Polishing composition for edge roll-off improvement

Patent metadata

Field	Value
Publication number	US-9401104-B2
Application number	US-201414269622-A
Country	US
Kind code	B2
Filing date	May 5, 2014
Priority date	May 5, 2014
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising wet-process silica particles, (b) a water-soluble polymer, (c) an oxidizing agent, (d) a chelating agent, (e) a pH-adjusting agent, and (f) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 7. The invention also provides a method of polishing a substrate, especially a nickel-phosphorus substrate, with the polishing composition.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition comprising:
(a) an abrasive comprising wet-process silica particles,
(b) a water-soluble polymer selected from the group consisting of a polyethylene glycol homopolymer and a polyethylene glycol (PEG) and polypropylene glycol (PPG) block copolymer.
(c) an oxidizing agent,
(d) a cheating agent,
(e) a pH-adjusting agent, and
(f) an aqueous carrier,
wherein the pH of the polishing composition is about 1 to about 7;
wherein the abrasive further comprises alpha particles having an average particle size of about 100 nm to about 1000 nm;
wherein the water-soluble polymer is present in the polishing composition at a concentration of about 0.0001 wt % to about 1 wt %.

2. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process silica particles have an average particle size of about 1 nm to about 1000nm.

3. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process silica particles have an average particle size of about 4 nm to about 300nm.

4. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process silica particles have an average particle size of about 20 nm to about 100nm.

5. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process silica particles are present in the polishing composition at a concentration of about 1 wt. % to about 10 wt. %.

6. The chemical-mechanical polishing composition of claim 5 , wherein the wet-process silica particles are present in the polishing composition at a concentration of about 2 wt. % to about 5 wt. %.

7. The chemical-mechanical polishing composition of claim 1 , wherein the alpha alumina particles have an average particle size of about 100 nm to about 500 nm.

8. The chemical-mechanical polishing composition of claim 1 , wherein the alpha alumina particles have an average particle size of about 200 nm to about 400 nm.

9. The chemical-mechanical polishing composition of claim 1 , wherein the alpha alumina particles are present in the polishing composition at a concentration of about 0.3 wt. % to about 2 wt. %.

10. The chemical-mechanical polishing composition of claim 9 , wherein the alpha alumina particles are present in the polishing composition at a concentration of about 0.5wt. % to about 1 wt. %.

11. The chemical-mechanical polishing composition of claim 1 , wherein the abrasive further comprises fumed alumina particles.

12. The chemical-mechanical polishing composition of claim 11 , wherein the fumed alumina particles are present in the polishing composition at a concentration of about 0.005wt. % to about 1 wt. %.

13. The chemical-mechanical polishing composition of claim 11 , wherein the fumed alumina particles are present in the polishing composition at a concentration of about 0.05 wt. % to about 0.25 wt. %.

14. The chemical-mechanical polishing composition of claim 1 , wherein the water-soluble polymer is a polyethylene glycol (PEG) and polypropylene glycol (PPG) block copolymer.

15. The chemical-mechanical polishing composition of claim 1 , wherein the water-soluble polymer is a polyethylene glycol homopolymer.

16. The chemical-mechanical polishing composition of claim 15 , wherein the polyethylene glycol homopolymer has a molecular weight of about 300 g/mol to about 50,000 g/mol.

17. The chemical-mechanical polishing composition of claim 15 , wherein the polyethylene glycol homopolymer has a molecular weight of about 300 g/mol to about 3500 g/mol.

18. The chemical-mechanical polishing composition of claim 15 , wherein the polyethylene glycol homopolymer has a molecular weight of about 1000 g/mol.

19. The chemical-mechanical polishing composition of claim 15 , wherein the polyethylene glycol homopolymer has a molecular weight of about 2000 g/mol.

20. The chemical-mechanical polishing composition of claim 1 , wherein the water-soluble polymer is present in the polishing composition at a concentration of about 0.01 wt. % to about 0.5 wt. %.

21. The chemical-mechanical polishing composition of claim 1 , wherein the water-soluble polymer is present in the polishing composition at a concentration of about 0.1 wt. % to about 0.2 wt. %.

22. The chemical-mechanical polishing composition of claim 1 , wherein the water-soluble polymer has a hydrophilic-lipophilic balance (HLB) of about 4 or more.

23. The chemical-mechanical polishing composition of claim 22 , wherein the water-soluble polymer has an HLB of about 10 or more.

24. The chemical-mechanical polishing composition of claim 1 , wherein the oxidizing agent comprises hydrogen peroxide.

25. The chemical-mechanical polishing composition of claim 1 , wherein the oxidizing agent is present in the polishing composition at a concentration of about 0.1 wt. % to about 5wt. %.

26. The chemical-mechanical polishing composition of any 1 , wherein the chelating agent comprises an amino acid or an organic carboxylic acid.

27. The chemical-mechanical polishing composition of claims 1 , wherein the chelating agent is tartaric acid, glycine, or malonic acid.

28. The chemical-mechanical polishing composition of claim 1 , wherein the chelating agent is present in the polishing composition at a concentration of about 0.005 wt. % to about 1 wt. %.

29. The chemical-mechanical polishing composition of claim 28 , wherein the chelating agent is present in the polishing composition at a concentration of about 0.5 wt. % to about 1wt. %.

30. The chemical-mechanical polishing composition of claim 1 , wherein the pH of the polishing composition is about 1.5 to about 3.

31. A method of polishing a substrate comprising:
(i) providing a substrate;
(ii) providing a polishing pad;
(iii) providing the chemical-mechanical polishing composition of claim 1 ;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

32. A method of polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises a nickel phosphorus layer;
(ii) providing a polishing pad;
(iii) providing the chemical-mechanical polishing composition of claim 1 ;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the nickel phosphorus layer on a surface of the substrate to polish the substrate.

33. The method of claim 32 , wherein the substrate is a nickel-phosphorus coated aluminum memory disk.

Assignees

• Cabot Microelectronics Corp

Inventors

• Lau Hon Wu
• White Michael

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• C09G1/04 Primary

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title

• G09G1/02 Primary

  Storage circuits (G09G1/06 - G09G1/28 take precedence) · CPC title

• H01L21/3212

  Electricity · mapped topic