Method for evaluating modulus of repulsion elasticity, hardness and energy loss of polymer material
US-9528950-B2 · Dec 27, 2016 · US
US9297772B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9297772-B2 |
| Application number | US-201414246702-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 7, 2014 |
| Priority date | Jul 30, 2013 |
| Publication date | Mar 29, 2016 |
| Grant date | Mar 29, 2016 |
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The disclosure provides an apparatus for amplifying scattering intensity during tSAXS measurements. The apparatus includes an enhancement grating object and a placement mechanism. The enhancement grating object is positioned within a longitudinal coherence length of an incident X-ray from a target object. The placement mechanism is capable of placing the enhancement grating object with nanometer precision with respect to the target object in both a lateral and a longitudinal directions.
Opening claim text (preview).
What is claimed is: 1. An apparatus for amplifying scattering intensity during transmission small-angle X-ray scattering (tSAXS) measurements, comprising: an enhancement grating object positioned within a longitudinal coherence length of an incident X-ray from a target object, wherein the enhancement grating object is configured to enhance X-ray scattering intensity from the target object; and a placement mechanism configured to place the enhancement grating object with nanometer precision with respect to the target object in both a lateral and a longitudinal directions. 2. The apparatus according to claim 1 , wherein the enhancement grating object is positioned either at a front of the target object or at a back of the target object. 3. The apparatus according to claim 1 , wherein a pattern part of the enhancement grating object faces a pattern part of the target object. 4. The apparatus according to claim 1 , wherein the enhancement grating object is made of a material the same as or different from the target object. 5. The apparatus according to claim 1 , wherein a height of a pattern part of the enhancement grating object is larger than a height of a pattern part of the target object by a factor greater than unity. 6. The apparatus according to claim 1 , wherein a pitch of a pattern part of the enhancement grating object is α times larger than a pitch of a pattern part of the target object, or 1/α of a height of the pattern part of the target object, where α is an integer greater than or equal to unity. 7. The apparatus according to claim 1 , wherein a pattern part of the enhancement grating object is made of materials with a high electron density selected from a group consisting of copper, silver, gold and others. 8. The apparatus according to claim 1 , wherein the enhancement grating object is configured to be shifted laterally with respect to the target object with nanometer precision during tSAXS measurements. 9. The apparatus according to claim 1 , wherein the enhancement grating object is configured to be shifted longitudinally with respect to the target object with nanometer precision during tSAXS measurements. 10. The apparatus according to claim 1 , wherein the enhancement grating object is used as a reference object, the target object has a single or multiple layered structure, and the enhancement grating object is configured to facilitate critical dimension (CD) characterization of the target object with the single or multiple layered structure. 11. The apparatus according to claim 1 , wherein a source of the incident X-ray source is selected from a group consisting a laboratory source, a synchrotron light source providing a high X-ray flux and other X-ray sources. 12. The apparatus according to claim 1 , wherein the enhancement grating object is selected from a group consisting of a one-dimensional (1-D) grating object, a two-dimensional (2-D) grating object, arrays of holes, pillars and other periodical structures.
by measuring small-angle scattering · CPC title
Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions · CPC title
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