Smart device fabrication via precision patterning

Patent metadata

Field	Value
Publication number	US-9420639-B2
Application number	US-201314077043-A
Country	US
Kind code	B2
Filing date	Nov 11, 2013
Priority date	Nov 11, 2013
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

Embodiments involve smart device fabrication for semiconductor processing tools via precision patterning. In one embodiment, a method of manufacturing a semiconductor processing tool component includes providing a substrate of the semiconductor processing tool component, patterning the substrate to form a sensor directly on the substrate, and depositing a top layer over the sensor. The sensor may include, for example, a temperature or strain sensor. The method can also include patterning the substrate to form one or more of: heaters, thermistors, and electrodes on the substrate. In one embodiment, the method involves patterning a surface of the component oriented towards a plasma region inside of the semiconductor processing tool.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor processing tool component, the method comprising:
providing a substrate of the semiconductor processing tool component;
patterning the substrate to form a sensor directly on the substrate, wherein patterning the substrate comprises using metal or ceramic features, and a precision plasma spray, wherein the precision plasma spray comprises:
supporting the substrate in a precision plasma spray cell;
introducing a powder into a plasma flame within the precision plasma spray cell, melting the powder;
directing the molten powder to impact the substrate in a pattern to form the sensor without significantly increasing temperature of the substrate of the semiconductor processing tool component enabling patterning without deforming the pattern that forming the sensor having a thickness in the range of 0.005 mm to 0.5 mm; and
depositing a top layer over the sensor.

2. The method of claim 1 , wherein patterning the substrate comprises patterning a surface of the component oriented towards a plasma region inside of the semiconductor processing tool and wherein depositing the top layer over the sensor comprises depositing a plasma-resistant layer.

3. The method of claim 1 , wherein depositing the top layer over the sensor comprises depositing a dielectric layer.

4. The method of claim 1 , wherein patterning the substrate to form the sensor directly on the substrate comprises forming a three-dimensional (3D) sensor directly on the substrate.

5. The method of claim 1 , wherein the substrate has a three-dimensional (3D) geometry onto which the sensor is directly formed.

6. The method of claim 1 , wherein the sensor has a width in a range of 0.05 mm to 2 mm.

7. The method of claim 1 , further comprising:
prior to depositing the top layer, patterning the substrate to form a heater directly on the substrate.

8. The method of claim 7 , wherein the heater has a thickness in a range of 0.005 mm to 1 mm.

9. The method of claim 7 , wherein the heater has a width in a range of 1 mm to 25 mm.

10. The method of claim 1 , wherein the semiconductor processing tool component comprises one of a plasma chamber lid, a showerhead, a processing chamber liner, an electrostatic chuck, a gas distribution plate, a nozzle, and a process kit ring.

11. The method of claim 1 , further comprising:
patterning the substrate to form a plurality of devices including one or more of: sensors, heaters, thermistors, or electrodes on the substrate.

12. A method of manufacturing a semiconductor processing tool component, the method comprising:
providing a substrate of the semiconductor processing tool component;
patterning the substrate to form a sensor directly on the substrate and to form a plurality of devices including one or more of heaters, thermistors, or electrodes on the substrate, wherein patterning the substrate comprises using or ceramic features, and a precision plasma spray, wherein the precision plasma spray comprises:
supporting the substrate in a precision plasma spray cell;
introducing a powder into a plasma flame within the precision plasma spray cell, melting the powder;
directing the molten powder to impact the substrate in a pattern to form the sensor without significantly increasing temperature of the substrate of the semiconductor processing tool component enabling patterning without deforming the pattern that forming the sensor having a thickness in the range of 0.005 mm to 0.5 mm; and
depositing a top layer over the sensor.

13. The method of claim 12 , wherein patterning the substrate comprises patterning a surface of the semiconductor processing tool component oriented towards a plasma region, and wherein depositing the top layer over the sensor comprises depositing a plasma-resistant layer.

14. The method of claim 12 , wherein depositing the top layer over the sensor comprises depositing a dielectric layer.

15. The method of claim 12 , wherein patterning the substrate comprises patterning the substrate to form one or more of: a temperature sensor or a sensor on the substrate.

Assignees

• Applied Materials Inc

Inventors

• Sun Jennifer
• Chen Yikai
• Kanungo Biraja
• Firouzdor Vahid

Classifications

• H10P72/0421

  for drying etching · CPC title

• C23C4/01

  Selective coating, e.g. pattern coating, without pre-treatment of the material to be coated · CPC title

• H05B3/265

  the insulating base being an inorganic material, e.g. ceramic (H05B3/262 takes precedence) · CPC title

• H05B2203/013

  Heaters using resistive films or coatings · CPC title

• H05B1/0233 Primary

  for semiconductors manufacturing · CPC title