Accumulation-mode MOSFET and driving method thereof

Patent metadata

Field	Value
Publication number	US-9299844-B2
Application number	US-201514636817-A
Country	US
Kind code	B2
Filing date	Mar 3, 2015
Priority date	Oct 25, 2012
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

There is provided an accumulation-mode MOSFET. The accumulation-mode MOSFET has a tunnel electron emission portion and a thermionic emission portion which are provided in a source region portion.

First claim

What is claimed is:

1. An accumulation-mode MOSFET comprising:
a semiconductor region where a channel region is formed;
a gate electrode and a gate insulating film for forming the channel region;
a source region portion for injecting carriers; and
a drain region for ejecting carriers, wherein
a tunnel electron emission portion which emits an electronic tunnel current flowing the channel region through tunneling and a thermionic emission portion which emits an accumulation region current flowing the channel region through thermionic emission are provided in the source region portion.

2. The accumulation-mode MOSFET according to claim 1 , wherein said tunnel electron emission portion and said thermionic emission portion form a two-layered structure.

3. A method of driving an accumulation-mode MOSFET comprising
a semiconductor region where a channel region is formed;
a gate electrode and a gate insulating film for forming the channel region;
a source region portion for injecting carriers; and
a drain region portion for ejecting carriers, the method comprising:
driving the accumulation-mode MOSFET by an electronic tunnel current emitted by a tunnel electron emission portion when transiting from an OFF state to an ON state until a gate voltage applied to the gate electrode reaches a power supply voltage, and driving the accumulation-mode MOSFET by an accumulation region current emitted by a thermionic emission portion in the ON state where the gate voltage applied to the gate electrode is the power supply voltage, wherein
the tunnel electron emission portion which emits the electronic tunnel current flowing the channel region through tunneling and the thermionic emission portion which emits the accumulation region current flowing the channel region through thermionic emission are provided in the source region portion of the accumulation-mode MOSFET.

4. The method of driving the accumulation-mode MOSFET according to claim 3 , wherein there exists a region where a gate voltage necessary for increasing a drain current by an order of magnitude when transiting from the OFF state to the ON state is smaller than 60 mV at least at room temperature.

Assignees

• Teramoto Akinobu
• Univ Tohoku

Inventors

• Teramoto Akinobu

Classifications

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title

• H10D48/362 Primary

  Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT] · CPC title

• H10D30/6218

  of the accumulation type · CPC title

• H10D62/165

  Tunnel injectors · CPC title

• H10D30/62 Primary

  Fin field-effect transistors [FinFET] · CPC title