Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

Patent metadata

Field	Value
Publication number	US-9406502-B2
Application number	US-201514685697-A
Country	US
Kind code	B2
Filing date	Apr 14, 2015
Priority date	Jan 19, 2005
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

First claim

What is claimed is:

1. A method of forming a semiconductor using atomic layer deposition, the method comprising:
supplying a source gas through a first path to a reaction chamber;
supplying a carrier gas through a second path to a bypass of the reaction chamber, wherein the second path includes a first portion of the first path and the carrier gas purges the source gas from the first portion of the first path;
supplying a purge gas through a third path to the reaction chamber to purge the source gas from the reaction chamber, wherein the third path includes a second portion of the first path and the purge gas purges the source gas from the reaction chamber and the second portion of the first path; and
supplying a reactive gas through a fourth path to the reaction chamber,
wherein the second path and the third path meet at a junction of the first portion and the second portion of the first path.

2. The method of claim 1 , wherein the first path, the second path and the third path intersect at and pass through a 4-way valve.

3. The method of claim 2 , wherein the first path passes through a first inlet and a first outlet of the 4-way valve, the second path passes through the first inlet and a second outlet of the 4-way valve, and the third path passes through a second inlet and the first outlet of the 4-way valve.

4. The method of claim 3 , wherein the 4-way valve is set in a first state when the source gas is supplied through the first path to the reaction chamber, and
the 4-way valve is set in a second state when the carrier gas is supplied through the second path to the bypass.

5. The method of claim 4 , wherein the purge gas is continuously supplied through the third path to the reaction chamber when the 4-way valve is set to the first state and when the 4-way valve is set to the second state.

6. The method of claim 1 , further comprising interrupting the supplying of the reactive gas, and supplying the purge gas through the third path to the reaction chamber to purge the reactive gas from the reaction chamber.

7. The method of claim 1 ,
wherein the method further comprises supplying the carrier gas through the first path to the reaction chamber during the supplying of the source gas through the first path to the reaction chamber.

Assignees

• Samsung Electronics Co Ltd
• Genitech Inc

Inventors

• Won Seok-Jun
• Yoo Yong-Min
• Kim Dae-Youn
• Kim Young-Hoon
• Kwon Dae-Jin
• Kim Weon-Hong

Classifications

• C23C16/405

  of refractory metals or yttrium · CPC title

• C23C16/403

  of aluminium, magnesium or beryllium · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title