Sub-wavelength extreme ultraviolet metal transmission grating and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9442230-B2
Application number	US-201314144222-A
Country	US
Kind code	B2
Filing date	Dec 30, 2013
Priority date	Sep 20, 2011
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A method of manufacturing a sub-wavelength extreme ultraviolet metal transmission grating is disclosed. In one aspect, the method comprises forming a silicon nitride self-supporting film window on a back surface of a silicon-based substrate having both surfaces polished, then spin-coating a silicon nitride film on a front surface of the substrate with an electron beam resist HSQ. Then, performing electron beam direct writing exposure on the HSQ, developing and fixing to form a plurality of grating line patterns and a ring pattern surrounding the grating line patterns. Then depositing a chrome material on the front surface of the substrate through magnetron sputtering. Then, removing the chrome material inside the ring pattern. Then, growing a gold material on the front surface of the substrate through atomic layer deposition. Lastly, removing the gold material on the chrome material outside the ring pattern as well as on and between the grating line patterns, thereby only retaining the gold material on sidewalls of the grating line patterns.

First claim

What is claimed is:

1. A method of manufacturing a sub-wavelength extreme ultraviolet metal transmission grating, comprising:
forming a silicon nitride self-supporting film window on a back surface of a silicon-based substrate having both surfaces polished;
spin-coating a silicon nitride film on a front surface of the silicon-based substrate with an electron beam resist (HSQ);
performing electron beam direct writing exposure on the HSQ, and then performing developing and fixing to form a plurality of grating line patterns having a duty cycle of 1:3 and a ring pattern surrounding the grating line patterns;
depositing a chrome material on the front surface of the silicon-based substrate through magnetron sputtering as a light-blocking layer for the grating line patterns and the ring pattern;
removing the chrome material inside the ring pattern so that only the chrome material outside the ring pattern is retained as a absorber of scattering light;
growing a gold material on the front surface of the silicon-based substrate through atomic layer deposition; and
removing the gold material on the chrome material outside the ring pattern, between the grating line patterns, and on the grating line patterns so that only the gold material on sidewalls of the grating line patterns is retained.

2. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 1 , wherein forming the silicon nitride self-supporting film window on the back surface of the silicon-based substrate having both surfaces polished comprises:
growing a silicon nitride film on each of the front surface and the back surface of the silicon-based substrate;
forming a window by etching the silicon nitride film on the front back surface of the silicon-based substrate until the silicon-based substrate is exposed; and
forming the silicon nitride self-supporting film window by anisotropic etching of silicon inside the window from the exposed silicon-based substrate until the silicon nitride film on the front surface of the silicon-based substrate is exposed.

3. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 2 , wherein:
the silicon film is grown through plasma enhanced chemical vapor deposition; and
the silicon nitride film has a thickness of 0.8 μm-1 μm.

4. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 2 , wherein the silicon nitride film is etched by reactive ion etching.

5. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 2 , wherein the silicon inside the window is etched by KOH solution.

6. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 1 , wherein the HSQ has a thickness of 25 nm-40 nm.

7. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 1 , wherein the HSQ changes to a quasi-quartz structure after being subjected to the electron beam direct writing exposure.

8. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 1 , wherein:
the grating line patterns have a period of 80 nm, each grating line pattern having a width of 20 nm, and
the ring pattern has a width of 100 nm.

9. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 1 , wherein the chrome material has a thickness less than or equivalent to that of the HSQ.

10. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 1 , wherein:
the chrome material inside the ring pattern is removed through futon-dolan process; and
removing the chrome material comprises removing the chrome material on and between the grating line patterns.

11. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 1 , wherein the gold material has a thickness equivalent to a width of the grating line pattern.

12. The method of manufacturing the sub-wavelength extreme ultraviolet metal transmission grating according to claim 1 , wherein the chrome material is removed through reactive ion anisotropic etching.

13. A sub-wavelength extreme ultraviolet metal transmission grating, comprising:
a silicon-based substrate;
a silicon nitride self-supporting film window supported by the silicon-based substrate at the edge of the silicon based substrate;
a plurality of grating line patterns having a duty cycle of 1:3 and being configured for phase modulation of incident light and a ring pattern surrounding the plurality of grating line patterns, the plurality of grating line patterns and the ring pattern being arranged on the silicon nitride self-supporting film window;
a gold material for amplitude modulation of the incident light formed on the silicon nitride self-supporting film window and arranged on respective sidewalls of the grating line patterns and the ring pattern; and
a chrome material arranged outside the ring pattern on the silicon nitride self-supporting film window.

14. The sub-wavelength extreme ultraviolet metal transmission grating according to claim 13 , wherein the silicon nitride self-supporting film window is formed by:
growing a silicon nitride film on each of a front surface and a back surface of the silicon-based substrate;
forming a window by etching the silicon nitride film on the back surface of the silicon-based substrate until the silicon-based substrate is exposed;
forming the silicon nitride self-supporting film window by anisotropic etching of silicon inside the window from the exposed silicon based substrate until the silicon nitride film on the front surface of the silicon-based substrate is exposed.

15. The sub-wavelength extreme ultraviolet metal transmission grating according to claim 14 , wherein the silicon nitride has a thickness of 0.8 μm-1 μm.

16. The sub-wavelength extreme ultraviolet metal transmission grating according to claim 13 , wherein the plurality of grating line patterns and the ring pattern surrounding the plurality of grating line patterns are formed by:
spin-coating the silicon nitride film on the front surface of the silicon-based substrate with an electron beam resist HSQ; and
performing electron beam direct writing exposure on the HSQ and then performing developing and fixing.

17. The sub-wavelength extreme ultraviolet metal transmission grating according to claim 16 , wherein:
the HSQ has a thickness of 25 nm-40 nm;
the grating line patterns have a period of 80 nm, each grating line pattern having a width of 20 nm, and
the ring pattern has a width of 100 nm.

18. The sub-wavelength extreme ultraviolet metal transmission grating according to claim 13 , wherein the chrome material has a thickness less than or equivalent to that of the HSQ.

19. The sub-wavelength extreme ultraviolet metal transmission grating according to claim 13 , wherein the gold material has a thickness equivalent to the width of the grating line pattern.

Assignees

• Inst Of Microelectronics Cas

Inventors

• Li Hailiang
• Xie Changqing
• Liu Ming
• Li Dongmei
• Shi Lina
• Zhu Xiaoli

Classifications

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/0757

  Macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence) · CPC title

• G02B5/1809

  with pitch less than or comparable to the wavelength · CPC title

• G02B5/1857

  using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams · CPC title

• G02B2005/1804

  Transmission gratings · CPC title