Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
US9419035B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9419035-B2 |
| Application number | US-201213344312-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 5, 2012 |
| Priority date | Feb 11, 2008 |
| Publication date | Aug 16, 2016 |
| Grant date | Aug 16, 2016 |
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An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same.
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What is claimed is: 1. An image sensor, comprising: a first micro-lens positioned on a first color filter that is optically coupled to a first light-sensitive element, the first micro-lens having a first curvature and a first height; a second micro-lens positioned on a second color filter that is optically coupled to a second light-sensitive element, the second micro-lens having a second curvature and a second height; and a third micro-lens positioned on a third color filter that is optically coupled to a third light-sensitive element, the third micro-lens having a third curvature and a third height; wherein the first micro-lens, the second micro-lens, and the third micro-lens are made of a single layer of the same material, wherein the first curvature is the same as both the second curvature and the third curvature, wherein the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths in the first, second, and third light-sensitive elements are the same, and wherein the first, second, and third color filters have the same thickness, and wherein the first color filter is disposed on the first light-sensitive element, the second color filter is disposed on the second light-sensitive element, and the third color filter is disposed on the third light-sensitive element. 2. The image sensor of claim 1 , wherein the first color filter is red, the second color filter is green, and the third color filter is blue. 3. The image sensor of claim 1 , wherein the each of the first, second, and third micro-lenses comprise photoresist, and wherein the first height corresponds to a first transmissiveness at a first location of a gray scale mask; the second height corresponds to a second transmissiveness at a second location of the gray scale mask; and the third height corresponds to a third transmissiveness at a third location of the gray scale mask, wherein the first transmissiveness, the second transmissiveness, and the third transmissiveness are different from each other. 4. The image sensor of claim 3 , wherein the first, the second, and the third micro-lenses are patterned by the gray scale mask in a single exposure. 5. A backside-illuminated image sensor comprising: a substrate having a front side and a back side, the front side having formed therein a first light-sensitive element, a second light-sensitive element, and a third light-sensitive element; first, second, and third color filters formed on the back side of the substrate so that the first color filter is optically coupled to the first light-sensitive element, the second color filter is optically coupled to the second light-sensitive element, and the third color filter is optically coupled to the third light-sensitive element; and first, second, and third micro-lenses positioned on the first, second, and third color filters, wherein the first micro-lens has a first curvature and a first height, the second micro-lens has a second curvature and a second height, and the third micro-lens has a third curvature and a third height and wherein the first micro-lens, the second micro-lens, and the third micro-lens are made of a single layer of the same material; wherein the first curvature is the same as both the second curvature and the third curvature, wherein the first, second, and third color filters have the same thickness, and wherein the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths in the first, second, and third light-sensitive element are the same. 6. The image sensor of claim 5 , further comprising a planarizing layer formed between the back side of the substrate and the first, second, and third color filters. 7. The image sensor of claim 5 wherein the first color filter is red, the second color filter is green, and the third color filter is blue. 8. The image sensor of claim 5 wherein the first, second, and third micro-lenses are patterned by the gray scale mask in a single exposure. 9. An image sensor comprising: a first micro-lens positioned on a first color filter that is optically coupled to a first light-sensitive element, the first micro-lens having a first curvature and a first height; a second micro-lens positioned on a second color filter that is optically coupled to a second light-sensitive element, the second microlens having a second curvature and a second height; and a third micro-lens positioned on a third color filter that is optically coupled to a third light-sensitive element, the third micro-lens having a third curvature and a third height; wherein the first micro-lens, the second micro-lens, and the third micro-lens are made of a single layer of the same material; wherein the first curvature is the same as both the second curvature and the third curvature, wherein the first height is greater than the second height and the second height is greater than the third height, and wherein the first, second, and third color filters have the same thickness; wherein the first color filter is disposed on the first light-sensitive element, the second color filter is disposed on the second light-sensitive element, and the third color filter is disposed on the third light-sensitive element; wherein the first, second, and third light sensitive elements each include epitaxial silicon; wherein the first light sensitive element is configured to receive blue light along a first light path having a first distance within the first light sensitive element, the second light sensitive element is configured to receive green light along a second light path having a second distance within the second light sensitive element, and the third light sensitive element is configured to receive red light along a third light path having a third distance within the third light sensitive element, wherein the third distance is greater than the second distance, and wherein the second distance is greater than the first distance; and wherein substantially all of the received blue light is completely absorbed in the first distance, substantially all of the received green light is completely absorbed in the second distance, and substantially all of the received red light is completely absorbed in the third distance.
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