Method for making high-temperature superconducting film

Patent metadata

Field	Value
Publication number	US-9425375-B2
Application number	US-201414316823-A
Country	US
Kind code	B2
Filing date	Jun 27, 2014
Priority date	Jun 27, 2014
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

A method for making a high-temperature superconducting film includes loading a SrTiO 3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO 3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.

First claim

What is claimed is:

1. A method for making a high-temperature superconducting film, comprising:
(S1) loading a SrTiO 3 substrate into an ultra-high vacuum system;
(S2) growing a single crystalline FeSe layer on a surface of the SrTiO 3 substrate by molecular beam epitaxy; and
(S3) growing a protective layer with a layered crystal structure by molecular beam epitaxy and covering the single crystalline FeSe layer by the protective layer.

2. The method of claim 1 , wherein the protective layer is a single crystalline FeTe layer.

3. The method of claim 2 , wherein the SrTiO 3 substrate is held at a temperature in a range from about 310 degrees Celsius to about 330 degrees Celsius in the process of growing the single crystalline FeTe layer.

4. The method of claim 3 , further comprising coevaporating a Fe source and a Te source in the step (S3), wherein an evaporated temperature of the Fe source is in a range from about 1000 degrees Celsius to about 1100 degrees Celsius, and an evaporated temperature of the Te source is in a range from about 240 degrees Celsius to about 280 degrees Celsius.

5. The method of claim 2 , wherein a thickness of the single crystalline FeTe layer is in a range from about 2 unit-cells to about 10 unit-cells thick, and a thickness of the FeSe single crystalline layer is in a range from about 1 unit-cell to about 5 unit-cells thick.

6. The method of claim 1 , further comprising etching the SrTiO 3 substrate by hydrochloric acid for about 30 minutes to about 60 minutes and annealing in oxygen atmosphere for about 2.5 hours to about 3.5 hours at a temperature from about 950 degrees Celsius to about 1000 degrees Celsius before loading the SrTiO 3 substrate into the ultra-high vacuum system in the step (S1).

7. The method of claim 1 , further comprising degassing the SrTiO 3 substrate at a temperature from about 600 degrees Celsius to about 650 degrees Celsius and keeping the temperature for about 2.5 hours to about 3.5 hours before growing the single crystalline FeSe layer in the step (S2).

8. The method of claim 1 , wherein in the step (S2), the SrTiO 3 substrate is held at a temperature of in a range from about 380 degrees Celsius to about 420 degrees Celsius in the process of growing the single crystalline FeSe layer.

9. The method of claim 1 , further comprising coevaporating a Fe source and a Se source in the step (S2), wherein an evaporated temperature of the Fe source is in a range from about 1000 degrees Celsius to about 1100 degrees Celsius, and an evaporated temperature of the Se source is in a range from about 130 degrees Celsius to about 150 degrees Celsius.

10. The method of claim 1 , wherein in the step (S2), after growing the single crystalline FeSe layer, an entirety comprising the SrTiO 3 substrate and the single crystalline FeSe layer is annealed at a temperature from about 450 degrees Celsius to about 550 degrees Celsius for about 20 hours to about 30 hours.

11. A method for making a high-temperature superconducting film, comprising:
(S1) acid etching a SrTiO 3 substrate by hydrochloric acid for from about 30 minutes to about 60 minutes and annealing for from about 2.5 hours to about 3.5 hours at a temperature from about 950 degrees Celsius to about 1000 degrees Celsius;
(S2) loading the SrTiO 3 substrate in an ultra-high vacuum system;
(S3) growing a single crystalline FeSe layer on a surface of the SrTiO 3 substrate by molecular beam epitaxy; and
(S4) growing a protective layer with a layered crystal structure by molecular beam epitaxy and covering the single crystalline FeSe layer by the protective layer.

12. The method of claim 11 , wherein the protective layer is a single crystalline FeTe layer.

13. The method of claim 12 , wherein the SrTiO 3 substrate is held at a temperature in a range from about 310 degrees Celsius to about 330 degrees Celsius in the process of growing the single crystalline FeTe layer.

14. The method of claim 13 , further comprising coevaporating a Fe source and a Te source in the step (S4), wherein an evaporated temperature of the Fe source is in a range from about 1000 degrees Celsius to about 1100 degrees Celsius, and an evaporated temperature of the Te source is in a range from about 240 degrees Celsius to about 280 degrees Celsius.

15. The method of claim 12 , wherein a thickness of the single crystalline FeTe layer is in a range from about 2 unit-cells to about 10 unit-cells thick, and a thickness of the FeSe single crystalline layer is in a range from about 1 unit-cell to about 5 unit-cells thick.

16. The method of claim 11 , further comprising degassing the SrTiO 3 substrate at a temperature from about 600 degrees Celsius to about 650 degrees Celsius and keeping the temperature for from about 2.5 hours to about 3.5 hours before growing the single crystalline FeSe layer in the step (S3).

17. The method of claim 11 , wherein in the step (S3), the SrTiO 3 substrate is held at a temperature in a range from about 380 degrees Celsius to about 420 degrees Celsius in the process of growing the single crystalline FeSe layer.

18. The method of claim 11 , further comprising coevaporating a Fe source and a Se source in the step (S3), wherein an evaporated temperature of the Fe source is in a range from about 1000 degrees Celsius to about 1100 degrees Celsius, and an evaporated temperature of the Se source is in a range from about 130 degrees Celsius to about 150 degrees Celsius.

19. The method of claim 11 , wherein in the step (S3), after growing the single crystalline FeSe layer, an entirety comprising the SrTiO 3 substrate and the single crystalline FeSe layer is annealed at a temperature from about 450 degrees Celsius to about 550 degrees Celsius for about 20 hours to about 30 hours.

20. A method for making a high-temperature superconducting film, comprising:
(S1) loading a SrTiO 3 substrate in an ultra-high vacuum system;
(S2) growing a single crystalline FeSe layer on a surface of the SrTiO 3 substrate by molecular beam epitaxy; and
(S3) growing a single crystalline FeTe layer by molecular beam epitaxy and covering the single crystalline FeSe layer by the single crystalline FeTe layer.

Assignees

• Univ Tsinghua
• Inst Physics Cas

Inventors

• Xue qi-kun
• Ma Xu-Cun
• Wang Li-Li
• Chen Xi
• Jia jin-feng
• He Ke
• Ji Shuai-Hua
• Zhang wen-hao
• Wang qing-yan
• Li Zhi

Classifications

• H01L39/12

  Electricity · mapped topic

• H01L39/2403 Primary

  Electricity · mapped topic

• H01B13/0036

  Details · CPC title

• H01B12/06

  Films or wires on bases or cores · CPC title

• H10N60/85 Primary

  Superconducting active materials · CPC title