Cleaning solution composition and method of cleaning semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-9394509-B2
Application number	US-201414542973-A
Country	US
Kind code	B2
Filing date	Nov 17, 2014
Priority date	Apr 16, 2014
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF 2 − ), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.

First claim

What is claimed is:

1. A cleaning solution composition, comprising:
an organic solvent in which a metal fluoride does not dissolve;
at least one fluoride compound that generates bifluoride (HF 2 − ); and
deionized water,
wherein the deionized water is present in a concentration of 1.5 wt % or less based on the total weight of the cleaning solution composition,
wherein the at least one fluoride compound includes hydrogen fluoride (HF) and ammonium fluoride (NH 4 F), and
wherein the concentration of HF is in a range of 0.002 wt % to 0.01 wt % based on the total weight of the cleaning solution composition and the concentration of NH 4 F is in a range of 0.02 wt % to 0.05 wt % based on the total weight of the cleaning solution composition.

2. The cleaning solution composition according to claim 1 , wherein the organic solvent includes at least one of methyl alcohol, ethyl alcohol, propyl alcohol, or butyl alcohol.

3. The cleaning solution composition according to claim 1 , wherein the organic solvent includes isopropyl alcohol ((CH 3 ) 2 CHOH).

4. The cleaning solution composition according to claim 1 , wherein the concentration of the organic solvent is in a range of 98.7 wt % to 99.6 wt % based on the total weight of the cleaning solution composition.

5. The cleaning solution composition according to claim 1 , wherein the at least one fluoride compound further includes ammonium hydrogen fluoride (NH 4 HF 2 ).

6. The cleaning solution composition according to claim 1 , wherein the concentration of the deionized water is in a range of 0.4 wt % to 1.25 wt % based on the total weight of the cleaning solution composition.

7. A method of cleaning a semiconductor device, comprising:
forming a pattern including a metal layer on a substrate; and
cleaning the substrate using a cleaning solution composition including an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF 2 − ), and deionized water, the deionized water being present in a concentration of 1.5 wt % or less based on the total weight of the cleaning solution composition,
wherein the at least one fluoride compound includes hydrogen fluoride (HF) and ammonium fluoride (NH 4 F), and
wherein the concentration of HF is in a range of 0.002 wt % to 0.01 wt % based on the total weight of the cleaning solution composition and the concentration of NH 4 F is in a range of 0.02 wt % to 0.05 wt % based on the total weight of the cleaning solution composition.

8. The method according to claim 7 , wherein the organic solvent includes isopropyl alcohol ((CH 3 ) 2 CHOH).

9. The method according to claim 7 , wherein the at least one fluoride compound further includes ammonium hydrogen fluoride (NH 4 HF 2 ).

10. The method according to claim 7 , wherein the cleaning solution composition includes 98.7 wt % to 99.6 wt % of isopropyl alcohol ((CH 3 ) 2 CHOH) based on the total weight of the cleaning solution composition, and 0.4 wt % to 1.25 wt % of deionized water based on the total weight of the cleaning solution composition.

11. The method according to claim 7 , further comprising:
removing the cleaning solution composition from the substrate by rinsing the substrate with a deionized water composition after cleaning the substrate.

12. A cleaning solution composition, comprising:
an organic solvent in which a metal fluoride does not dissolve, the organic solvent present in a concentration in a range of 98.7 wt % to 99.6 wt % based on the total weight of the cleaning solution composition;
hydrogen fluoride (HF) present in a concentration in a range of 0.002 wt % to 0.01 wt % based on the total weight of the cleaning solution composition;
ammonium fluoride (NH 4 F) present in a concentration in a range of 0.02 wt % to 0.05 wt % based on the total weight of the cleaning solution composition; and
deionized water
present in a concentration in a range of 0.4 wt % to 1.25 wt % based on the total weight of the cleaning solution composition.

13. The cleaning solution composition according to claim 12 , wherein the organic solvent includes at least one of methyl alcohol, ethyl alcohol, propyl alcohol, or butyl alcohol.

14. The cleaning solution composition according to claim 12 , wherein the organic solvent includes isopropyl alcohol ((CH 3 ) 2 CHOH).

15. The method according to claim 7 , wherein cleaning the substrate is performed at a temperature in a range of 10° C. to 30° C.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Bae Sang-Won
• Ko Yong-Sun
• Kim Seok-Hoon
• Kim In-Gi
• Oh Jung-Min
• Lee Kun-Tack
• Lee Hyo-San
• Jeong Ji-Hoon
• Cho Yong-Jhin

Classifications

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• C11D7/08

  Acids · CPC title

• H01L21/02068

  Electricity · mapped topic