Defect control and stability of dc bias in rf plasma-based substrate processing systems using molecular reactive purge gas
US-2015354061-A1 · Dec 10, 2015 · US
US9385015B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9385015-B2 |
| Application number | US-70077110-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 5, 2010 |
| Priority date | Feb 9, 2009 |
| Publication date | Jul 5, 2016 |
| Grant date | Jul 5, 2016 |
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A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.
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What is claimed is: 1. A method for preventing particle adhesion to a target substrate in a chamber, the chamber comprising a chamber main body which is switchable between a depressurized environment and an atmospheric pressure environment, an ionization unit configured to generate an ionized gas to be supplied into the chamber main body, and a gas exhaust unit configured to exhaust the chamber main body, the method comprising: accommodating the target substrate into the chamber main body; performing a first step in which an inner pressure of the chamber main body is increased to a first pressure less than a pressure of the atmospheric pressure environment by supplying the ionized gas into the chamber main body without exhausting the chamber main body; performing a second step in which the inner pressure is decreased to a second pressure by exhausting the chamber main body while supplying the ionized gas thereinto; and performing a third step in which the inner pressure is increased to a third pressure by supplying the ionized gas into the chamber main body while stopping exhausting the chamber main body, wherein the second and third steps are both sequentially repeated a plurality of times until an environment of the chamber main body reaches the pressure of the atmospheric pressure environment, wherein the third pressure is higher than the first pressure and lower than a pressure of the atmospheric pressure environment, and the second pressure is lower than the first pressure, and wherein, for each sequential repetition of the second and third steps, the second and the third pressures of a subsequent repetition are higher than the second and third pressures, respectively, of a prior repetition of the second and third steps. 2. The method of claim 1 , wherein the chamber further includes a brake filter through which the ionized gas is supplied. 3. The method of claim 1 , wherein after performing said accommodating step and before performing the first step, the inner pressure is maintained at a predetermined pressure while starting supply of the ionized gas into the chamber main body. 4. The method of claim 3 , wherein the chamber further includes a brake filter through which the ionized gas is supplied.
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