Laser diode device

Patent metadata

Field	Value
Publication number	US-9331453-B2
Application number	US-201314373998-A
Country	US
Kind code	B2
Filing date	Mar 11, 2013
Priority date	Apr 12, 2012
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm.

First claim

The invention claimed is:

1. A laser diode device comprising:
a housing having a mounting part;
a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, the chip having, on a substrate, semiconductor layers with an active layer for generating light and the chip having a radiation coupling-out area with a radiation coupling-out region for emitting the generated light, a rear side area situated opposite the radiation coupling-out area, and side areas connecting the radiation coupling-out area and the rear side area; and
a solder layer, wherein the laser diode chip is mounted directly on the mounting part by means of the solder layer, wherein the solder layer has a thickness of greater than or equal to 3 μm, and wherein the housing has a housing part connected to the mounting part, the housing part and the mounting part have a main body composed of copper, and at least the housing part is steel-sheathed.

2. The laser diode device according to claim 1 , wherein the substrate is an electrically conductive substrate composed of crystalline (In, Al, Ga)N and the laser diode chip is mounted on the mounting part by means of the solder layer directly with the substrate or with an electrical connection layer of the laser diode chip, the electrical connection layer being arranged on a side of the substrate facing away from the semiconductor layers.

3. The laser diode device according to claim 1 , wherein the mounting part has a metal-core circuit board or a main body composed of metal or ceramic.

4. The laser diode device according to claim 1 , wherein the housing has a housing cover above the mounting part, the housing cover closing the housing.

5. The laser diode device according to claim 1 , wherein the solder layer comprises a soft solder.

6. The laser diode device according to claim 1 , wherein the laser diode chip has a strain that endeavors to convexly deform an underside of the laser diode chip facing the mounting part, or that counteracts at least a concave deformation of the underside facing the mounting part.

7. The laser diode device according to claim 1 , wherein the laser diode chip has, in an underside facing the mounting part, at least one anchoring element for the solder layer, the at least one anchoring element being formed by a depression or elevation.

8. The laser diode device according to claim 7 , wherein the laser diode chip has a plurality of anchoring elements embodied as elevations and/or depressions in the underside.

9. The laser diode device according to claim 7 , wherein the laser diode chip has as anchoring element a stepped depression at a chip edge between the underside and the radiation coupling-out area or the rear side area or a side area.

10. The laser diode device according to claim 1 , wherein the laser diode chip has a metallization on the side areas.

11. The laser diode device according to claim 1 , wherein the laser diode chip has a metallization on the radiation coupling-out area and/or the rear side area.

12. The laser diode device according to claim 11 , wherein the metallization is arranged directly on the semiconductor layers between the semiconductor layers and an optical layer on the radiation coupling-out area and/or the rear side area.

13. The laser diode device according to claim 10 , wherein the metallization forms outer sides of the laser diode chip and a solder of the solder layer wets the metallization.

14. The laser diode device according to claim 10 , wherein the metallization comprises at least one or more metals selected from the group consisting of Au, Ti, Pt, Cr, Pd, Ni, Ag, W and Cu.

15. The laser diode device according to claim 10 , wherein the laser diode chip has, on a top side facing away from the mounting part, at least one depression that extends from the rear side area to the radiation coupling-out area and that is covered with a passivation.

16. A laser diode device comprising:
a housing having a mounting part;
a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, the chip having, on a substrate, semiconductor layers with an active layer for generating light and the chip having a radiation coupling-out area with a radiation coupling-out region for emitting the generated light, a rear side area situated opposite the radiation coupling-out area, and side areas connecting the radiation coupling-out area and the rear side area; and
a solder layer, wherein the laser diode chip is mounted directly on the mounting part by means of the solder layer, wherein the solder layer has a thickness of greater than or equal to 3 μm, and wherein the laser diode chip has a strain that endeavors to convexly deform an underside of the laser diode chip facing the mounting part, or that counteracts at least a concave deformation of the underside facing the mounting part.

17. A laser diode device comprising:
a housing having a mounting part;
a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, the chip having, on a substrate, semiconductor layers with an active layer for generating light and the chip having a radiation coupling-out area with a radiation coupling-out region for emitting the generated light, a rear side area situated opposite the radiation coupling-out area, and side areas connecting the radiation coupling-out area and the rear side area; and
a solder layer, wherein the laser diode chip is mounted directly on the mounting part by means of the solder layer, wherein the solder layer has a thickness of greater than or equal to 3 μm, and wherein the laser diode chip has, in an underside facing the mounting part, at least one anchoring element for the solder layer, the at least one anchoring element being formed by a depression or elevation.

18. The laser diode device according to claim 17 , wherein the laser diode chip has a plurality of anchoring elements embodied as elevations and/or depressions in the underside.

19. The laser diode device according to claim 17 , wherein the laser diode chip has as anchoring element a stepped depression at a chip edge between the underside and the radiation coupling-out area or the rear side area or a side area.

20. A laser diode device comprising:
a housing having a mounting part;
a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, the chip having, on a substrate, semiconductor layers with an active layer for generating light and the chip having a radiation coupling-out area with a radiation coupling-out region for emitting the generated light, a rear side area situated opposite the radiation coupling-out area, and side areas connecting the radiation coupling-out area and the rear side area; and
a solder layer, wherein the laser diode chip is mounted directly on the mounting part by means of the solder layer, wherein the solder layer has a thickness of greater than or equal to 3 μm, wherein the laser diode chip has a metallization on the side areas, and wherein the laser diode chip has, on a top side facing away from the mounting part, at least one depression that extends from the rear side area to the radiation coupling-out area and that is covered with a passivation.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Strauβ Uwe
• Tautz Sönke
• Lell Alfred
• Vierheilig Clemens

Classifications

• H01S5/0262

  Photo-diodes, e.g. transceiver devices, bidirectional devices (H01S5/0265 takes precedence) · CPC title

• H01S5/02461

  Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity · CPC title

• H01S5/02469

  Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC · CPC title

• H01S5/0237

  by soldering · CPC title

• H01S5/32341

  blue laser based on GaN or GaP · CPC title