Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain

Patent metadata

Field	Value
Publication number	US-9806217-B2
Application number	US-201514701273-A
Country	US
Kind code	B2
Filing date	Apr 30, 2015
Priority date	Apr 30, 2014
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.

First claim

What is claimed is:

1. A metal-semiconductor-metal photodetecting device, comprising:
a p-type silicon substrate;
an oxide layer disposed on the p-type silicon substrate;
Schottky junctions disposed adjacent to the oxide layer on the p-type silicon substrate; and
a plasmonic grating disposed on the oxide layer,
wherein the plasmonic grating provides wavelength range selectability for the photodetecting device,
wherein the plasmonic grating comprises:
a film, and
a plurality of perforations through the film.

2. The device of claim 1 , wherein the oxide layer is ˜50 nm thick.

3. The device of claim 1 , wherein the plasmonic grating is ˜50 nm thick.

4. The device of claim 1 , wherein the Schottky junctions are formed using photolithography.

5. The device of claim 1 , wherein the Schottky junctions are comprised of Aluminum.

6. The device of claim 1 , wherein the plasmonic grating is formed by e-beam lithography.

7. The device of claim 1 , wherein the plasmonic grating is comprised of Aluminum.

8. The device of claim 1 , wherein a full width half maximum (FWHM) of a responsivity of the photodetecting device is less than 120 nm.

9. The device of claim 1 , wherein the plasmonic grating is comprised of Aluminum.

10. The device of claim 1 , wherein the device has a responsivity of at least 7.67 A/W.

11. The device of claim 1 , wherein the plasmonic grating provides photocurrent enhancement.

Assignees

• Univ Rice William M

Inventors

• Zheng Bob Yi
• Wang Yumin
• Halas Nancy J
• Nordlander Peter

Classifications

• H01L31/1085 Primary

  Electricity · mapped topic

• H01L31/18

  Electricity · mapped topic

• H01L31/02327

  Electricity · mapped topic

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title