Semiconductor device and method of forming a shielding layer over a semiconductor die disposed in a cavity of an interconnect structure and grounded through the die TSV

Patent metadata

Field	Value
Publication number	US-9401347-B2
Application number	US-201514600825-A
Country	US
Kind code	B2
Filing date	Jan 20, 2015
Priority date	Oct 23, 2009
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die.

First claim

What is claimed:

1. A method of making a semiconductor device, comprising:
providing a substrate including a cavity;
disposing a first semiconductor die or component in the cavity of the substrate;
disposing a planar shielding layer over the first semiconductor die or component and electrically connected to the substrate;
forming a first opening in the planar shielding layer including a first slot extending along a length of the planar shielding layer;
disposing a second semiconductor die or component over the planar shielding layer and electrically connected to the substrate; and
dispensing an encapsulant into the cavity over the first semiconductor die or component through the first slot.

2. The method of claim 1 , wherein a surface of the first semiconductor die or component is substantially co-planar with a surface of the substrate.

3. The method of claim 1 , further including forming a conductive via through the first semiconductor die or component.

4. The method of claim 1 , wherein the first opening is outside of a footprint of the first semiconductor die or component.

5. The method of claim 1 , further including forming a second opening in the planar shielding layer including a second slot extending along the length of the planar shielding layer opposite the first slot.

6. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first semiconductor die or component in a cavity of the substrate;
disposing a planar shielding layer over the first semiconductor die or component;
forming a first slot in the planar shielding layer extending along a length of the planar shielding layer, wherein the first slot is outside of a footprint of the first semiconductor die or component; and
disposing a second semiconductor die or component over the planar shielding layer.

7. The method of claim 6 , wherein a surface of the first semiconductor die or component is substantially co-planar with a surface of the substrate.

8. The method of claim 6 , further including forming a conductive via through the first semiconductor die or component.

9. The method of claim 6 , further including dispensing an encapsulant into the cavity over the first semiconductor die or component through the first slot.

10. The method of claim 6 , wherein the first slot is outside of a footprint of the first semiconductor die or component.

11. The method of claim 6 , further including forming a second slot in the planar shielding layer extending along the length of the planar shielding layer opposite the first slot.

12. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first semiconductor die or component in a cavity of the substrate;
disposing a planar shielding layer over the first semiconductor die or component and including a length of the planar shielding layer less than a length of the substrate; and
dispensing an encapsulant into the cavity over the first semiconductor die or component through a first opening in the planar shielding layer.

13. The method of claim 12 , further including disposing a second semiconductor die or component over the planar shielding layer.

14. The method of claim 12 , further including forming a conductive via through the first semiconductor die or component.

15. The method of claim 12 , wherein a surface of the first semiconductor die or component is substantially co-planar with a surface of the substrate.

16. The method of claim 12 , wherein the first opening in the shielding layer includes a first slot extending along the length of the planar shielding layer.

17. The method of claim 16 , further including forming a second opening in the planar shielding layer including a second slot extending along the length of the planar shielding layer opposite the first slot.

18. The method of claim 12 , wherein the first opening is outside of a footprint of the first semiconductor die or component.

19. A semiconductor device, comprising:
a substrate;
a first semiconductor die or component disposed in a cavity of the substrate;
a shielding layer disposed over the first semiconductor die or component, the shielding layer including a first opening;
a second semiconductor die or component disposed over the shielding layer; and
an encapsulant disposed in the cavity over the first semiconductor die or component and in the first opening.

20. The semiconductor device of claim 19 , wherein a surface of the first semiconductor die or component is substantially co-planar with a surface of the substrate.

21. The semiconductor device of claim 19 , further including a conductive via formed through the first semiconductor die or component.

22. The semiconductor device of claim 19 , wherein the first opening is outside of a footprint of the first semiconductor die or component.

23. The semiconductor device of claim 19 , wherein the first opening in the shielding layer includes a first slot extending along a length of the shielding layer.

24. The semiconductor device of claim 19 , further including a second opening in the shielding layer comprising a second slot extending along the length of the shielding layer opposite the first slot.

Assignees

• Stats Chippac Ltd
• Stats Chippac Pte Ltd

Inventors

• Lee Sinjae
• Kim Jingwan
• Oh Jihoon
• Lim Jaehyun
• Lee Kyuwon

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/22

  the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL · CPC title