Method of manufacturing printed circuit board
US-2024414849-A1 · Dec 12, 2024 · US
Electrode structure
US9320142B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9320142-B2 |
| Application number | US-201514598595-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 16, 2015 |
| Priority date | May 13, 2014 |
| Publication date | Apr 19, 2016 |
| Grant date | Apr 19, 2016 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
The present invention relates to an electrode structure which includes: a base substrate; a seed layer provided on one or both surfaces of the base substrate; an electroplating layer provided on the seed layer; and barriers discontinuously provided between the seed layer and the electroplating layer.
First claim
Opening claim text (preview).
What is claimed is: 1. An electrode structure comprising: a base substrate; a seed layer provided on one or both surfaces of the base substrate; an electroplating layer provided on the seed layer; and barriers discontinuously provided between the seed layer and the electroplating layer. 2. The electrode structure according to claim 1 , wherein the barriers are distributed in an island shape. 3. The electrode structure according to claim 1 , wherein the barriers have a higher etch resistance to a plating solution than the seed layer. 4. The electrode structure according to claim 1 , wherein the seed layer is made of Cu or Cu alloys, and the barriers are made of Ti, Cr, Ta, or alloys thereof. 5. The electrode structure according to claim 1 , further comprising: a bonding layer provided between the base substrate and the seed layer. 6. The electrode structure according to claim 5 , wherein the bonding layer is made of the same metal material as the barriers.
Assignees
Inventors
Classifications
- H05K3/188Primary
by direct electroplating · CPC title
Applying catalyst before applying plating resist · CPC title
Electroplating, e.g. finish plating · CPC title
by semi-additive methods; masks therefor (characterised by metallic etch mask H05K3/062; electroplating methods or apparatus H05K3/241) · CPC title
Discontinuous surface component · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9320142B2 cover?
- The present invention relates to an electrode structure which includes: a base substrate; a seed layer provided on one or both surfaces of the base substrate; an electroplating layer provided on the seed layer; and barriers discontinuously provided between the seed layer and the electroplating layer.
- Who is the assignee on this patent?
- Samsung Electro Mech
- What technology area does this patent fall under?
- Primary CPC classification H05K3/188. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).