In situ control of ion angular distribution in a processing apparatus

Patent metadata

Field	Value
Publication number	US-9293301-B2
Application number	US-201314139679-A
Country	US
Kind code	B2
Filing date	Dec 23, 2013
Priority date	Dec 23, 2013
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

First claim

What is claimed is:

1. A processing apparatus comprising:
a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber;
an extraction plate disposed along a side of the plasma chamber, the extraction plate having an aperture;
a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber, wherein the deflection electrode includes a first deflection electrode part adjacent a second deflection electrode part, and wherein the first deflection electrode part and the second deflection electrode part are each independently movable in a vertical direction; and
a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

2. The processing apparatus of claim 1 , wherein the pair of plasma menisci have a first shape when the first bias voltage is applied to the deflection electrode, and wherein the pair of plasma menisci have a second shape different from the first shape when the second bias voltage is applied to the deflection electrode.

3. The processing apparatus of claim 1 , wherein the deflection electrode is configured to move in a direction perpendicular to a plane defined by a plane of the extraction plate, wherein in a first deflection electrode position a first distance from the plane, ions extracted from the plasma have first angular incidence, and wherein in a second deflection electrode position a second distance from the plane, wherein the second distance is greater than the first distance, ions extracted from the plasma have a second angular incidence different from the first angular incidence.

4. The processing apparatus of claim 1 , further comprising an extraction plate power supply configured to apply an extraction plate voltage to the extraction plate independently of the bias voltage applied to the deflection electrode.

5. The processing apparatus of claim 1 , wherein the extraction plate includes a first portion and second portion and defines a plane, the processing apparatus further comprising a first extraction plate power supply configured to supply a first bias voltage to the first portion, and a second extraction plate power supply configured to supply a second bias voltage to the second portion.

6. The processing apparatus of claim 1 , wherein the deflection electrode power supply is interoperative with the deflection electrode to vary angle of incidence of ions extracted from at least one of the pair of plasma meniscus by ten degrees or greater when the bias voltage applied to the deflection electrode is varied.

7. The processing apparatus of claim 5 , wherein the aperture comprises a first aperture and the deflection electrode comprises a first deflection electrode, and wherein the extraction plate comprises a third portion disposed adjacent the second portion and configured to define a second aperture therebetween.

8. The processing apparatus of claim 7 , wherein the pair of plasma menisci comprises a first pair, the process apparatus further comprising a second deflection electrode disposed adjacent to the second aperture and configured to generate a second pair of plasma menisci proximate the second aperture.

9. The processing apparatus of claim 1 , wherein the deflection electrode is configured to vary meniscus shape of the pair of plasma menisci when power from the plasma source is varied over a plasma power range, wherein angle of incidence of ions extracted through the pair of plasma menisci varies by at least ten degrees.

10. A processing apparatus comprising:
a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber;
a process chamber adjacent the plasma chamber and containing a substrate holder;
an extraction system disposed between the plasma and substrate holder, the extraction system comprising a deflection electrode and an extraction plate having an aperture that is disposed proximate the deflection electrode,
wherein the deflection electrode includes a first deflection electrode part adjacent a second deflection electrode part, the first deflection electrode part and the second deflection electrode part each being independently movable in a vertical direction,
wherein, when an extraction voltage is applied between the plasma chamber and substrate holder, the deflection electrode and extraction plate are interoperative to extract a pair of ion beams from the plasma through the aperture, and
wherein the deflection electrode and extraction plate are interoperative to adjust an angle of incidence of at least one of the pair of ion beams by movement of at least one of the deflection electrode and extraction plate.

11. The processing apparatus of claim 10 , further comprising a deflection electrode power supply to apply a bias voltage to the deflection electrode, wherein a first bias voltage generated by the deflection electrode power supply is configured to generate a first angle of incidence for ions extracted from the plasma, and a second bias voltage generated by the deflection electrode power supply is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

12. The processing apparatus of claim 11 , wherein the deflection electrode comprises a first deflection electrode part and second deflection electrode part that are electrically conductive and electrically isolated from one another, wherein the deflection electrode power supply is a first deflection electrode power supply, the first electrode part is coupled to the first deflection electrode power supply, the processing apparatus further comprising a second deflection electrode power supply coupled to the second deflection electrode part, wherein the first deflection electrode part and second deflection electrode part are operative receive to bias voltage independently from one another from the respective first and second deflection electrode bias supplies.

13. A method of controlling an ion beam provided to a substrate, comprising:
generating a plasma in a plasma chamber adjacent a process chamber that contains the substrate;
providing an extraction plate having an aperture between the plasma chamber and process chamber;
arranging a deflection electrode proximate the aperture, wherein the deflection electrode includes a first deflection electrode part adjacent a second deflection electrode part, and wherein the first deflection electrode part and the second deflection electrode part are each independently movable in a vertical direction; and
varying a deflection electrode voltage applied to the deflection electrode from a first voltage to a second voltage, wherein the first voltage is configured to generate a first angle of incidence for ions extracted from the plasma, and second voltage is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

14. The method of claim 13 , further comprising moving the deflection electrode in a direction perpendicularly to a plane of the ex

Assignees

• Varian Semiconductor Equipment

Inventors

• Biloiu Costel
• Munoz Nini
• Godet Ludovic
• Renau Anthony

Classifications

• H01J37/32568

  Relative arrangement or disposition of electrodes; moving means · CPC title

• H01J37/32412 Primary

  Plasma immersion ion implantation · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title

• H01J37/32357 Primary

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J2237/3365

  Plasma source implantation · CPC title