Systems and methods for using power dividers for improved ferrite circulator rf power handling
US-2016380323-A1 · Dec 29, 2016 · US
US9373880B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9373880-B2 |
| Application number | US-201414313400-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 24, 2014 |
| Priority date | Jun 24, 2014 |
| Publication date | Jun 21, 2016 |
| Grant date | Jun 21, 2016 |
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An enhanced hybrid-tee coupler (“EHT-coupler”), the EHT-coupler is described. The EHT-coupler includes a first waveguide, second waveguide, third waveguide, and fourth waveguide. The first waveguide defines a first port and the second waveguide defines a second port. Similarly, the third waveguide defines a fourth port and the fourth waveguide defines a fourth port. The first, second, third, and fourth waveguides meet in a single common junction and the first waveguide and second waveguide are collinear. The third waveguide forms an E-plane junction with both the first waveguide and the second waveguide and the fourth waveguide forms an H-plane junction with both the first waveguide and the second waveguide. The EHT-coupler also includes a first impedance matching element positioned in the common junction where the first impedance matching element includes a base and a tip.
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What is claimed is: 1. An enhanced hybrid-tee coupler (“EHT-coupler”), the EHT-coupler comprising: a first waveguide defining a first port; a second waveguide defining a second port; a third waveguide defining a third port; a fourth waveguide defining a fourth port; wherein the first, second, third, and fourth waveguides meet in a common junction, the first waveguide and second waveguide are collinear, the third waveguide forms an E-plane junction with both the first waveguide and the second waveguide, and the fourth waveguide forms an H-plane junction with both the first waveguide and the second waveguide; and a first means for impedance matching positioned in the common junction; a second means for impedance matching positioned at a first top wall of the first waveguide external to the common junction; a third means for impedance matching positioned at a second top wall of the second waveguide external to the common junction; a fourth means for impedance matching positioned at a third top wall of the fourth waveguide external to the common junction, wherein the first top wall and the second top wall are opposing waveguide walls that are opposite to the coplanar common waveguide wall, and the third top wall is an opposing waveguide wall that is opposite to the coplanar common waveguide wall; a fifth means for impedance matching positioned at a front broad wall of the third waveguide external to the common junction; and a sixth means for impedance matching positioned at a back broad wall of the third waveguide external to the common junction, wherein the front broad wall is opposite the back broad wall. 2. The EHT-coupler of claim 1 , wherein the sixth means for impedance matching includes a means for narrowing a first waveguide width of the fourth waveguide, at the fourth port, to a second narrower waveguide dimension prior to the common junction. 3. An enhanced hybrid-tee coupler (“EHT-coupler”), the EHT-coupler comprising: a first waveguide defining a first port; a second waveguide defining a second port; a third waveguide defining a third port; a fourth waveguide defining a fourth port, wherein the first, second, third, and fourth waveguides meet in a common junction, the first waveguide and second waveguide are collinear, the third waveguide forms an E-plane junction with both the first waveguide and the second waveguide, and the fourth waveguide forms an H-plane junction with both the first waveguide and the second waveguide; a first impedance matching element positioned in the common junction, wherein the first impedance matching element includes a base and a tip, the base of the first impedance matching element is located at a coplanar common waveguide wall of the first waveguide, second waveguide, and fourth waveguide, and the tip of the first impedance matching element extends outward from the base of the first impedance matching element directed towards the third waveguide; a second impedance matching element positioned at a first top wall of the first waveguide external to the common junction; a third impedance matching element positioned at a second top wall of the second waveguide external to the common junction; a fourth impedance matching element positioned at a third top wall of the fourth waveguide external to the common junction, wherein the first top wall and the second top wall are opposing waveguide walls that are opposite to the coplanar common waveguide wall, and the third top wall is an opposing waveguide wall that is opposite to the coplanar common waveguide wall; a fifth impedance matching element positioned at a front broad wall of the third waveguide external to the common junction, and a sixth impedance matching element positioned at a back broad wall of the third waveguide external to the common junction, wherein the front broad wall is opposite the back broad wall. 4. The EHT-coupler of claim 3 , further including a seventh impedance matching element positioned at a first side-wall of the fourth waveguide external to the common junction, and an eighth impedance matching element positioned at a second side-wall of the fourth waveguide external to the common junction, wherein the second side-wall is opposite the first side-wall. 5. The EHT-coupler of claim 4 , wherein the seventh and eighth impedance matching elements form a waveguide transformer that narrows a first waveguide width of the fourth waveguide, at the fourth port, to a second narrower waveguide dimension prior to the common junction. 6. The EHT-coupler of claim 5 , wherein the tip of the first impedance matching element is a cone or a pyramid. 7. The EHT-coupler of claim 6 , wherein the first impedance matching element is of a material selected from the group consisting of copper, silver, aluminum, gold, and any metal that has a low bulk resistivity. 8. The EHT-coupler of claim 6 , wherein the first, second, third, and fourth waveguides are rectangular waveguides. 9. The EHT-coupler of claim 8 , wherein the rectangular waveguides have internal dimensions of 0.750 inches by 0.375 inches. 10. The EHT-coupler of claim 9 , wherein the first, second, third, fourth, fifth, and sixth impedance matching elements are capacitive tuning elements. 11. The EHT-coupler of claim 10 , wherein the first and second waveguides have a common narrow wall, wherein the third waveguide includes a back narrow wall that is coplanar with the common narrow wall of the first and second waveguides, wherein the first matching element is approximately 0.655 inches in height extending from the coplanar common waveguide wall, wherein the first impedance matching element is approximately 1.14 inches in diameter at the base, wherein the diameter extends radially from a centerline of the back narrow wall of the third waveguide, wherein the base of the first impedance matching element extends approximately 0.8125 inches from the back narrow wall. 12. The EHT-coupler of claim 11 , wherein the coplanar common waveguide wall has a centerline, and wherein the tip of the first impedance matching element is offset from the centerline of the coplanar common waveguide wall. 13. The EHT-coupler of claim 12 , wherein the tip is approximately 0.250 inches from the back narrow wall of the third waveguide. 14. The EHT-coupler of claim 13 , wherein the second and third impedance matching elements are aligned along the centerline of the first and second waveguides, and wherein the fourth impedance matching element is aligned along the centerline of the fourth waveguide. 15. The EHT-coupler of claim 14 , wherein the seventh and eight impedance matching elements are aligned along a centerline of the third waveguide. 16. The EHT-coupler of claim 15 , wherein the seventh and eight impedance matching elements are configured as an inductive iris. 17. The EHT-coupler of claim 15 , wherein the second impedance element is a capacitive tuning stub that has an approximate 0.112 inch diameter that is located approximately 0.296 inches away from the back broad wall and extends approximately 0.050 inches from the first top wall, wherein the third impedance element is a capacitive tuning stub that has an approximate 0.112 inch diameter that is located approximately 0.296 inches away from the front broad wall and extends approximately 0.050 inches from the second top wall, and wherein the fourth impedance element is a capacitive tuning stub that has an approximate 0.112 inch diameter that is located approximately 0.296 inches away from the front narrow wall and extends approximately 0.070 inches from the
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