Bonding structure of bonding wire

Patent metadata

Field	Value
Publication number	US-9331049-B2
Application number	US-86679709-A
Country	US
Kind code	B2
Filing date	Jul 10, 2009
Priority date	Jul 11, 2008
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump.

First claim

The invention claimed is:

1. A bonding structure of a bonding wire for wedge-bonding the bonding wire onto a ball bump formed on an electrode of a semiconductor device by bonding a ball part formed at an end of the bonding wire, the bonding wire including a core material containing copper as a major component thereof and an outer skin layer which contains a metal R other than copper as a major component thereof and covers the core material, the bonding structure comprising:
a concentrated layer A provided in an initial boundary region at a bonding part between the ball bump and the bonding wire, wherein the concentration of the metal R in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and
a concentrated layer B provided in an initial boundary region at a bonding part between the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump,
wherein the metal R is palladium, or includes two metals consisting of either palladium and silver or palladium and gold,
in the concentrated layer A, there is a range in which the concentration of the metal R is 10mol% or more in a thickness range from 0.01to 5um, and in the concentrated layer B, there is a range in which the concentration of the metal R is 3mol% or more in a thickness range from 0.01to 5um.

2. The bonding structure of the bonding wire according to claim 1 , wherein, in the concentrated layer A, the thickness of a region in which the concentration of the metal R is 50 mol% or more is in a range from 0.005 to 1 μm.

3. The bonding structure of the bonding wire according to claim 1 , wherein at least a part of the concentrated layer B is formed inside of at least one of a diffusion layer and an intermetallic compound, the diffusion layer and the intermetallic compound being each constituted primarily of major components of the electrode and copper.

4. The bonding structure of the bonding wire according to claim 1 , wherein the thickness of a region in which the concentration of the metal R in the concentrated layer A is 50 mol % or more is not less than three times that of a region in which the concentration of the metal R in the concentrated layer B is 50 mol % or more.

5. The bonding structure of the bonding wire according to claim 1 , the bonding structure further comprising a concentrated layer C, comprising two portions:
a first portion formed in 40% or more of a first surface area of the ball bump, which is exposed and without directly connecting to the bonding wire and the electrode; and
a second portion formed in 30% or more of a second surface area of the bonding wire. which is at an ending portion of the bonding wire and is exposed without directly connecting to the ball bump,
wherein the concentration of the metal R in the concentrated layer C is not less than five times the average concentration of the metal R in the ball bump, and
wherein the second surface area of the bonding wire is projected upward.

6. The bonding structure of the bonding wire according to claim 1 , wherein the outermost layer of the outer skin layer contains either an alloy of palladium and silver or an alloy of palladium and gold as a major component thereof; and the concentrated layer A includes an alloy region comprised of either an alloy of palladium and silver or an alloy of palladium and gold, and another region containing palladium in a maximum concentration of 80 mol % or more.

7. The bonding structure of the bonding wire according to claim 1 , wherein the thickness of a region having an oxygen concentration of 10mol% or more is in a range from 0 to 0.05 μm (excluding 0 μm) extending above and below the initial boundary region of the bonding part between the bonding wire and the ball bump.

8. The bonding structure of the bonding wire according to claim 6 , wherein the thickness of the outer skin layer is in a range from 0.002 to 0.8 μm.

9. The bonding structure of the bonding wire according to claim 1 , wherein the outer skin layer has a monolayer structure.

10. A bonding structure of a bonding wire for wedge-bonding the bonding wire onto a ball bump formed on an electrode of a semiconductor device by bonding a ball part formed at an end of the bonding wire, the bonding wire including a core material containing copper as a major component thereof and an outer skin layer which contains a metal R other than copper as a major component thereof and covers the core material, the bonding structure comprising:
a concentrated layer A provided in an initial boundary region at a bonding part between the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and
a concentrated layer C, comprising two portions:
a first portion formed in 40% or more of a first surface area of the ball bump, which is exposed and without directly connecting to the bonding wire and the electrode; and
a second portion formed in 30% or more of a second surface area of the bonding wire, which is at an ending portion of the bonding wire and is exposed without directly connecting to the ball bump,
wherein the concentration of the metal R in the concentrated layer C is not less than five times the average concentration of the metal R in the ball bump,
wherein the second surface area of the bonding wire is projected upward, the metal R is palladium, or includes two metals consisting of either palladium and silver or palladium and gold, in the concentrated layer A, there is a range in which the concentration of the metal R is 10mol% or more in a thickness range from 0.01to 5um, and in the concentrated layer C on the surface of the bump, there is a range in which the concentration of the metal R is 0.5mol% or more in a thickness range from 0.05to 20μm.

11. The bonding structure of the bonding wire according to claim 10 , wherein, in the concentrated layer A, the thickness of a region in which the concentration of the metal R is 50 mol% or more is in a range from 0.005 to 1 μm.

12. The bonding structure of the bonding wire according to claim 10 , wherein the outermost layer of the outer skin layer contains either an alloy of palladium and silver or an alloy of palladium and gold as a major component thereof; and the concentrated layer A includes an alloy region comprised of either an alloy of palladium and silver or an alloy of palladium and gold, and another region containing palladium in a maximum concentration of 80 mol% or more.

13. The bonding structure of the bonding wire according to claim 10 , wherein the thickness of a region having an oxygen concentration of 10 mol% or more is in a range from 0 to 0.05 μm (excluding 0μm) extending above and below the initial boundary region of the bonding part between the bonding wire and the ball bump.

14. The bonding structure of the bonding wire according to claim 12 , wherein the thickness of the outer skin layer is in a range from 0.002 to 0.8 μm.

15. The bonding structure of the bonding wire according to claim 10 , wherein the outer skin layer has a monolayer structure.

Assignees

• Uno Tomohiro
• Yamada Takashi
• Ikeda Atsuo
• Nippon Steel & Sumikin Mat Co

Inventors

• Uno Tomohiro
• Yamada Takashi
• Ikeda Atsuo

Classifications

• H10W90/24

  at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape · CPC title

• H10W72/07555

  changes in materials · CPC title

• H10W72/07552

  changes in structures or sizes · CPC title

• H10W72/07541

  Controlling the environment, e.g. atmosphere composition or temperature · CPC title

• H10W72/07533

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title