Junctionless semiconductor light emitting devices

Patent metadata

Field	Value
Publication number	US-9793685-B2
Application number	US-201214117560-A
Country	US
Kind code	B2
Filing date	May 24, 2012
Priority date	May 24, 2011
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

A junctionless light emitting device comprises a field emitter cathode, and a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact.

First claim

The invention claimed is:

1. A junctionless light emitting device comprising:
a field emitter cathode that generates injection electrons; and
a light emitting semiconductor material sandwiched between a floating ohmic contact (OC) and a Schottky contact (SC), an interface between the Schottky contact and the light emitting semiconductor material forming a Schottky junction;
wherein the ohmic contact receives injection of the injection electrons from the field emitter cathode; and
contacts for applying a voltage bias across the Schottky contact and the field emitter cathode to induce hole injection from the Schottky contact as a result of the injection electrons increasing a voltage drop between the ohmic contact and the Schottky contact and reducing a Schottky barrier of the Schottky junction.

2. The device of claim 1 , wherein the light emitting semiconductor material consists of one of a thin film and nanostructures in contact with the Schottky contact to form the Schottky junction.

3. The device of claim 1 , wherein the ohmic contact is separated from the field emitter cathode by an injection barrier.

4. The device of claim 3 , wherein the injection barrier comprises a vacuum.

5. The device of claim 4 , further comprising:
a vacuum enclosure housing at least the field emitter cathode, the light emitting semiconductor material, the ohmic contact (OC), and the Schottky contact (SC).

6. The device of claim 1
wherein the ohmic contact is separated from the field emitter cathode by an injection barrier;
wherein the injection barrier comprises a solid state dielectric material.

7. The device of claim 1 , further comprising:
a light transmissive substrate, wherein the light emitting semiconductor material, the ohmic contact (OC), and the Schottky contact (SC) are disposed on the light transmissive substrate to provide a light emitting anode.

8. The device of claim 7 , wherein the Schottky contact comprises a thin film grid disposed on the light transmissive substrate.

9. The device of claim 7 , further comprising:
a phosphor coating disposed on the light transmissive substrate.

10. The device of claim 9 , wherein the light emitting semiconductor material is configured to emit ultraviolet (UV) light.

11. The device of claim 9 , wherein the phosphor coating provides color tuning for the device.

12. The device of claim 9 ,
wherein the phosphor coating comprises a plurality of phosphors mixed such that the device emits substantially white light.

13. A junctionless light emitting device comprising:
a field emitter cathode; and
a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC);
wherein the field emitter cathode is configured to inject electrons into the ohmic contact, and
wherein the light emitting semiconductor material comprises nanowires.

14. The device of claim 13 , wherein the nanowires comprise an array of nanowires.

15. The device of claim 13 , wherein the ohmic contact comprises a metal film disposed on tips of the nanowires.

16. The device of claim 13 , wherein the light emitting semiconductor material comprises nanowires;
wherein the nanowires comprise nanowires having a plurality of different bandgaps to thereby emit photons of different wavelengths.

17. The device of claim 16 , wherein the emitted photons from the nanowires are mixed to provide substantially white light.

18. The device of claim 1 , wherein the field emitter cathode comprises nanowires.

19. A method of operating a device of claim 3 , comprising:
applying a voltage differential across the field emitter cathode and the SC to create small voltage drop between the floated OC and the SC, an electric field across the light emitting semiconductor material, the voltage drop being sufficiently small to limit injection of holes into the light emitting semiconductor material from the SC; and
emitting electrons from the field-emitting cathode and injecting the electrons into the floated OC;
increasing the voltage drop between the floating OC and the SC across the light emitting semiconductor material as a result of the injecting the electrodes to lower the Schottky barrier;
injecting holes into the light emitting semiconductor material from the SC as a result of the injecting holes;
recombining the injected holes from the SC and the injected electrons from the OC in the light emitting semiconductor material;
emitting photons from the light emitting semiconductor material as result of the recombining.

Assignees

• Wang Deli
• Yang Muchuan
• Li Chun
• Univ California

Inventors

• Wang Deli
• Yang Muchuan
• Li Chun

Classifications

• H01S5/3401 Primary

  having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers · CPC title

• H01J63/06

  Lamps with luminescent screen excited by the ray or stream · CPC title

• H01L33/0004

  Electricity · mapped topic

• H10H20/00 Primary

  Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED] · CPC title