Titania doped quartz glass and making method

Patent metadata

Field	Value
Publication number	US-9296636-B2
Application number	US-201213442550-A
Country	US
Kind code	B2
Filing date	Apr 9, 2012
Priority date	Apr 11, 2011
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

On an EUV light-reflecting surface of titania-doped quartz glass, an angle (θ) included between a straight line connecting an origin (O) at the center of the reflecting surface to a birefringence measurement point (A) and a fast axis of birefringence at the measurement point (A) has an average value of more than 45 degrees. Since fast axes of birefringence are distributed in a concentric fashion, a titania-doped quartz glass substrate having a high flatness is obtainable which is suited for use in the EUV lithography.

First claim

The invention claimed is:

1. A method for manufacturing a titania-doped quartz glass, comprising the steps of subjecting a feed of a silicon-providing reactant gas and a titanium-providing reactant gas to oxidation or flame hydrolysis with the aid of a combustible gas and a combustion-supporting gas by using a burner, to form synthetic silica-titania fine particles, depositing the silica-titania fine particles on a rotating target, and concurrently melting and vitrifying the particles to form a titania-doped quartz glass ingot, wherein
during the ingot formation, the molten face of the ingot is maintained in an oblong shape having a major axis aligned with the growth axis direction of the ingot so that a molten face sector of the ingot has a length “a” in the growth axis direction of the ingot and a radius “b” in a radial direction of the ingot perpendicular to the growth axis direction, which meet the relationship: 0.3<1−(b/a)<0.67, and wherein
said burner comprises a central multi-fold tube section A including at least three tubes at the center and a multi-nozzle section B enclosing section A, a multiplicity of combustion-supporting gas feed tubes in the multi-fold tube section B being disposed in five or six rows concentric with the central multi-fold tube.

2. A method for manufacturing a titania-doped quartz glass using a horizontal furnace comprising a burner, the burner comprising a central multi-fold tube section including at least three tubes, a reactant gas injecting central tube, a first combustion-supporting gas feed tube outside the central tube, and a first combustible gas feed tube outside the first combustion-supporting gas feed tube, and a multi-nozzle section including a first shell tube enclosing the central multi-fold tube section, a second shell tube enclosing the first shell tube, and a plurality of combustion-supporting gas feed tubes disposed inside the first and second shell tubes, the spaces surrounding the combustion-supporting gas feed tubes serving as combustible gas feeder,
said method comprising the steps of subjecting a silicon-providing reactant gas and a titanium-providing reactant gas to oxidation or flame hydrolysis with the aid of a combustible gas and a combustion-supporting gas, to form silica and titania fine particles, depositing the silica and titania fine particles on a rotating target, concurrently melting and vitrifying the particles to form a titania-doped quartz glass ingot, wherein
the silicon-providing reactant gas, the titanium-providing reactant gas, and the combustion-supporting gas are fed through the reactant gas injecting central tube in such amounts that the titania-doped quartz glass may have a titania content of 3 to 10% by weight,
the combustible gas is fed at a linear velocity of less than or equal to 100 m/sec, and
the combustible gas and the combustion-supporting gas are fed in such amounts that a H 2 /O 2 ratio may fall in the range: 1.7≦H 2 /O 2 <2, wherein
the flow rates of the combustible gas, the combustion-supporting gas, the silicon-providing reactant gas, and the titanium-providing reactant gas each are controlled within a variation of ±1%,
the temperatures of air fed into the furnace for cooling, exhaust gas taken out of the furnace, and ambient air surrounding the furnace each are controlled within a variation of ±2.5° C.,
the target is rotated at a speed of 5 to 200 rpm without relative oscillation of the burner and the target and without oscillation of the ingot in a plane perpendicular to the growth axis direction, wherein
during the ingot formation, the molten face of the ingot is maintained in an oblong shape having a major axis aligned with the growth axis direction of the ingot so that a molten face sector of the ingot has a length “a” in the growth axis direction of the ingot and a radius “b” in a radial direction of the ingot perpendicular to the growth axis direction, which meet the relationship, 0.3<1−(b/a)<0.67 by adjusting the positional relation between the glass manufacturing burner and the ingot so that the distance between the burner tip and the growth front of the ingot during the process is 250 mm to 330 mm and the angle between the ingot growth axis and the axis of the burner's reactant feed nozzle is 126° to 140°,
said method further comprising the steps of hot shaping the ingot, slicing the ingot to a predetermined thickness, and annealing at a cooling rate of 1 to 20° C. to or below 300° C., wherein
said burner comprises a central multi-fold tube section A including at least three tubes at the center and a multi-nozzle section B enclosing section A, a multiplicity of combustion-supporting gas feed tubes in the multi-fold tube section B being disposed in five or six rows concentric with the central multi-fold tube.

Assignees

• Maida Shigeru
• Otsuka Hisatoshi
• Ueda Tetsuji
• Ezaki Masanobu
• Shinetsu Chemical Co

Inventors

• Maida Shigeru
• Otsuka Hisatoshi
• Ueda Tetsuji
• Ezaki Masanobu

Classifications

• C03C2203/42

  using silicon halides as starting materials · CPC title

• C03B19/1423

  Reactant deposition burners · CPC title

• C03B2207/64

  Angle · CPC title

• C03B2201/42

  doped with titanium · CPC title

• C03C2201/42

  containing titanium · CPC title