Method for forming projections and depressions, sealing structure, and light-emitting device

Patent metadata

Field	Value
Publication number	US-9394614-B2
Application number	US-201414254066-A
Country	US
Kind code	B2
Filing date	Apr 16, 2014
Priority date	Apr 19, 2013
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included.

First claim

What is claimed is:

1. A method for forming projections and depressions, comprising:
forming a film over a surface, the film containing a first metal and a second metal whose etching rate is lower than an etching rate of the first metal;
heating the film so that the second metal segregates;
selectively etching the first metal after heating the film; and
selectively etching the surface using a residue containing the second metal as a mask,
wherein the film contains aluminum as the first metal and nickel as the second metal.

2. The method for forming projections and depressions, according to claim 1 ,
wherein a gas containing chlorine is used for etching the first metal.

3. The method for forming projections and depressions, according to claim 1 ,
wherein a gas containing chlorine is used for etching the surface.

4. A method for forming a device, comprising:
forming a film over a substrate, the film containing a first metal and a second metal whose etching rate is lower than an etching rate of the first metal;
heating the film so that the second metal segregates;
selectively etching the first metal after heating the film;
selectively etching a surface of the substrate using a residue containing the second metal as a mask, and
forming a sealant over the substrate after etching the surface of the substrate.

5. The method for forming projections and depressions, according to claim 4 ,
wherein a gas containing chlorine is used for etching the first metal.

6. The method for forming projections and depressions, according to claim 4 ,
wherein a gas containing chlorine is used for etching the surface.

7. A method for forming a device, comprising:
forming a film over a first substrate, the film containing a first metal and a second metal whose etching rate is lower than an etching rate of the first metal;
heating the film so that the second metal segregates;
selectively etching the first metal after heating the film;
selectively etching a surface of the first substrate using a residue containing the second metal as a mask so as to form projections and depressions;
forming a sealant on and in contact with the first substrate after etching the surface of the substrate; and
sealing a space surrounded by the first substrate, the sealant, and a second substrate.

8. The method for forming projections and depressions, according to claim 7 ,
wherein a gas containing chlorine is used for etching the first metal.

9. The method for forming projections and depressions, according to claim 7 ,
wherein a gas containing chlorine is used for etching the surface.

10. The method for forming projections and depressions, according to claim 7 ,
wherein the film contains aluminum as the first metal and nickel as the second metal.

Assignees

• Semiconductor Energy Lab

Inventors

• Nishido Yusuke

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• C23F1/02 Primary

  Local etching · CPC title

• Y10T428/24355

  Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] · CPC title

• C23F1/44

  Compositions for etching metallic material from a metallic material substrate of different composition · CPC title