Evaporator and method for producing synthetic fused quartz
US-2016107923-A1 · Apr 21, 2016 · US
US9790120B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9790120-B2 |
| Application number | US-201514868858-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 29, 2015 |
| Priority date | Oct 1, 2014 |
| Publication date | Oct 17, 2017 |
| Grant date | Oct 17, 2017 |
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One aspect relates to a method for the production of synthetic quartz glass. Moreover, one aspect relates to a polyalkylsiloxane compound, which includes certain specifications with respect to chlorine content, metallic impurities content, and residual moisture, as well as the use thereof for the production of synthetic quartz glass. One aspect also relates to a synthetic quartz glass that can be obtained according to the method of one embodiment.
Opening claim text (preview).
What is claimed is: 1. A method for the production of synthetic quartz glass, comprising: (a) evaporating a production material that contains at least one polymerisable polyalkylsiloxane compound while forming a production material vapor; (b) supplying the production material vapor resulting from (a) to a reaction zone, in which the production material is converted to SiO 2 particles through pyrolysis or hydrolysis; (c) depositing the SiO 2 particles resulting from (b) on a deposition surface; and (d) if applicable, drying and vitrifying the SiO 2 particles resulting from (c) while forming synthetic quartz glass; wherein the at least one polyalkylsiloxane compound comprises a chlorine content of up to 550 ppb and a metallic impurities content of chromium (Cr) and zinc (Zn) of, added up, up to 25 ppb; and wherein the at least one polyalkylsiloxane compound comprises a residual moisture content of up to 150 ppm. 2. The method of claim 1 , wherein the at least one polyalkylsiloxane compound comprises a chlorine content of up to 400 ppb. 3. The method of claim 1 , wherein the at least one polyalkylsiloxane compound comprises a chlorine content of at least 40 ppb. 4. The method of claim 1 , wherein the at least one polyalkylsiloxane compound comprises a metallic impurities content of Zn and Cr of up to 16 ppb. 5. The method of claim 1 , wherein the at least one polyalkylsiloxane compound comprises a metallic impurities content of Zn and Cr of at least 2 ppb. 6. The method of claim 1 , wherein the at least one polyalkylsiloxane compound is subjected to a purification before using it as production material in order to adjust the chlorine content and the metallic impurities content of Cr and Zn to the range specified above. 7. The method of claim 1 , wherein a multi-burner arrangement including 2 or more burners is used in (a) to (c). 8. A method for the production of synthetic quartz glass, comprising: (a) evaporating a production material that contains at least one polymerisable polyalkylsiloxane compound while forming a production material vapor; (b) supplying the production material vapor resulting from (a) to a reaction zone, in which the production material is converted to SiO 2 particles through pyrolysis or hydrolysis; (c) depositing the SiO 2 particles resulting from (b) on a deposition surface; and (d) if applicable, drying and vitrifying the SiO 2 particles resulting from (c) while forming synthetic quartz glass; wherein the at least one polyalkylsiloxane compound comprises a chlorine content of up to 550 ppb and a metallic impurities content of chromium (Cr) and zinc (Zn) of, added up, up to 25 ppb; and wherein the at least one polyalkylsiloxane compound comprises a metallic impurities content of Zn and Cr of at least 2 ppb. 9. The method of claim 8 , wherein the at least one polyalkylsiloxane compound comprises a chlorine content of up to 400 ppb. 10. The method of claim 8 , wherein the at least one polyalkylsiloxane compound comprises a chlorine content of at least 40 ppb. 11. The method of claim 8 , wherein the at least one polyalkylsiloxane compound comprises a metallic impurities content of Zn and Cr of up to 16 ppb. 12. The method of claim 8 , wherein the at least one polyalkylsiloxane compound comprises a residual moisture content of up to 150 ppm. 13. The method of claim 8 , wherein the at least one polyalkylsiloxane compound comprises a residual moisture content of at least 3 ppm. 14. The method of claim 8 , wherein the at least one polyalkylsiloxane compound is subjected to a purification before using it as production material in order to adjust the chlorine content and the metallic impurities content of Cr and Zn to the range specified above. 15. The method of claim 8 , wherein a multi-burner arrangement including 2 or more burners is used in (a) to (c). 16. A method for the production of synthetic quartz glass, comprising: (a) evaporating a production material that contains at least one polymerisable polyalkylsiloxane compound while forming a production material vapor; (b) supplying the production material vapor resulting from (a) to a reaction zone, in which the production material is converted to SiO 2 particles through pyrolysis or hydrolysis; (c) depositing the SiO 2 particles resulting from (b) on a deposition surface; and (d) if applicable, drying and vitrifying the SiO 2 particles resulting from (c) while forming synthetic quartz glass; wherein the at least one polyalkylsiloxane compound comprises a chlorine content of up to 550 ppb and a metallic impurities content of chromium (Cr) and zinc (Zn) of, added up, up to 25 ppb; and wherein the at least one polyalkylsiloxane compound comprises a residual moisture content of at least 3 ppm. 17. The method of claim 16 , wherein the at least one polyalkylsiloxane compound comprises a chlorine content of up to 400 ppb. 18. The method of claim 16 , wherein the at least one polyalkylsiloxane compound comprises a chlorine content of at least 40 ppb. 19. The method of claim 16 , wherein the at least one polyalkylsiloxane compound comprises a metallic impurities content of Zn and Cr of up to 16 ppb. 20. The method of claim 16 , wherein the at least one polyalkylsiloxane compound comprises a residual moisture content of up to 150 ppm.
Reduction of impurities in the source gas · CPC title
Non-halide · CPC title
Reactant delivery systems · CPC title
by gas- {or vapour-} phase reaction processes · CPC title
Impurity concentration specified · CPC title
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