductor substrate to process the semiconductor substrate. 2. The method of claim 1 , wherein: the first acousto-optic deflector is oriented along the first axis; and the second acousto-optic deflector is oriented along the second axis that is perpendicular to the first axis. 3. The method of claim 2 , wherein the refracted laser beam is to generate vias on the substrate or to expose a photo-resist material on the substrate for laser direct imaging to fabricate a circuit. 4. The method of claim 2 , wherein the laser beam is comprised of one or more pulses, the method further comprising: receiving, by the first acousto-optic deflector, a pulse of the laser beam; diffracting, by the first acousto-optic deflector, the received pulse of the laser beam, along the first axis; receiving, by a third acousto-optic deflector that is oriented along the second axis and is separated by the separation distance from the first acousto-optic deflector, the diffracted pulse of the laser beam; and diffracting, by the third acousto-optic deflector, the received diffracted pulse of the laser beam along the second axis that is perpendicular to the first axis. 5. The method of claim 4 , wherein spatial range for laser beams that fall on a substrate to generate vias is greater when both the second and the third acousto-optic deflectors are operational, in comparison to operating the second acousto-optic deflector without operating the third acousto-optic deflector. 6. The method of claim 1 , the method further comprising: adjusting electrical inputs of the first and the second acousto-optic deflectors to change acoustic frequencies within the first and the second acousto-optic deflectors to control an angle of diffraction to deflect the laser beam, while avoiding usage of any mechanical moving component to deflect the laser beam. 7. The method of claim 1 , the method further comprising: generating, the laser beam by a laser resonator; transmitting the laser beam generated by the laser resonator, through an aperture mask between the laser resonator and the first acousto-optic reflector; reflecting the transmitted laser beam from the aperture mask by a mirror to fall on the first acousto-optic deflector; positioning a substrate on a planar surface; and drilling vias on the substrate by the diffracted laser beam of the second acousto-optic deflector. 8. The method of claim 1 , wherein the laser beam received by the first acousto-optic deflector is one of plurality of laser beams transmitted by a beam splitter, the method further comprising: while diffracting the laser beam by the first acousto-optic deflector, simultaneously diffracting the other plurality of laser beams by additional acousto-optic deflectors along the first axis to process the semiconductor substrate at least two locations. 9. The method of claim 1 , wherein the laser beam received by the first acousto-optic deflector is one of plurality of laser beams transmitted by a beam switching device, the method further comprising: after diffracting the laser beam by the first acousto-optic deflector, diffracting the other plurality of laser beams in sequence by additional acousto-optic deflectors along the first axis to process the semiconductor substrate at least two locations. 10. A system, comprising : a first acousto-optic deflector configured to receive a laser beam, and configured to diffract the received laser beam; a second acousto-optic deflector coupled to the first acousto-optic deflector, wherein the second acousto-optic deflector is configured to receive the diffracted laser beam, and diffract the received diffracted laser beam along a second axis, wherein the first acousto-optic deflector and the second acousto-optic deflector are separated by a separation the direction of the diffracted laser beam; magnification optics to refract the diffracted laser beam from the second acousto-optic deflector and to direct the diffracted laser beam to a semiconductor substrate to process the semiconductor substrate. 11. The system of claim 10 , wherein: the first acousto-optic deflector is oriented along the first axis; and the second acousto-optic deflector is oriented along the second axis that is perpendicular to the first axis. 12. The system of claim 11 wherein the refracted laser beam is to generate vias on a substrate or to expose a photo-resist material for laser direct imaging to fabricate a circuit. 13. The system of claim 11 , wherein the laser beam is comprised of one or more pulses, the system further comprising: a third acousto-optic deflector coupled to the second acousto-optic deflector and oriented along the second axis that is perpendicular to the first axis, wherein the third acousto-optic deflector is separated by the separation distance from the first acousto-optic deflector, wherein: the first acousto-optic deflector receives a pulse of the laser beam and diffracts the received pulse of the laser beam along the first axis; and the third acousto-optic deflector is configured to receive the diffracted pulse of the laser beam; and the third acousto-optic deflector is configured to diffract the received diffracted pulse of the laser beam along the second axis that is perpendicular to the first axis. 14. The system of claim 13 , wherein spatial range for laser beams that fall on a substrate to generate vias is greater when both the second and the third acousto-optic deflectors are operational, in comparison to operating the second acousto-optic deflector without operating the third acousto-optic deflector. 15. The system of claim 10 , wherein electrical inputs of the first and the second acousto-optic deflectors are adjusted to change acoustic frequencies within the first and the second acousto-optic deflectors to control an angle of diffraction to deflect the laser beam, while avoiding usage of any mechanical moving component to deflect the laser beam. 16. The system of claim 10 , wherein a laser resonator generates the laser beam, and the laser beam generated by the laser resonator, is transmitted through an aperture mask between the laser resonator and the first acousto-optic deflector, and the transmitted laser beam from the aperture mask is reflected by a mirror to fall on the first acousto-optic deflector, and wherein a substrate is positioned on a planar surface, and vias are drilled on the substrate by the diffracted laser beam of the second acousto-optic deflector. 17. The system of claim 10 , the system further comprising: additional acousto-optic deflectors; and a beam splitter, wherein the laser beam received by the first acousto-optic deflector is one of plurality of laser beams transmitted by the beam splitter, and wherein while diffracting the laser beam by the first acousto-optic deflector, diffracting the other plurality of laser beams by the additional acousto-optic deflectors along th

Assignees

Inventors

Classifications

  • G02B26/10Primary

    Scanning systems · CPC title

  • Operations & Transport · mapped topic

  • series; tandem · CPC title

  • G02F1/33Primary

    Acousto-optical deflection devices {(circuit or control arrangements therefor G02F1/113)} · CPC title

  • Physics · mapped topic

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9442286B2 cover?
A first acousto-optic deflector receives a laser beam. The first acousto-optic deflector diffracts the received laser beam along a first axis. A second acousto-optic deflector receives the diffracted laser beam. The second acousto-optic deflector diffracts the received diffracted laser beam along a second axis.
Who is the assignee on this patent?
Li Yonggang, Salama Islam A, Zhang Chong, and 1 more
What technology area does this patent fall under?
Primary CPC classification G02B26/10. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 13 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).