Image sensor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9368538-B2
Application number	US-201514692439-A
Country	US
Kind code	B2
Filing date	Apr 21, 2015
Priority date	Sep 25, 2014
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

An image sensor device includes a top substrate and a subassembly. The top substrate includes a plurality of connection pillars, and the subassembly includes a plurality of connection pads. The connection pillars on the top substrate are bonded to the connection pads in the subassembly. The connection pillars are formed of a first metal and the connection pads are formed of a second metal.

First claim

What is claimed is:

1. An image sensor device comprising:
a top substrate including a plurality of connection pillars; and
a subassembly including a plurality of connection pads,
wherein a first bonding surface of the plurality of connection pillars and a second bonding surface of the plurality of connection pads have a substantially similar width in a plan view,
wherein the connection pillars on the top substrate are directly bonded to the connection pads in the subassembly by metallic compression bonding, and
wherein the connection pillars are formed of a first metal and the connection pads are formed of a second metal.

2. The image sensor device according to claim 1 , wherein the top substrate is made of glass.

3. The image sensor device according to claim 1 , wherein the subassembly includes a bottom substrate made of silicon.

4. The image sensor device according to claim 3 , wherein the connection pads are disposed at two end portions of the bottom substrate.

5. The image sensor device according to claim 1 , wherein the subassembly includes an optically transmissive region, and
wherein the connection pads are disposed outside the optically transmissive region in the subassembly.

6. The image sensor device according to claim 1 , wherein the first metal and the second metal are copper.

7. The image sensor device according to claim 1 , wherein the first metal is aluminum and the second metal is germanium.

8. The image sensor device according to claim 3 , wherein the subassembly further comprises:
a plurality of optical components disposed on the bottom substrate,
wherein the connection pads are disposed adjacent to the edge-most optical components on the bottom substrate.

9. A method of manufacturing an image sensor device, comprising:
forming a plurality of connection pillars on a top substrate;
providing a subassembly comprising a plurality of connection pads; and
bonding the connection pillars on the top substrate to the connection pads in the subassembly by direct metallic compression bonding,
wherein a first bonding surface of the plurality of connection pillars and a second bonding surface of the plurality of connection pads have a substantially similar width in a plan view,
wherein the connection pillars are formed of a first metal and the connection pads are formed of a second metal.

10. The method according to claim 9 , wherein the top substrate is made of glass.

11. The method according to claim 9 , wherein the subassembly includes a bottom substrate made of silicon.

12. The method according to claim 11 , wherein the connection pads are formed at two end portions of the bottom substrate.

13. The method according to claim 9 , wherein the subassembly includes an optically transmissive region, and
wherein the connection pads are disposed outside the optically transmissive region in the subassembly.

14. The method according to claim 9 , wherein forming the plurality of connection pillars further comprises:
forming a seed layer on the top substrate;
forming a patterned photoresist on a portion of the seed layer, the patterned photoresist exposing two end portions of the seed layer;
electroplating the seed layer using the patterned photoresist as a mask, so as to form the connection pillars at the two end portions of the seed layer; and
removing the patterned photoresist and the portion of the seed layer.

15. The method according to claim 9 , wherein forming the plurality of connection pillars further comprises:
forming a seed layer on the top substrate;
electroplating the seed layer to form a metal layer; and
etching the metal layer so as to form the connection pillars at two end portions of the metal layer.

16. The method according to claim 9 , wherein the first metal and the second metal are copper.

17. The method according to claim 9 , wherein the first metal is aluminum and the second metal is germanium.

18. The method according to claim 11 , wherein the subassembly further comprises:
a plurality of optical components disposed on the bottom substrate,
wherein the connection pads are disposed adjacent to the edge-most optical components on the bottom substrate.

19. The method according to claim 9 , wherein the connection pillars on the top substrate are bonded to the connection pads in the subassembly at a bonding temperature ranging from about 200° C. to about 500° C., a bonding pressure ranging from about 10 kN to about 100 kN, and a bonding time ranging from about 0.5 hrs to about 3 hrs.

Assignees

• Semiconductor Mfg Int Shanghai

Inventors

• Zhang Haifang
• Huang Herb He
• Liu Xuan Jie
• Feng Xia
• Wu Pinghuan

Classifications

• H10W72/20

  Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps · CPC title

• H10F39/804

  Containers or encapsulations · CPC title

• H10F39/026

  Wafer-level processing · CPC title

• H10F39/811 Primary

  Interconnections · CPC title

• H01L27/14636 Primary

  Electricity · mapped topic