Film forming method and film forming apparatus

Patent metadata

Field	Value
Publication number	US-9293543-B2
Application number	US-201314044119-A
Country	US
Kind code	B2
Filing date	Oct 2, 2013
Priority date	Oct 3, 2012
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

First claim

What is claimed is:

1. A method of forming a gate insulating film for use in a MOSFET for a power device, the method comprising:
forming an AlN film;
forming an AlO film; and
repeating the forming the AlN film and the forming the AlO film, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated.

2. The method of claim 1 , wherein the film thickness of the AlON film is 50 nm or more.

3. The method of claim 1 , wherein the AlON film is formed on a substrate and the substrate includes any one of silicon carbonate, gallium nitride and diamond.

4. The method of claim 1 , wherein a heat treatment is performed on the AlON film having the laminated structure.

5. The method of claim 1 , wherein the AlN film formed at the very first among the AlN films is formed before the AlO film formed at the very first among the AlO films.

6. The method of claim 1 , wherein the formation of the AlN film and/or the formation of the AlO film are performed by ALD, CVD or PVD.

7. A method of forming a gate insulating film for use in a MOSFET for a power device, the method comprising:
forming an AlN film;
oxidizing the AlN film after the AlN film is formed; and
repeating the forming the AlN film and the oxidizing the AlN film alternately, thereby forming an AlON film having a laminated structure in which oxidized AlN films are laminated.

8. The method of claim 7 , wherein the film thickness of the AlON film is 50 nm or more.

9. The method of claim 7 , wherein the AlON film is formed on a substrate and the substrate includes any one of silicon carbonate, gallium nitride and diamond.

10. The method of claim 7 , wherein a heat treatment is performed on the AlON film having the laminated structure.

11. The method of claim 7 , wherein the formation of the AlN film is performed by ALD, CVD or PVD.

12. The method of forming a gate insulating film for use in a MOSFET for a power device, the method comprising:
forming an AlO film;
nitriding the AlO film after the AlO film is formed; and
repeating the forming the AlO film and the nitriding the AlO film alternately, thereby forming an AlON film having a laminated structure in which nitrided AlO films are laminated.

13. The method of claim 12 , the film thickness of the AlON film is 50 nm or more.

14. The method of claim 12 , wherein the AlON film is formed on a substrate and the substrate includes any of silicon carbonate, gallium nitride and diamond.

15. The method of claim 12 , wherein a heat treatment is performed on the AlON film having the laminated structure.

16. The method of claim 12 , wherein the formation of the AlO film is performed by ALD, CVD or PVD.

17. A film forming apparatus comprising:
a film forming unit configured to form an AlN film and an AlO film,
wherein the film forming unit repeats a formation of the AlN film and a formation of the AlO film, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated.

18. A film forming apparatus comprising:
a film forming unit configured to form an AlN film; and
an oxidation unit configured to oxidize the AlN film after the AlN film is formed,
wherein the film forming unit and the oxidation unit repeat the formation of the AlN film and the oxidation of the AlN film alternately, thereby forming an AlON film having a laminated structure in which oxidized AlN films are laminated.

19. A film forming apparatus comprising:
a film forming unit configured to form an AlO film; and
a nitridation unit configured to nitride the AlO film after the AlO film is formed,
wherein the film forming unit and the nitridation unit repeat the formation of the AlO film and the nitridation of the AlO film, thereby forming an AlON film having a laminated structure in which nitrided AlO films are laminated.

Assignees

• Tokyo Electron Ltd
• Univ Osaka

Inventors

• Azumo Shuji
• Kashiwagi Yusaku
• Morozumi Yuichiro
• Wamura Yu
• Harada Katsushige
• Takahashi Kosuke
• Watanabe Heiji
• Shimura Takayoshi
• Hosoi Takuji

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6526

  introduced into an oxide material, e.g. changing SiO to SiON · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title