Method of reducing residual contamination in singulated semiconductor die

US2015357241A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2015357241-A1
Application numberUS-201514612994-A
CountryUS
Kind codeA1
Filing dateFeb 3, 2015
Priority dateJun 4, 2014
Publication dateDec 10, 2015
Grant date

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  5. First independent claim

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Abstract

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In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer.

First claim

Opening claim text (preview).

We claim: 1 . A method for processing semiconductor die comprising: providing a semiconductor wafer having a plurality of semiconductor die formed on the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces; placing the semiconductor wafer onto a first carrier substrate; singulating the semiconductor wafer through the spaces to form singulation lines adjacent the plurality of semiconductor d…

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What does patent US2015357241A1 cover?
In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer.
Who is the assignee on this patent?
Semiconductor Components Ind
What technology area does this patent fall under?
Primary CPC classification H10P70/30. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Dec 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).