Method of treating wiring substrate and wiring substrate manufactured by the same

Patent metadata

Field	Value
Publication number	US-9301399-B2
Application number	US-201414256252-A
Country	US
Kind code	B2
Filing date	Apr 18, 2014
Priority date	Apr 23, 2013
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

A method of treating a wiring substrate according to an embodiment includes, in a semi-additive process:
(1) contacting the wiring substrate with a pre-etching treatment liquid composition containing a chloride ion, the wiring substrate containing a seed layer formed of an electroless copper and a wiring pattern formed of an electrolytic copper; and (2) continuously, etching the wiring substrate with an etching liquid composition containing a hydrogen peroxide, a sulfuric acid, a tetrazole, a chloride ion, a copper ion and a water.

First claim

The invention claimed is:

1. A method of treating a wiring substrate in a semi-additive process, the method comprising:
(1) contacting the wiring substrate with a pre-etching treatment liquid composition containing (a) a chloride ion and (b) a water, the wiring substrate containing a seed layer formed of an electroless copper and a wiring pattern formed of an electrolytic copper; and
(2) continuously, etching the wiring substrate with an etching liquid composition containing (c) a hydrogen peroxide, (d) a sulfuric acid, (e) a tetrazole, (f) a chloride ion, (g) a copper ion and (h) a water.

2. The method according to claim 1 , wherein the (a) chloride ion is contained in the pre-etching treatment liquid composition at a concentration of 1 to 10 ppm.

3. The method according to claim 1 , wherein the (a) chloride ion is generated from at least one compound selected from sodium chloride, ammonium chloride, potassium chloride and hydrochloric acid.

4. The method according to claim 1 , wherein in the step (2) in which the wiring substrate is treated with the etching liquid composition, a ratio (ERN/ERE) of an etching rate of the electroless copper (ERN) to an etching rate of the electrolytic copper (ERE) is 2.1 to 50.

5. The method according to claim 1 , wherein a difference between a mixed potential of the electroless copper which forms the seed layer and a mixed potential of the electrolytic copper which forms the wiring pattern is 10 to 200 mV.

6. The method according to claim 1 , wherein the (e) tetrazole is at least one compound selected from 1-methyltetrazole, 5-ethyl-1-methyltetrazole, 1-ethyl-5-methyltetrazole, 1,5-diethyltetrazole, 1-isopropyl-5-methyltetrazole, and 1,5-dimethyltetrazole.

7. A method of treating a wiring substrate in a semi-additive process, comprising:
(1) contacting the wiring substrate with a pre-etching treatment liquid composition containing (i) a chloride ion, (j) a sulfuric acid and (k) a water, the wiring substrate containing a seed layer formed of an electroless copper and a wiring pattern formed of an electrolytic copper; and
(2) continuously, etching the wiring substrate with an etching liquid composition containing (l) a hydrogen peroxide, (m) a sulfuric acid, (n) a tetrazole, (p) a chloride ion, (q) a copper ion and (r) a water.

8. The method according to claim 7 , wherein in the pre-etching treatment liquid composition, the (i) chloride ion is contained at a concentration of 0.01 to 3 ppm and the (m) sulfuric acid is contained at a concentration of 1 to 20% by mass.

9. The method according to claim 7 , wherein the (i) chloride ion is generated from at least one compound selected from sodium chloride, ammonium chloride, potassium chloride and hydrochloric acid.

10. The method according to claim 7 , wherein in the step (2) in which the wiring substrate is treated with the etching liquid composition, a ratio (ERN/ERE) of an etching rate of the electroless copper (ERN) to an etching rate of the electrolytic copper (ERE) is 2.1 to 50.

11. The method according to claim 7 , wherein a difference between a mixed potential of the electroless copper which forms the seed layer and a mixed potential of the electrolytic copper which forms the wiring pattern is 10 to 200 mV.

12. The method according to claim 7 , wherein the (n) tetrazole is at least one compound selected from 1-methyltetrazole, 5-ethyl-1-methyltetrazole, 1-ethyl-5-methyltetrazole, 1,5-diethyltetrazole, 1-isopropyl-5-methyltetrazole, and 1,5-dimethyltetrazole.

13. A method of manufacturing a wiring substrate, comprising the method of treating the wiring substrate according to claim 1 .

14. A method of manufacturing a wiring substrate, comprising the method of treating the wiring substrate according to claim 7 .

Assignees

• Mitsubishi Gas Chemical Co
• Ryoko Chemical Co Ltd

Inventors

• Suzuki Tomoko
• Tashiro Norihumi
• Naito Yukihide
• Hitotsugo Akari

Classifications

• H10P50/667

  by liquid etching only · CPC title

• C23C22/52

  Treatment of copper or alloys based thereon · CPC title

• C09K13/04

  containing an inorganic acid · CPC title

• C23G1/103

  copper or alloys of copper · CPC title

• H05K3/108 Primary

  by semi-additive methods; masks therefor (characterised by metallic etch mask H05K3/062; electroplating methods or apparatus H05K3/241) · CPC title