Semiconductor die singulation method
US-2015228494-A1 · Aug 13, 2015 · US
US2015357241A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015357241-A1 |
| Application number | US-201514612994-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 3, 2015 |
| Priority date | Jun 4, 2014 |
| Publication date | Dec 10, 2015 |
| Grant date | — |
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In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer.
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We claim: 1 . A method for processing semiconductor die comprising: providing a semiconductor wafer having a plurality of semiconductor die formed on the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces; placing the semiconductor wafer onto a first carrier substrate; singulating the semiconductor wafer through the spaces to form singulation lines adjacent the plurality of semiconductor d…
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