Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
US9428836B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9428836-B2 |
| Application number | US-201414264994-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 29, 2014 |
| Priority date | Apr 29, 2014 |
| Publication date | Aug 30, 2016 |
| Grant date | Aug 30, 2016 |
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A solution for electroless deposition of cobalt is provided. A reducing agent of Ti 3+ ions is provided to the solution. Co 2+ ions are provided to the solution.
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What is claimed is: 1. A solution for electroless deposition of cobalt, comprising: a complexed reducing agent of Ti 3+ ions; and Co 2+ ions, wherein the solution further comprises amine ligands. 2. The solution, as recited in claim 1 , further comprising at least one of gluconate or tartrate ions or methoxyacetate ions. 3. The solution, as recited in claim 2 , wherein the solution has a pH between 6 and 10, inclusive. 4. The solution, as recited in claim 1 , wherein a continuous cobalt layer of at least 99.9% purity is deposited. 5. The solution, as recited in claim 1 , wherein a ratio of Ti 3+ to Co 2+ ion is between 1:5 and 5:1. 6. The method, as recited in claim 1 , wherein the solution is boron, phosphorus, hydrazine, and formaldehyde free. 7. A method for providing an electroless plating of a cobalt containing layer, comprising: providing a Ti 3+ concentrated stock solution; providing a Co 2+ concentrated stock solution; combining a flow from the Ti 3+ concentrated stock solution with a flow from the Co 2+ concentrated stock solution and water to provide a mixed electrolyte for electrolessly depositing Co; and exposing a substrate to the mixed electrolyte for electrolessly depositing Co; wherein exposing the wafer to the mixed electrolyte for electrolessly depositing Co, comprises: providing a solution temperature between 20° to 25° C., inclusive; and providing a pH of between 6 and 10, inclusive. 8. The method, as recited in claim 7 , wherein the cobalt containing layer is at least 99.9% pure cobalt. 9. The method, as recited in claim 7 , wherein the Ti 3+ concentrated stock solution comprises a solution comprising TiCl 3 . 10. The method, as recited in claim 9 , wherein the Co 2+ concentrated stock solution comprises a solution of CoSO 4 and ammonium hydroxide. 11. The method, as recited in claim 10 , wherein the Co 2+ concentrated stock solution has a shelf life of over a month. 12. The method, as recited in claim 11 , wherein the Ti 3+ concentrated stock solution has a shelf life of over a month. 13. The method, as recited in claim 10 , wherein the mixed electrolyte solution is boron, phosphorus, hydrazine, and formaldehyde free. 14. The method, as recited in claim 7 , wherein the mixed electrolyte solution is boron, phosphorus, hydrazine, and formaldehyde free. 15. A method for providing an electroless plating of a cobalt layer, comprising: providing a solution for electroless deposition of cobalt, comprising: Ti 3+ ions; and Co 2+ ions, wherein a ratio of Ti 3+ ions to Co 2+ ions is between 5:1 and 1:5; and exposing a substrate to the solution for electroless deposition of cobalt, wherein the solution further comprises amine ligands. 16. The method, as recited in claim 15 , wherein the providing the solution, provides the solution at a pH of between 6 and 10, inclusive, and at a temperature between 20° to 25° C., inclusive. 17. The method, as recited in claim 15 , wherein the cobalt layer is at least 99.9% pure cobalt. 18. The method of claim 17 , wherein the solution is boron, phosphorus, hydrazine, and formaldehyde free. 19. The method of claim 15 , wherein the solution is boron, phosphorus, hydrazine, and formaldehyde free. 20. The method as recited in claim 15 , wherein the solution is boron, phosphorus, hydrazine, and formaldehyde free; wherein the cobalt layer is at least 99.9% pure cobalt, and wherein the providing the solution comprises providing the solution at a pH of between 6and 10, inclusive, and at a temperature between 20° to 25° C., inclusive.
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