Method for controlling the diameter of a single crystal to a set point diameter

Patent metadata

Field	Value
Publication number	US-9340897-B2
Application number	US-201414285752-A
Country	US
Kind code	B2
Filing date	May 23, 2014
Priority date	Jun 7, 2013
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

The diameter of a single crystal is controlled to a set point diameter during pulling of the single crystal from a melt contained in a crucible and which forms a meniscus at a phase boundary on the edge of the single crystal, the meniscus having a height which corresponds to the distance between the phase boundary and a level of the surface of the melt outside the meniscus, comprising repeatedly:
determining the diameter of a bright ring on the meniscus; calculating a diameter of the single crystal while taking into account the diameter of the bright ring and the dependency of the diameter of the bright ring on the height of the meniscus and on the diameter of the single crystal itself; and calculating at least one manipulated variable for controlling the diameter of the single crystal on the basis of the difference between the calculated diameter of the single crystal and the set point diameter of the single crystal.

First claim

What is claimed is:

1. A method for controlling the diameter of a single crystal to a setpoint diameter during the pulling of the single crystal from a melt contained in a crucible wherein the melt forms a meniscus at a phase boundary on the edge of the single crystal, the meniscus having a height which corresponds to the distance between the phase boundary and a level of the surface of the melt outside the meniscus, comprising repeatedly conducting the following steps:
determining the diameter of a bright ring on the meniscus;
calculating a diameter of the single crystal while taking into account the diameter of the bright ring and the dependency of the diameter of the bright ring on the height of the meniscus and on the diameter of the single crystal itself; and
calculating at least one manipulated variable for controlling the diameter of the single crystal on the basis of the difference between the calculated diameter of the single crystal and the set point diameter of the single crystal,
wherein the calculated manipulated variable is supplied to a control unit which controls the diameter of the single crystal.

2. The method of claim 1 , further comprising forming a look-up table which is based on simulation data and which allocates the height of the meniscus to the derivative of the diameter of the bright ring as a function of time.

3. The method of claim 1 , wherein the height of the meniscus is calculated from a linearized determination equation.

4. The method of claim 1 , comprising calculation of the manipulated variable as an output variable of a PID controller.

5. The method of claim 1 , comprising calculation of the manipulated variable as an output variable of a state feedback control.

6. The method of claim 1 , wherein a lift rate is calculated as a manipulated variable.

7. The method of claim 1 , wherein an electrical power of a heat source, which annularly encloses the single crystal, is calculated as a manipulated variable.

8. The method of claim 1 , wherein a lift rate is calculated as a first manipulated variable and an electrical power of a heat source, which annularly encloses the single crystal, is calculated as a second manipulated variable.

9. The method of claim 1 , further comprising establishing a control loop which reacts in the event of deviations of a lift rate v p from a setpoint lift rate v ps or deviations of an electrical power L r from a setpoint power L rs , the manipulated variable of which modifies the electrical power L f of one or more heat sources.

10. The method of claim 9 , wherein the electrical power of a heat source located between the single crystal and a heat shield above the melt surrounding the single crystal, the heat source heating a region of a phase boundary between the single crystal and the melt, is modified.

11. The method of claim 9 , wherein the electrical power L f of one or more heat sources arranged around the crucible is modified.

Assignees

• Siltronic Ag

Inventors

• Schroeck Thomas

Classifications

• C30B15/22 Primary

  Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal · CPC title

• C30B29/06

  Silicon · CPC title

• C30B29/00

  Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape · CPC title

• C30B15/26

  using television detectors; using photo or X-ray detectors · CPC title