Composite dilation mode resonators

Patent metadata

Field	Value
Publication number	US-9331666-B2
Application number	US-201213657653-A
Country	US
Kind code	B2
Filing date	Oct 22, 2012
Priority date	Oct 22, 2012
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

This disclosure provides systems, methods and apparatus related to acoustic resonators that include composite transduction layers for enabling selective tuning of one or more acoustic or electromechanical properties. In one aspect, a resonator structure includes one or more first electrodes, one or more second electrodes, and a transduction layer arranged between the first and second electrodes. The transduction layer includes a plurality of constituent layers. In some implementations, the constituent layers include one or more first piezoelectric layers and one or more second piezoelectric layers. The transduction layer is configured to, responsive to signals provided to the first and second electrodes, provide at least a first mode of vibration of the transduction layer with a displacement component along the z axis and at least a second mode of vibration of the transduction layer with a displacement component along the plane of the x axis and they axis.

First claim

What is claimed is:

1. A resonator structure comprising:
a first conductive layer including one or more first electrodes;
a second conductive layer including one or more second electrodes; and
a transduction layer arranged between the first conductive layer and the second conductive layer, the transduction layer having a thickness along a z axis, a width along an x axis, and a length along a y axis, the transduction layer including:
at least one first portion formed of a first piezoelectric material having a first set of piezoelectric coefficients and a first set of stiffness coefficients, the first portion having a first surface adjacent the first conductive layer and a second surface adjacent the second conductive layer opposite the first surface; and
at least one second portion formed of a second piezoelectric material different than the first piezoelectric material and having a second set of piezoelectric coefficients and a second set of stiffness coefficients, the second portion having a first surface adjacent the first conductive layer and a second surface adjacent the second conductive layer opposite the first surface;
each of the at least one first portion and the at least one second portion having substantially the same height along the z axis and substantially the same length along the y axis, the upper surfaces of each of the at least one first portion and the at least one second portion being substantially coplanar; and
wherein the transduction layer is configured to, responsive to one or more signals provided to each of one or more of the first electrodes and the second electrodes, provide at least a first mode of vibration of the transduction layer.

2. The resonator structure of claim 1 , wherein the transduction layer includes two or more first portions.

3. The resonator structure of claim 2 , wherein the first and the second portions alternate periodically along the x axis.

4. The resonator structure of claim 2 , wherein the transduction layer includes at least one third portion formed of a third material having a third set of stiffness coefficients.

5. The resonator structure of claim 2 , wherein the transduction layer includes at least one gap or void between at least one first portion and at least one second portion.

6. The resonator structure of claim 1 , wherein the first piezoelectric material is or includes zinc oxide (ZnO) and the second piezoelectric material is or includes aluminum nitride (AlN).

7. The resonator structure of claim 1 , wherein the first piezoelectric material is or includes zinc oxide (ZnO) or aluminum nitride (AlN), and the second piezoelectric material is or includes lead zirconate titanate (PZT).

8. The resonator structure of claim 1 , wherein a resonant frequency of the resonator structure is a function of at least the thickness of the transduction layer, the first set of stiffness coefficients, and the second set of stiffness coefficients.

9. The resonator structure of claim 1 , wherein a resonant frequency of the resonator structure is a function of a mass density of at least one of the first piezoelectric material and the second piezoelectric material.

10. The resonator structure of claim 1 , wherein a resonant frequency of the resonator structure is a function of at least one of the first set of piezoelectric coefficients and at least one of the second set of piezoelectric coefficients.

11. The resonator structure of claim 1 , wherein a resonant frequency of the resonator structure is defined at least in part by the ratio of the combined width of all of the at least one second portions to the entire width of the transduction layer.

12. The resonator structure of claim 1 , wherein an electromechanical coupling of the transduction layer is a function of at least one of the first set of piezoelectric coefficients and the second set of piezoelectric coefficients.

13. The resonator structure of claim 2 , wherein the first and the second portions are arranged symmetrically relative to a mid-plane of the transduction layer along the y and z axes.

14. The resonator structure of claim 1 , wherein the first mode of vibration includes a displacement component along the z axis and at least one displacement component along the plane of the x axis and the y axis.

15. A device comprising:
an array of resonator structures, the array of resonator structures including a plurality of sets of one or more resonator structures, each resonator structure including:
a first conductive layer including one or more first electrodes;
a second conductive layer including one or more second electrodes; and
a transduction layer arranged between the first conductive layer and the second conductive layer, the transduction layer having a thickness along a z axis, a width along an x axis, and a length along a y axis, the transduction layer including:
at least one first portion formed of a first piezoelectric material having a first set of piezoelectric coefficients and a first set of stiffness coefficients, the first portion having a first surface adjacent the first conductive layer and a second surface adjacent the second conductive layer opposite the first surface; and
at least one second portion formed of a second piezoelectric material different than the first piezoelectric material and having a second set of piezoelectric coefficients and a second set of stiffness coefficients, the second portion having a first surface adjacent the first conductive layer and a second surface adjacent the second conductive layer opposite the first surface;
each of the at least one first portion and the at least one second portion having substantially the same height along the z axis and substantially the same length along the y axis, the upper surface of each of the at least one first portion and the at least one second portion being substantially coplanar; and
wherein the transduction layer is configured to, responsive to one or more signals provided to each of one or more of the first electrodes and the second electrodes, provide at least a first mode of vibration of the transduction layer;
wherein a thickness of the transduction layer of each resonator structure is substantially equal to the thicknesses of the transduction layers in all the other resonator structures in the array of resonator structures; and
wherein a combination of the first and second piezoelectric coefficients and the first and second stiffness coefficients in the transduction layer of each resonator structure in each set of resonator structures is substantially the same combination as in the other resonator structures of the set and different than the combinations in the other resonator structures of all the other sets in the array of resonator structures.

16. The device of claim 15 , wherein the transduction layer includes two or more first portions.

17. The device of claim 16 , wherein the first and the second portions alternate periodically along the x axis.

18. The device of claim 16 , wherein the transduction layer includes at least one third portion formed of a third material having a third set of stiffness coefficients.

19. The device of claim 16 , wherein the transduction layer includes at least one gap or void between at least one first portion and at least one second portion.

20. The device of claim 15 , wherein a resonant frequency of each resonator structure is a function of at least the thickness of the transduction layer of the resonator structure, the first set of stiffness coefficients of the resonator structure, an

Assignees

• Qualcomm Mems Technologies Inc

Inventors

• Zuo Chengjie
• Kim Jonghae
• Yun Changhan Hobie
• Park Sang-June
• Stephanou Philip Jason
• Lo Chi Shun
• Mikulka Robert Paul
• Velez Mario Francisco
• Shenoy Ravindra V
• Nowak Matthew Michael

Classifications

• H03H2009/241

  Bulk-mode MEMS resonators · CPC title

• H03H9/02157 Primary

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title

• H03H9/205

  having multiple resonators (crystal tuning forks H03H9/21) · CPC title

• H03H2009/02503

  Breath-like, e.g. Lam? mode, wine-glass mode · CPC title

• H03H9/02574

  of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title