Semiconductor device and manufacturing method thereof
US-2024404870-A1 · Dec 5, 2024 · US
Polishing composition
US9390938B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9390938-B2 |
| Application number | US-201615018327-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2016 |
| Priority date | Sep 6, 2012 |
| Publication date | Jul 12, 2016 |
| Grant date | Jul 12, 2016 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
To provide a means by which polishing rate can further be improved in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element. Oxo acid containing a metal element or a semimetal element, and water are contained in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element.
First claim
Opening claim text (preview).
The invention claimed is: 1. A polishing method, comprising a step of polishing an object to be polished comprising a metal element or a semimetal element with a polishing composition comprising: an oxo acid comprising a metal element or a semimetal element; and water, wherein the oxo acid and the object to be polished comprise the same metal element or semimetal element. 2. A method for producing a substrate, comprising a step of polishing an object to be polished comprising the metal element or a semimetal element by the polishing method set forth in claim 1 . 3. The polishing method according to claim 1 , wherein the object to be polished comprises a phase change alloy, and the oxo acid comprises a semimetal element. 4. The polishing method according to claim 3 , wherein the phase change alloy is a germanium-antimony-tellurium alloy. 5. The polishing method according to claim 1 , wherein the oxo acid in the polishing composition comprises tellurium as the semimetal element. 6. The polishing method according to claim 1 , wherein the object to be polished comprises a metal layer comprising the metal element. 7. The polishing method according to claim 6 , wherein the metal layer comprises tungsten. 8. The polishing method according to claim 1 , wherein the polishing composition further comprises a non-metallic oxidizing agent. 9. The polishing method according to claim 1 , wherein the polishing composition further comprises a polishing accelerator.
Assignees
Inventors
Classifications
of semiconductor materials · CPC title
- H10P52/403Primary
of conductive or resistive materials · CPC title
Acidic compositions (C23F1/42 takes precedence) · CPC title
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
Heavy metals · CPC title
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Frequently asked questions
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- What does patent US9390938B2 cover?
- To provide a means by which polishing rate can further be improved in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element. Oxo acid containing a metal element or a semimetal element, and water are contained in a polishing composition to be used for an application of polishing an object to be polished conta…
- Who is the assignee on this patent?
- Fujimi Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P52/403. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 12 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).