Mixed abrasive tungsten CMP composition

Patent metadata

Field	Value
Publication number	US-9303190-B2
Application number	US-201414222736-A
Country	US
Kind code	B2
Filing date	Mar 24, 2014
Priority date	Mar 24, 2014
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

First claim

What is claimed is:

1. A chemical mechanical polishing composition comprising:
a water based liquid carrier;
a first colloidal silica abrasive dispersed in the liquid carrier, the first colloidal silica abrasive having a permanent positive charge of at least 10 mV;
a second colloidal silica abrasive dispersed in the liquid carrier, the second colloidal silica abrasive having a permanent positive charge of at least 10 mV; and
an iron containing accelerator;
wherein an average particle size of the second colloidal silica abrasive is at least 20 nanometers greater than an average particle size of the first colloidal silica abrasive, and wherein the first colloidal silica abrasive and the second colloidal silica abrasive comprise colloidal silicas in which 50 percent or more of the colloidal silica abrasive particles include two or more aggregated primary particles.

2. The composition of claim 1 , wherein each of the first colloidal silica abrasive and the second colloidal silica abrasive have a permanent positive charge of at least 20 mV.

3. The composition of claim 1 , wherein each of the first colloidal silica abrasive and the second colloidal silica abrasive is treated with an aminosilane compound.

4. The composition of claim 3 , wherein the aminosilane compound is a propyl group containing aminosilane.

5. The composition of claim 3 , wherein the aminosilane compound is selected from the group consisting of such as bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, bis(trialkoxysilylpropyl)amine, and mixtures thereof.

6. The composition of claim 1 , wherein:
the average particle size of the first colloidal silica abrasive is in a range from about 20 to about 110 nanometers; and
the average particle size of the second colloidal silica abrasive is in a range from about 90 to about 180 nanometers.

7. The composition of claim 1 , having a pH in a range from about 1.5 to about 5.

8. The composition of claim 1 , wherein the iron containing accelerator comprises a soluble iron containing catalyst and the composition further comprises a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of acetic acid, phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof.

9. The composition of claim 1 , further comprising a hydrogen peroxide oxidizer.

10. The composition of claim 1 , further comprising a tungsten etching inhibitor including an amine containing compound.

11. The method of claim 1 , wherein the iron containing accelerator comprises a soluble iron containing catalyst and the polishing composition further comprises a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of acetic acid, phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof.

12. The method of claim 1 , wherein the polishing composition further comprises a hydrogen peroxide oxidizer.

13. The method of claim 1 , wherein the polishing composition further comprises a tungsten etching inhibitor including an amine containing compound.

14. A method of chemical mechanical polishing a substrate including a tungsten layer, the method comprising:
(a) contacting the substrate with a polishing composition comprising:
(i) a water based liquid carrier;
(ii) a first colloidal silica abrasive dispersed in the liquid carrier, the first colloidal silica abrasive having a permanent positive charge of at least 10 mV;
(iii) a second colloidal silica abrasive dispersed in the liquid carrier, the second colloidal silica abrasive having a permanent positive charge of at least 10 mV; and
(iv) an iron containing accelerator;
wherein an average particle size of the second colloidal silica abrasive is at least 20 nanometers greater than an average particle size of the first colloidal silica abrasive, wherein the first colloidal silica abrasive and the second colloidal silica abrasive comprise colloidal silicas in which 50 percent or more of the colloidal silica abrasive particles include two or more aggregated primary particles;
(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

15. The method of claim 14 , wherein each of the first colloidal silica abrasive and the second colloidal silica abrasive is treated with a propyl group containing aminosilane compound.

16. The method of claim 14 , wherein:
the average particle size of the first colloidal silica abrasive is in a range from about 20 to about 110 nanometers; and
the average particle size of the second colloidal silica abrasive is in a range from about 90 to about 180 nanometers.

17. The method of claim 14 , wherein the polishing composition has a pH in a range from about 1.5 to about 5.

Assignees

• Cabot Microelectronics Corp

Inventors

• Ward William
• Whitener Glenn
• Grumbine Steven
• Dysard Jeffrey

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09G1/04 Primary

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/3212

  Electricity · mapped topic