Acoustic wave device

Patent metadata

Field	Value
Publication number	US-9184725-B2
Application number	US-201213556865-A
Country	US
Kind code	B2
Filing date	Jul 24, 2012
Priority date	Aug 9, 2011
Publication date	Nov 10, 2015
Grant date	Nov 10, 2015

Abstract

An acoustic wave device includes: a substrate; a lower electrode formed on the substrate; at least two piezoelectric films formed on the lower electrode; an insulating film located between the at least two piezoelectric films; and an upper electrode formed on the at least two piezoelectric films, wherein an outer periphery of an uppermost piezoelectric film out of the at least two piezoelectric films in a region in which the lower electrode and the upper electrode face each other is positioned further in than an outer periphery of the upper electrode.

First claim

What is claimed is:

1. An acoustic wave device comprising:
a substrate;
a lower electrode formed on the substrate;
at least two piezoelectric films formed on the lower electrode;
an insulating film located between the at least two piezoelectric films; and
an upper electrode formed on the at least two piezoelectric films,
wherein outer peripheries of upper and lower surfaces of an uppermost piezoelectric film out of the at least two piezoelectric films in a region in which the lower electrode and the upper electrode face each other are positioned further in than an outer periphery of the upper electrode,
wherein in a region in which the outer peripheries of the upper and lower surfaces of the uppermost piezoelectric film are positioned further in than the outer periphery of the upper electrode, outer peripheries of upper and lower surfaces of a lowermost piezoelectric film out of the at least two piezoelectric films are positioned further out than the outer periphery of the upper electrode; and
wherein no electrode is formed between the lower electrode and the upper electrode.

2. The acoustic wave device according to claim 1 , wherein
a space or an acoustic reflection film are provided below the lower electrode, and
in the region in which the outer peripheries of the upper and lower surfaces of the uppermost piezoelectric film are positioned further in than the outer periphery of the upper electrode, an outer periphery of the space or an outer periphery of the acoustic reflection film is positioned further out than the outer periphery of the upper electrode.

3. The acoustic wave device according to claim 1 , wherein
a space is provided below the lower electrode, and
in the region in which the outer peripheries of the upper and lower surfaces of the uppermost piezoelectric film are positioned further in than the outer periphery of the upper electrode, an outer periphery of the space is positioned further out than the outer periphery of the upper electrode, and is positioned further in than the outer peripheries of the upper and lower surfaces of the lowermost piezoelectric film.

4. The acoustic wave device according to claim 1 , wherein
the insulating film has a temperature coefficient of an elastic constant which is opposite in sign to those of the at least two piezoelectric films.

5. The acoustic wave device according to claim 1 , wherein
the at least two piezoelectric films are two piezoelectric films, and the insulating film is one insulating film.

6. The acoustic wave device according to claim 1 , wherein
the at least two piezoelectric films mainly include aluminum nitride, and the insulating film mainly includes silicon oxide.

7. The acoustic wave device according to claim 1 , further comprising:
acoustic wave resonators including the acoustic wave device according to claim 1 , wherein
the lower electrodes of the acoustic wave resonators are connected to each other, and the lowermost piezoelectric films of the acoustic wave resonators are connected each other and/or the insulating films of the acoustic wave resonators are connected to each other.

8. An acoustic wave device comprising:
a reception filter which outputs a balanced output by a longitudinally coupled double-mode surface acoustic wave filter; and
a transmission filter in which acoustic wave resonators including at least one acoustic wave device according to claim 1 are connected in a ladder shape.

9. An acoustic wave device comprising:
a substrate;
a lower electrode formed on the substrate;
at least two piezoelectric films formed on the lower electrode;
an insulating film located between the at least two piezoelectric films; and
an upper electrode formed on the at least two piezoelectric films,
wherein an outer periphery of an uppermost piezoelectric film out of the at least two piezoelectric films in a region in which the lower electrode and the upper electrode face each other is positioned further in than an outer periphery of the upper electrode, and
wherein the insulating film is not formed between the upper electrode and the substrate which are located in at least a part of a region in which the upper electrode is formed and the lower electrode is not formed.

Assignees

• Taniguchi Shinji
• Nishihara Tokihiro
• Ueda Masanori
• Yokoyama Tsuyoshi
• Sakashita Takeshi
• Taiyo Yuden Kk

Inventors

• Taniguchi Shinji
• Nishihara Tokihiro
• Ueda Masanori
• Yokoyama Tsuyoshi
• Sakashita Takeshi

Classifications

• H03H9/02102 Primary

  of temperature influence (cutting angles H03H9/02015) · CPC title

• H03H9/706

  Duplexers · CPC title

• H03H9/173

  Air-gaps · CPC title

• H03H2003/0407

  Temperature coefficient · CPC title

• H03H9/02118

  of lateral leakage between adjacent resonators · CPC title