Method to improve etch selectivity during silicon nitride spacer etch

Patent metadata

Field	Value
Publication number	US-9318343-B2
Application number	US-201414301698-A
Country	US
Kind code	B2
Filing date	Jun 11, 2014
Priority date	Jun 11, 2014
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

Techniques herein include methods to increase etching selectivity among materials. Techniques herein include a cyclical process of etching and oxidation of a silicon nitride (SiN) spacer and silicon (such as polycrystalline silicon). This technique can increase selectivity to the silicon so that silicon is less likely to be etched or damaged while silicon nitride is etched from sidewalls. Techniques and chemistries as disclosed herein can be more selective to silicon oxide and silicon as compared to silicon nitride. An oxidizing step creates an oxide protection film on silicon surfaces that is comparatively thicker to any oxide film formed on nitride surfaces. As such, techniques here enable better removal of silicon nitride and silicon nitride spacer materials.

First claim

The invention claimed is:

1. A method of etching features on a substrate, the method comprising:
positioning a substrate on a substrate holder in a plasma processing chamber, the substrate having a silicon nitride film covering structures on the substrate;
flowing a first process gas mixture into the plasma processing system, the first process gas mixture comprising a halogen-containing gas;
flowing a second process gas mixture into the plasma processing system, the second process gas mixture comprising an oxygen-containing gas;
maintain plasma using the first process gas mixture and the second process gas mixture;
repeatedly varying a flow rate of the first process gas mixture or repeatedly varying a flow rate of the second process gas mixture such that a gas flow ratio of the halogen-containing gas to the oxygen-containing gas fluctuates repeatedly between a first gas ratio and a second gas ratio; and
anisotropically directing products of the plasma toward the substrate.

2. The method of claim 1 , wherein the halogen-containing gas comprises a hydrofluorocarbon.

3. The method of claim 2 , wherein the hydrofluorocarbon gas is expressed as CxHyFz, wherein x, y, and z are non-zero.

4. The method of claim 3 , wherein the hydrofluorocarbon gas is CH3F.

5. The method of claim 1 , wherein the oxygen-containing gas comprises O2.

6. The method of claim 1 , further comprising flowing a carrier gas into the plasma processing system.

7. The method of claim 6 , wherein the carrier gas is argon or helium.

8. The method of claim 1 , wherein repeatedly varying the flow rate of the first or second process gas mixture includes repeatedly fluctuating between an etch period in which an sccm (standard cubic centimeters per minute) value of halogen-containing gas flow is greater than an sccm value of oxygen-containing gas flow, and an oxidation period in which the sccm value of halogen-containing gas flow is approximately equal to the sccm value of oxygen-containing gas flow.

9. The method of claim 8 , wherein the sccm value of oxygen-containing gas flow during the oxidation period is sufficient to cause a layer of SiOF to form on exposed silicon surfaces.

10. The method of claim 8 , wherein the oxidation period is of sufficient duration to form an SiOF layer, on exposed silicon surfaces, having a thickness sufficient to protect silicon surfaces during the etch period, and wherein the oxidation period is less than a particular duration that forms an SiOF layer, on exposed silicon nitride surfaces, having a thickness sufficient to protect nitride surfaces during the etch period.

11. The method of claim 8 , wherein the etch period is at least three times greater than the oxidation period.

12. The method of claim 1 , wherein the flow rate is varied such that a resultant etch selectivity of nitride to silicon is greater than 11:1.

13. The method of claim 1 , wherein varying the gas flow ratio includes having a ratio value that fluctuates between approximately 1.5:1 and 1:1.

14. The method of claim 1 , wherein the structures include structures of differing heights relative to each other.

15. The method of claim 14 , wherein the structures include gate structures and fin structures of a FinFET structure.

16. The method of claim 15 , wherein silicon nitride conformally covers gate structures and fin structures.

17. The method of claim 15 , wherein anisotropically directing products of the plasma toward the substrate continues until removing silicon nitride from sidewalls of fin structures, while leaving silicon nitride on at least a portion of gate sidewall structures.

18. A method of etching features on a substrate, the method comprising:
positioning a substrate on a substrate holder in a plasma processing chamber, the substrate having a silicon nitride film conformally covering structures on the substrate, the structures including gate structures and fin structures of a FinFET structure;
flowing a first process gas mixture into the plasma processing system, the first process gas mixture comprising a hydrofluorocarbon gas;
flowing a second process gas mixture into the plasma processing system, the second process gas mixture comprising an oxygen-containing gas;
forming plasma from the first process gas mixture and the second process gas mixture;
repeatedly varying a flow rate of the first process gas mixture or repeatedly varying a flow rate of the second process gas mixture such that a gas flow ratio of the hydrofluorocarbon gas to the oxygen-containing gas repeatedly fluctuates between a first gas ratio defining an etch period and a second gas ratio defining an oxidation period and having a greater proportion of oxygen-containing gas as compared to the etch period such that a protection layer of SiOF forms on exposed silicon surfaces during the oxidation period and etching of silicon nitride occurs during the etch period, wherein the etch period has a duration that is at least three times greater than a duration of the oxidation period; and
anisotropically directing products of the plasma toward the substrate at least until silicon nitride is removed from fin structures.

19. A method of etching features on a substrate, the method comprising:
positioning a substrate in a plasma processing chamber, the substrate having a silicon nitride film conformally covering structures on the substrate, the structures including gate structures and fin structures of a FinFET structure;
establishing a plasma in the plasma processing chamber from a gas mixture of a hydrofluorocarbon gas and an oxygen-containing gas; and
performing a cyclic anisotropic etch using the plasma to achieve a target level of removal of the silicon nitride film from the fin structures and from a portion of the gate structures while leaving the silicon nitride film on at least a portion of the sidewalls of the gate structures to form sidewall spacers, wherein the cyclic anisotropic etch comprises repeatedly cycling between an etching step a) and an oxidation step b) until step a) achieves the target level of removal, wherein the etching step a) and the oxidation step b) comprise, respectively:
a) for a first duration, flowing the hydrofluorocarbon gas and the oxygen-containing gas into the plasma processing system at respective first flow rates to provide a first gas flow ratio of the hydrofluorocarbon gas to the oxygen-containing gas that is greater than 1:1 and that is sufficient to etch the silicon nitride with greater etch selectivity to silicon nitride than to silicon; and
b) for a second duration less than the first duration, flowing the hydrofluorocarbon gas and the oxygen-containing gas into the plasma processing system at respective second flow rates to provide a second gas flow ratio of the hydrofluorocarbon gas to the oxygen-containing gas that is less than the first gas flow ratio to form a protection layer of SiOF on exposed silicon surfaces at a thickness greater than a thickness of SiOF that forms on silicon nitride to protect the exposed silicon surfaces from etching during the next cycle of etching step a).

20. The method of claim 19 , wherein the second duration is one-third to one-tenth of the first duration.

21. The method of claim 20 , wherein the first gas flow ratio is approximately 1.5:1 and the second gas flow ratio is approximately 1:1.

Assignees

• Tokyo Electron Ltd

Inventors

• Ranjan Alok
• Parkinson Blake

Classifications

• H10P14/6529

  by exposure to a gas or vapour · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D64/021

  using multiple gate spacer layers, e.g. bilayered sidewall spacers · CPC title