Method of manufacturing EUV photo masks
US-12085843-B2 · Sep 10, 2024 · US
Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
US9298083B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9298083-B2 |
| Application number | US-201414279577-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 16, 2014 |
| Priority date | Aug 17, 2010 |
| Publication date | Mar 29, 2016 |
| Grant date | Mar 29, 2016 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An extreme ultraviolet photomask comprises a reflective layer over a substrate, a capping layer over the reflective layer, a hard mask layer over the capping layer, and an absorber. The absorber is in the hard mask layer, the capping layer and the reflective layer.
First claim
Opening claim text (preview).
What is claimed is: 1. An extreme ultraviolet photomask, comprising: a reflective layer over a substrate; a capping layer over the reflective layer; a hard mask layer over the capping layer; and an absorber in the hard mask layer, the capping layer and the reflective layer. 2. The extreme ultraviolet photomask of claim 1 , wherein the absorber is substantially co-planar with the top surface of the hard mask layer. 3. The extreme ultraviolet photomask of claim 1 , wherein the hard mask layer comprises ruthenium (Ru), RuSi, or a combination thereof. 4. The extreme ultraviolet photomask of claim 1 , wherein the capping layer comprises silicon (Si). 5. The extreme ultraviolet photomask of claim 1 , wherein the absorber comprises TaSi, TaBN, TaN, TaSiON, TaBO, or TaON. 6. The extreme ultraviolet photomask of claim 1 , wherein the reflective layer comprises a molybdenum and silicon (Mo/Si) containing layer. 7. The extreme ultraviolet photomask of claim 1 , wherein the reflective layer comprises alternating Mo and Si layers ranging between about 40 pairs and about 50 pairs. 8. An extreme ultraviolet photomask, comprising: a reflective layer over a substrate, the reflective layer having a first thickness; a capping layer over the reflective layer; a hard mask layer over the capping layer; and an absorber layer in and over a top surface of the hard mask layer, the absorber layer having a second thickness greater than the first thickness. 9. The extreme ultraviolet photomask of claim 8 , wherein the absorber layer is substantially co-planar with the top surface of the hard mask layer. 10. The extreme ultraviolet photomask of claim 8 , wherein the hard mask layer comprises ruthenium (Ru), RuSi, or a combination thereof. 11. The extreme ultraviolet photomask of claim 8 , wherein the capping layer comprises silicon (Si). 12. The extreme ultraviolet photomask of claim 8 , wherein the absorber layer comprises TaSi, TaBN, TaN, TaSiON, TaBO, or TaON. 13. The extreme ultraviolet photomask of claim 8 , wherein the reflective layer comprises a molybdenum and silicon (Mo/Si) containing layer. 14. The extreme ultraviolet photomask of claim 8 , wherein the reflective layer comprises alternating Mo and Si layers ranging between about 40 pairs and about 50 pairs. 15. An extreme ultraviolet photomask comprising: a reflective layer over a substrate, the reflective layer having a first thickness and comprising alternating first layers and second layers, the first layers each being thicker than the second layers; a capping layer over the reflective layer; a hard mask layer over the capping layer; and an absorber layer in and over a top surface of the hard mask layer, the absorber layer having a second thickness greater than the first thickness. 16. The extreme ultraviolet photomask of claim 15 , wherein the absorber layer is substantially co-planar with the top surface of the hard mask layer. 17. The extreme ultraviolet photomask of claim 15 , wherein the hard mask layer comprises ruthenium (Ru), RuSi, or a combination thereof. 18. The extreme ultraviolet photomask of claim 15 , wherein the capping layer comprises silicon (Si). 19. The extreme ultraviolet photomask of claim 15 , wherein the absorber layer comprises TaSi, TaBN, TaN, TaSiON, TaBO, or TaON. 20. The extreme ultraviolet photomask of claim 15 , wherein the alternating first layers and second layers of the reflective layer are alternating Mo and Si layers ranging between about 40 pairs and about 50 pairs.
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9298083B2 cover?
- An extreme ultraviolet photomask comprises a reflective layer over a substrate, a capping layer over the reflective layer, a hard mask layer over the capping layer, and an absorber. The absorber is in the hard mask layer, the capping layer and the reflective layer.
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification G03F1/24. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).