MEMS devices and methods for forming same

Patent metadata

Field	Value
Publication number	US-9352956-B2
Application number	US-201414157273-A
Country	US
Kind code	B2
Filing date	Jan 16, 2014
Priority date	Jan 16, 2014
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

First claim

What is claimed is:

1. A method comprising:
forming a first microelectromechanical system (MEMS) die having a first cavity and a first substrate, the first cavity having a first pressure;
forming a second MEMS die having a second cavity and a second substrate, the second cavity having a second pressure, the second pressure being different from the first pressure, the second substrate being physically disconnected from the first substrate;
encapsulating the first MEMS die and the second MEMS die with a molding material, the molding material having a first surface;
forming a first set of electrical connectors in the molding material, each electrical connector of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material; and
forming a second set of electrical connectors over the first surface of the molding material, each electrical connector of the second set of electrical connectors being coupled to at least one electrical connector of the first set of electrical connectors.

2. The method of claim 1 further comprising forming a third MEMS die having a third cavity, the third cavity having a third pressure, the third pressure being different from the first pressure and the second pressure.

3. The method of claim 2 , wherein the first pressure is a high pressure, the second pressure is a low pressure, and the third pressure is an ambient pressure.

4. The method of claim 2 , wherein the first MEMS die comprises an accelerometer, the second MEMS die comprises a gyroscope, and the third MEMS die comprises a pressure sensor.

5. The method of claim 1 further comprising forming an application-specific integrated circuit (ASIC) die, the ASIC die comprising an active device, wherein the encapsulating the first MEMS die and the second MEMS die with a molding material further comprises encapsulating the ASIC die.

6. The method of claim 5 , wherein each of the first MEMS die, the second MEMS dies, and the ASIC die have a surface substantially coplanar with a second surface of the molding material, the second surface being opposite of the first surface.

7. The method of claim 5 further comprising:
attaching the first MEMS die to a first surface of the ASIC die; and
attaching the second MEMS die to the first surface of the ASIC die, at least a portion of the molding material extending between the first and the second MEMS dies to the first surface of the ASIC die.

8. The method of claim 1 , wherein the forming the first set of electrical connectors in the molding material comprises performing a wire bonding.

9. The method of claim 1 , wherein the forming the first set of electrical connectors in the molding material comprises electrical plating.

10. The method of claim 1 further comprising:
forming redistribution lines (RDLs) over the first surface of the molding material and the first MEMS die and the second MEMS die, the RDLs being coupled to the first set of electrical connectors;
forming a dielectric layer over the RDLs and the first surface of the molding material;
forming openings through the dielectric layer to expose surfaces of the RDLs;
forming under bump metallizations (UBMs) in the openings and extending over the dielectric layer, the UBMs being coupled to the RDLs; and
forming the second set of electrical connectors over and electrically coupled to the UBMs, the second set of electrical connectors comprising solder balls.

11. A method comprising:
forming a microelectromechanical system (MEMS) wafer, the MEMS wafer having a first MEMS structure, a second MEMS structure, and a third MEMS structure;
bonding a cap wafer to the MEMs wafer, the bonding forming a first cavity over the first MEMS structure, a second cavity over the second MEMS structure, and a third cavity over the third MEMS structure;
singulating the MEMS wafer forming a first MEMS die comprising the first MEMS structure and the first cavity, a second MEMS die comprising the second MEMS structure and the second cavity, and a third MEMS die comprising the third MEMS structure and the third cavity;
attaching the first MEMS die, the second MEMS die, and the third MEMS die to a carrier substrate;
encapsulating the first MEMS die, the second MEMS die, and the third MEMS die with a molding material, the molding material extending from the carrier substrate over the first MEMS die, the second MEMS die, and the third MEMS die; and
removing the carrier substrate.

12. The method of claim 11 further comprising before encapsulating the first MEMS die, the second MEMS die, and the third MEMS die with the molding material, testing the first MEMS die, the second MEMS die, and the third MEMS die.

13. The method of claim 11 further comprising:
forming an application-specific integrated circuit (ASIC) die having at least one active device; and
before encapsulating the first MEMS die, the second MEMS die, and the third MEMS die with the molding material, attaching the ASIC die to the carrier substrate, wherein encapsulating the first MEMS die, the second MEMS die, and the third MEMS die with the molding material further comprises encapsulating the ASIC die with the molding material.

14. The method of claim 11 , wherein the first cavity has a first pressure, wherein the second cavity has a second pressure, the second pressure being different from the first pressure, and wherein the third cavity has a third pressure, the third pressure being different from the first pressure and the second pressure.

15. The method of claim 11 further comprising:
forming a set of metal studs in the molding material, each metal stud of the set of metal studs extending from at least one of the first MEMS die, the second MEMS die, and the third MEMS die to a first surface of the molding material;
forming redistribution lines (RDLs) over the first surface of the molding material and the first MEMS die, the second MEMS die, and the third MEMS die, the RDLs being coupled to the set of metal studs; and
forming a set of solder balls over and electrically coupled to the RDLs.

16. A method comprising:
forming a first microelectromechanical system (MEMS) die having a first cavity, the first cavity having a first pressure;
forming a second MEMS die having a second cavity, the second cavity having a second pressure, the second pressure being different from the first pressure;
forming an application-specific integrated circuit (ASIC) die, the ASIC die comprising an active device;
encapsulating the first MEMS die, the second MEMS die, and the ASIC die with a molding material, the molding material having a first surface;
forming a first set of electrical connectors in the molding material, each electrical connector of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material;
forming redistribution lines (RDLs) over the first surface of the molding material and the first MEMS die and the second MEMS die, the RDLs being coupled to the first set of electrical connectors; and
forming a second set of electrical connectors over the RDLs, each electrical connector of the second set of electrical connectors being coupled to at least one of the RDLs.

17. The method of claim 16 , wherein the forming the first MEMS die, the forming the second MEMS die, and the forming the ASIC die further comprises:
forming a MEMS wafer, the MEMS wafer having a first MEMS structure and a second MEMS structure;
bonding a cap wafer to the MEMs wafer, the bonding forming the first cavity

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Cheng Chun-Wen
• Peng Jung-Huei
• Tsai Shang-Ying
• Tsai Hung-Chia
• Teng Yi-Chuan

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10W76/15

  Containers comprising an insulating or insulated base · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• B81C2203/0154

  Moulding a cap over the MEMS device · CPC title

• B81B7/02

  containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title