Apparatus and method for manufacturing an integrated circuit

Patent metadata

Field	Value
Publication number	US-9305821-B2
Application number	US-201414222888-A
Country	US
Kind code	B2
Filing date	Mar 24, 2014
Priority date	Mar 27, 2009
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

An apparatus for manufacturing an integrated circuit having a thick film metal layer includes an applicator configured to selectively apply a paste on a heat-conducting substrate. The paste includes particles of a first metal constituent of particles having sizes substantially within a narrow predetermined range about a predetermined size. The apparatus further includes a radio frequency (RF) generator to selectively inductively coupling RF energy into the paste. The first metal particles of the predetermined size are inductively couplable with the RF energy, and the frequency of the RF energy corresponds to a coupling frequency of the first metal particles of the predetermined size so that the inductive heating of the first metal particles is substantially maximized.

First claim

The invention claimed is:

1. An integrated circuit manufacturing apparatus having a thick film metal layer comprising:
an applicator configured to selectively apply a paste on a heat-conducting substrate, the paste comprising particles of a metal constituent having sizes within a single predetermined range about a single predetermined size;
a radio frequency (RF) generator to selectively inductively coupling RF energy into the paste, wherein the metal particles of the single predetermined size range are inductively coupled with the RF energy, wherein a frequency of the RF energy corresponds to a coupling frequency of the metal particles of the single predetermined size range so that the inductive heating of the metal particles is maximized; and
a substrate heater to pre-heat the substrate, wherein the substrate heater directly contacts the substrate.

2. The apparatus of claim 1 , wherein the substrate has a higher heat capacity than the paste comprising the metal particles.

3. The apparatus of claim 1 , wherein the substrate comprises a semi-conductive material comprising at least one of silicon, gallium-arsenide, germanium, indium-tellurium compounds and copper-indium-gallium-sulfur compounds.

4. The apparatus of claim 1 , wherein the substrate is a heat sink for rapidly cooling the paste containing the metal particles.

5. The apparatus of claim 1 , wherein the metal particles comprise at least one of silver, aluminum, copper stainless steel or a combination thereof.

6. The apparatus of claim 1 , wherein the coupling frequency is in the range from 2 to 200 MHz.

7. The apparatus of claim 1 , wherein the metal particles in the paste are sized in the range from 5 to 50 μm, so as to be inductively couplable with the RF energy.

8. The apparatus of claim 1 , wherein the single predetermined range of particle size of the metal particles is within a range of 1 to 6 times a penetration depth of the RF energy in a material of the metal particles.

9. The apparatus of claim 1 , comprising a substrate table to move the substrate having the paste under the RF generator at a predetermined rate, wherein the RF energy is distributed in a predetermined manner.

10. The apparatus of claim 9 , wherein the predetermined rate is constant and wherein the predetermined manner is variable and linked to the substrate position.

11. The apparatus of claim 9 , wherein the predetermined rate is variable and wherein the predetermined manner is constant.

12. The apparatus of claim 1 , wherein conduction properties of the substrate are dependent on temperature.

13. The apparatus of claim 12 , wherein the substrate heater is configured to pre-heat the substrate above 400° C.

14. The apparatus of claim 12 , wherein the substrate material has a critical temperature below which the substrate is not inductively heated by the radio frequency (RF) for inductively heating the metal particles and above which the substrate is inductively heated by the radio frequency (RF) for inductively heating the metal particles to increase the temperature of the substrate during the inductive heating of the metal particles, the temperature increase of the metal particles being more than the temperature increase of the substrate during the inductive heating, and wherein the preheating heats the substrate above the critical temperature.

15. The apparatus of claim 1 , wherein the applicator is configured to apply the paste onto the substrate with a predetermined three-dimensional geometry, wherein the temperature of the inductively-coupled metal particles of the paste is dependent on the geometry.

16. The apparatus of claim 1 , wherein the coupling frequency is 27 MHz.

17. The apparatus of claim 1 , wherein the single predetermined size of the particles of the metal constituent of the paste is selected to maximize the inductive heating of the particles.

18. The apparatus of claim 1 , wherein the single predetermined size is 12 μm.

19. The apparatus of claim 18 , wherein the single predetermined range is from 6 to 18 μm.

20. The apparatus of claim 1 , wherein the single predetermined range is from 6 to 43 μm.

21. The apparatus of claim 1 , comprising a substrate table to move the heat-conducting substrate having the paste under the RF generator, wherein the RF generator is controlled by signals indicating a position of the heat-conducting substrate.

22. The apparatus of claim 1 , wherein the paste has a geometry including different portions having different thickness of the metal particles for heating the different portions by the RF energy by different amounts depending on the geometry.

23. The apparatus of claim 1 , wherein the RF generator is controlled to provide different powers of the RF energy for achieving different temperatures at different portions of the paste.

Assignees

• Koninkl Philips Nv

Inventors

• De Wijs Willem-Jan A
• Van De Sande Marcus Johannes

Classifications

• H10D84/01

  Manufacture or treatment · CPC title

• H10F77/211

  for photovoltaic cells · CPC title

• H10F71/137

  Batch treatment of the devices · CPC title

• H10F71/128

  Annealing · CPC title

• H10F19/906

  characterised by the materials of the structures · CPC title