Solar cell and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9324886-B2
Application number	US-62218509-A
Country	US
Kind code	B2
Filing date	Nov 19, 2009
Priority date	Nov 19, 2008
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate, at least one emitter layer on the substrate, at least one first electrode electrically connected to the at least one emitter layer, and at least one second electrode electrically connected to the substrate. At least one of the first electrode and the second electrode is formed using a plating method.

First claim

What is claimed is:

1. A solar cell, comprising:
a crystalline semiconductor substrate having a first type conductivity;
an emitter layer formed on a front surface of the crystalline semiconductor substrate,
wherein the emitter layer is formed of a material of a second type conductivity opposite of the first type conductivity, the material of the emitter layer is different from that of the crystalline semiconductor substrate, and the emitter layer forms a hetero junction as well as a p-n junction with the crystalline semiconductor substrate;
a first transparent conductive oxide layer positioned on the emitter layer;
a second transparent conductive oxide layer positioned on a rear surface of the crystalline semiconductor substrate;
a first electrode part positioned on the first transparent conductive oxide layer and electrically connected to the emitter layer through the first transparent conductive oxide layer, wherein the first electrode part includes a plurality of first electrodes spaced apart from one another in a first direction and a first electrode collector in a second direction crossing the first direction; and
a second electrode part positioned on the second transparent conductive oxide layer and electrically connected to the rear surface of the crystalline semiconductor substrate through the second transparent conductive oxide layer, wherein the second electrode part includes a plurality of second electrodes spaced apart from one another in the first direction and a second electrode collector in the second direction crossing the first direction,
wherein the first electrode part includes a first seed layer directly positioned on the first transparent conductive oxide layer, a first plated layer positioned on the first seed layer and electrically connected to the emitter layer through the first seed layer and the first transparent conductive oxide layer,
wherein the second electrode part includes a second seed layer directly positioned on the second transparent conductive oxide layer, a second plated layer positioned on the second seed layer and electrically connected to the crystalline semiconductor substrate through the second seed layer and the second transparent conductive oxide layer,
wherein the first electrode part and the second electrode part further include at least one of Ni, Cu, Ag, Al, Sn, Zn, In, Ti and Au,
wherein the first transparent conductive oxide layer and the first seed layer have different conductivities, and
wherein the second transparent conductive oxide layer and the second seed layer have different conductivities.

2. The solar cell of claim 1 , wherein a density of each of the first seed layer and the second seed layer is different from a density of each of the first plated layer and the second plated layer.

3. The solar cell of claim 2 , wherein the density of the first plated layer is greater than the density of the first seed layer, and
wherein the density of the second plated layer is greater than the density of the second seed layer.

4. The solar cell of claim 1 , wherein at least one of the plurality of first electrodes and the plurality of second electrodes has specific resistance of about 3.3×10 −6 Ωcm.

5. The solar cell of claim 1 , wherein at least one of the plurality of first electrodes and the plurality of second electrodes has a width of about 10 μm to 100 μm, and
wherein at least one of the plurality of first electrodes and the plurality of second electrodes has a height of about 10 μm to 20 μm.

6. The solar cell of claim 1 , wherein the emitter layer is formed of amorphous silicon.

7. A solar cell comprising:
a substrate formed of a first conductive type semiconductor;
an emitter layer formed on a rear surface of the substrate, wherein the emitter layer is formed of a material of a second conductive type semiconductor different from the first conductive type semiconductor, the material of the emitter layer is different from that of the substrate, and the emitter layer forms a hetero junction as well as a p-n junction with the substrate;
a plurality of first electrodes electrically connected to the emitter layer;
a back surface field layer formed on the rear surface of the substrate, wherein the back surface field layer is formed of the first type conductivity semiconductor more heavily doped than the substrate; and
a plurality of second electrodes electrically connected to the back surface field layer,
wherein the plurality of first electrodes include a first seed layer directly positioned on the emitter layer and a first plated layer positioned on the first seed layer,
wherein the plurality of second electrodes include a second seed layer directly positioned on the back surface field layer and a second plated layer positioned on the second seed layer,
wherein the substrate is formed of crystalline silicon and the emitter layer is made of amorphous silicon, and
wherein the back surface field layer is made of amorphous silicon.

8. The solar cell of claim 7 , wherein a density of the first plated layer is greater than a density of the first seed layer, and
wherein a density of the second plated layer is greater than a density of the second seed layer.

9. The solar cell of claim 7 , wherein the substrate has a conductive type opposite to a conductive type of the emitter layer.

10. The solar cell of claim 7 , wherein the rear surface of the substrate, on which the plurality of first electrodes and the plurality of second electrodes are positioned, is opposite to an incident surface of the substrate.

11. The solar cell of claim 7 , further comprising a passivation layer positioned on a front surface of the substrate, and
wherein the passivation layer includes silicon nitride and silicon dioxide.

12. The solar cell of claim 11 , further comprising an anti-reflection layer positioned on the passivation layer,
wherein the anti-reflection layer includes silicon nitride and silicon dioxide.

13. The solar cell of claim 1 , wherein the first electrode part and the second electrode part face each other.

14. The solar cell of claim 1 , wherein at least one of the front surface and the rear surface of the crystalline semiconductor substrate includes a textured surface.

15. The solar cell of claim 1 , wherein sides of the first electrode part and the second electrode part are substantially perpendicular relative to the front surface and the rear surface, respectively.

16. The solar cell of claim 1 , further comprising a back surface field layer positioned on the rear surface of the crystalline semiconductor substrate,
wherein the second electrode part is electrically connected to the crystalline semiconductor substrate through the back surface field layer, and
wherein the back surface field layer is formed of amorphous silicon.

17. The solar cell of claim 16 , wherein the first plated layer directly contacts a side surface of the first seed layer and the first transparent conductive oxide layer, and
wherein the second plated layer directly contacts a side surface of the second layer and the second transparent conductive oxide layer.

18. The solar cell of claim 17 , wherein the first and second transparent conductive oxide layers are formed of a material selected from the group consisting of indium tin oxide (ITO), tin-based oxide, SnO 2 , AgO, ZnO—Ga 2 O 3 , Al 2 O 3 , fluorine tin oxide (FTO), and a combination thereof.

19. The solar cell of claim 7 , wherein the first plated layer directly contacts a side surface of the first seed layer and the emitter layer, a

Assignees

• Kim Sunho
• Lee Heonmin
• Ji Kwangsun
• Eo Youngjoo
• Choi Junghoon
• Ahn Sehwon
• Lg Electronics Inc

Inventors

• Kim Sunho
• Lee Heonmin
• Ji Kwangsun
• Eo Youngjoo
• Choi Junghoon
• Ahn Sehwon

Classifications

• H05K2201/0326

  Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO] · CPC title

• H05K2201/0108

  Transparent · CPC title

• H05K3/246

  Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating · CPC title

• C25D7/126 Primary

  for solar cells · CPC title

• H05K3/188

  by direct electroplating · CPC title