Solid state imaging device including photoelectric conversion portion

Patent metadata

Field	Value
Publication number	US-9299860-B2
Application number	US-201113977976-A
Country	US
Kind code	B2
Filing date	Nov 11, 2011
Priority date	Jan 14, 2011
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13 , and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13 . A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.

First claim

The invention claimed is:

1. A solid state imaging device comprising:
a photoelectric conversion portion having a plurality of photosensitive regions which generate respective charges according to incidence of light and a planar shape of each of which is a substantially rectangular shape composed of two long sides and two short sides, the photosensitive regions being juxtaposed in a first direction intersecting with the long sides;
a potential gradient forming portion which is arranged opposite to the plurality of photosensitive regions and which forms a potential gradient along a second direction from one of the short sides to the other of the short sides;
a first charge output portion which is arranged beside the one short side and which transfers charges transferred from the respective photosensitive regions, in the first direction and outputs the charges;
a second charge output portion which is arranged beside the other short side and which transfers charges transferred from the respective photosensitive regions, in the first direction and outputs the charges;
a first charge drain portion which is arranged beside the one short side and which drains charges transferred from the respective photosensitive regions; and
a second charge drain portion which is arranged beside the other short side and which drains charges transferred from the respective photosensitive regions,
wherein the potential gradient forming portion has a first potential gradient forming region to form a potential gradient becoming lower along the second direction, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction, the second potential gradient forming region being arranged next to the first potential gradient forming region in the second direction.

2. The solid state imaging device according to claim 1 ,
wherein the first charge drain portion and the second charge drain portion are arranged corresponding to each one of the photosensitive regions.

3. The solid state imaging device according to claim 1 ,
wherein the first charge drain portion and the second charge drain portion are arranged corresponding to each set of two said photosensitive regions adjacent in the first direction.

4. The solid state imaging device according to claim 3 ,
wherein the first charge drain portions and the second charge drain portions are alternated along the first direction.

5. The solid state imaging device according to claim 1 , further comprising:
an adding portion which adds the charge output from the second charge output portion to the charge output from the first charge output portion.

6. The solid state imaging device according to claim 1 , further comprising:
a first charge accumulation portion which is arranged beside the one short side and which accumulates charges transferred from the respective photosensitive regions; and
a second charge accumulation portion which is arranged beside the other short side and which accumulates charges transferred from the respective photosensitive regions,
wherein the first charge output portion transfers charges transferred from the first charge accumulation portion, in the first direction and outputs the charges, and the first charge drain portion drains charges transferred from the first charge accumulation portion, and
wherein the second charge output portion transfers charges transferred from the second charge accumulation portion, in the first direction and outputs the charges, and the second charge drain portion drains charges transferred from the second charge accumulation portion.

7. The solid state imaging device according to claim 1 ,
wherein the potential gradient forming portion has an electroconductive member arranged opposite to the plurality of photosensitive regions, a pair of electrodes connected to two end areas in the second direction of the electroconductive member, and an electrode connected to the electroconductive member between the two end areas.

8. The solid state imaging device according to claim 1 , said solid state imaging device being a back illuminated type.

Assignees

• IKEYA Tomohiro
• Yoneta Yasuhito
• Suzuki Hisanori
• Muramatsu Masaharu
• Hamamatsu Photonics Kk

Inventors

• IKEYA Tomohiro
• Yoneta Yasuhito
• Suzuki Hisanori
• Muramatsu Masaharu

Classifications

• H10F39/158

  having arrangements for blooming suppression · CPC title

• H10F39/153

  Two-dimensional or three-dimensional array CCD image sensors · CPC title

• H10F39/152

  One-dimensional array CCD image sensors · CPC title

• H10F39/80 Primary

  Constructional details of image sensors · CPC title

• H10F77/00 Primary

  Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title