Low α-dose tin or tin alloy, and method for producing same

US9394590B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9394590-B2
Application numberUS-201113634946-A
CountryUS
Kind codeB2
Filing dateFeb 14, 2011
Priority dateMar 16, 2010
Publication dateJul 19, 2016
Grant dateJul 19, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Disclosed is tin characterized in that a sample of the tin after melting and casting has an α dose of less than 0.0005 cph/cm 2 . Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of α rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower α rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of α rays in tin and tin alloys, and to obtain high-purity tin, in which the α dose has been reduced, suitable for the required materials, as well as a method for producing the same.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing a low α-dose tin, characterized in that a raw material tin having a purity level of 3N, containing lead isotope 210 Pb in an amount of 30 Bq/kg or less, and having a proportion of 206 Pb relative to 208 Pb, 207 Pb, 206 Pb and 204 Pb of less than 25% is subjected to leaching with an aqueous solution of hydrochloric acid or sulfuric acid, then electrolytic refining is performed using a leachate produced in the leaching as an electrolytic solution, which is controlled to have a pH of 1.0 or less and a content of tin electrolyte of 30 to 180 g/L, and then an electrolytically refined tin obtained by the electrolytic refining is melted and cast to obtain an ingot of the low α-dose tin giving an α-dose of less than 0.0005 cph/cm 2 after the melting and casting. 2. The method for producing a low α-dose tin according to claim 1 , characterized in that the α-dose of the ingot of the low α-dose tin is less than 0.0003 cph/cm 2 . 3. The method for producing a low α-dose tin according to claim 2 , characterized in that the α-dose of the ingot of the low α-dose tin measured at an elapsed time of one week, three weeks, one month, two months, six months, or thirty months after the melting and casting is less than 0.0005 cph/cm 2 . 4. The method for producing low α-dose tin according to claim 2 , characterized in that the α-dose of the ingot of the low α-dose tin measured at an elapsed time of one week, three weeks, one month, two months, six months, or thirty months after the melting and casting is less than 0.0003 cph/cm 2 . 5. The method for producing low α-dose tin according to claim 1 , characterized in that the α-dose of the ingot of the low α-dose tin measured at an elapsed time of one week, three weeks, one month, two months, six months, or thirty months after the melting and casting is less than 0.0005 cph/cm 2 . 6. The method for producing low α-dose tin according to claim 1 , characterized in that the α-dose of the ingot of the low α-dose tin measured at an elapsed time of one week, three weeks, one month, two months, six months, or thirty months after the melting and casting is less than 0.0003 cph/cm 2 . 7. A method for producing a low α-dose tin alloy, characterized in that a raw material tin having a purity level of 3N and containing lead isotope 210 Pb in an amount of 30 Bq/kg or less is subjected to leaching with an aqueous solution of hydrochloric acid or sulfuric acid, then electrolytic refining is performed using a leachate produced in the leaching as an electrolytic solution, which is controlled to have a pH of 1.0 or less and a content of tin electrolyte of 30 to 180 g/L, and then an electrolytically refined tin obtained by the electrolytic refining is mixed with a highly-purified metal and a resultant mixture is alloyed by melting and cast to obtain an ingot of the low α-dose tin alloy giving an α-dose of less than 0.0005 cph/cm 2 after the melting and casting, and wherein the low α-dose tin alloy gives an α-dose such that the α-dose measured at a given elapsed time after the melting and casting and that measured at an elapsed time of five months after the time of the preceding measurement have a difference of 0.0001 cph/cm 2 . 8. The method according to claim 7 , wherein the highly purified metal is one or more metals selected from the group consisting of silver, copper and zinc. 9. A method for producing a low α-dose tin alloy, characterized in that a raw material tin that has a purity level of 3N that contains lead isotope 210 Pb in an amount of 30 Bq/kg or less, and that has a proportion of 206 Pb relative to 208 Pb, 207 Pb, 206 Pb and 204 Pb of less than 25%, is subjected to leaching with an aqueous solution of hydrochloric acid or sulfuric acid, then electrolytic is refining is performed using a leachate produced in the leaching as an electrolytic solution which is controlled to have a pH of 1.0 or less and a content of tin electrolyte of 30 to 180 g/L, and then an electrolytically refined tin obtained by the electrolytic refining is mixed with a highly-purified metal and a resultant mixture is alloyed by melting and cast to obtain an ingot of the low α-dose tin alloy giving an α-dose of less than 0.0005 cph/cm 2 after the melting and casting.

Assignees

Inventors

Classifications

  • Selection of non-metallic compositions, e.g. coatings or fluxes (B23K35/34 takes precedence); Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest · CPC title

  • Making wire or rods for soldering or welding · CPC title

  • C22C13/00Primary

    Alloys based on tin · CPC title

  • Sn as the principal constituent · CPC title

  • Operations & Transport · mapped topic

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What does patent US9394590B2 cover?
Disclosed is tin characterized in that a sample of the tin after melting and casting has an α dose of less than 0.0005 cph/cm 2 . Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of α rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high …
Who is the assignee on this patent?
Kanou Gaku, Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification C22C13/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jul 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).