Memories and methods of forming thin-film transistors using hydrogen plasma doping

Patent metadata

Field	Value
Publication number	US-9136282-B2
Application number	US-201514599886-A
Country	US
Kind code	B2
Filing date	Jan 19, 2015
Priority date	Jan 11, 2013
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled.

First claim

What is claimed is:

1. A method of forming a memory cell string, comprising:
forming polycrystalline silicon in an opening in a stack of alternating layers of poly-silicon material and dielectric material to form a pillar of a channel for a NAND string;
hydrogen plasma doping the polycrystalline silicon to form doped polycrystalline silicon;
in-situ depositing of a deposition material;
separately annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled; and
removing the deposition material after annealing the doped polycrystalline silicon.

2. The method of claim 1 , wherein in-situ depositing of the deposition material comprises the in-situ depositing of an element selected from a group consisting of boron (B), Argon (Ar) and Phosphorus (P).

3. The method of claim 1 , further comprising:
forming the stack of alternating layers.

4. The method of claim 1 , further comprising:
forming the opening in the stack of alternating layers.

5. The method of claim 1 , further comprising:
forming a tunnel dielectric along the opening.

6. The method of claim 1 , further comprising:
recessing the polycrystalline silicon from the opening to form recesses along the opening.

7. The method of claim 1 , wherein hydrogen plasma doping the polycrystalline silicon comprises hydrogen plasma doping the polycrystalline silicon using an energy of about 1-10 keV and a hydrogen dose of about 1×10 17 to about 1×10 19 /cm 2 .

8. The method of claim 1 , wherein hydrogen plasma doping the polycrystalline silicon comprises hydrogen plasma doping the polycrystalline silicon using an energy of about 1-10 keV and a hydrogen dose of about 5×10 18 /cm 2 .

9. The method of claim 1 , wherein hydrogen plasma doping the polycrystalline silicon comprises hydrogen plasma doping the polycrystalline silicon at approximately room temperature.

10. The method of claim 1 , wherein hydrogen plasma doping the polycrystalline silicon comprises hydrogen plasma doping the polycrystalline silicon in a chamber.

11. The method of claim 10 , wherein separately annealing the doped polycrystalline silicon comprises annealing the doped polycrystalline silicon in a furnace that is separate from the chamber.

12. The method of claim 1 , wherein the annealing comprises furnace annealing.

13. The method of claim 1 , wherein annealing the doped polycrystalline silicon comprises annealing using a temperature of approximately 350-400° C.

14. A method of forming a memory cell string, comprising:
forming polycrystalline silicon in an opening in a stack of alternating layers of poly-silicon material and dielectric material to form a pillar of a channel for a NAND string;
hydrogen plasma doping the polycrystalline silicon to form doped polycrystalline silicon;
depositing a metal;
separately annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled; and
removing the metal after annealing the doped polycrystalline silicon.

15. The method of claim 14 , wherein depositing the metal comprises depositing the metal selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti) and titanium nitride (TiN).

16. The method of claim 14 , wherein depositing the metal comprises physical vapor depositing the metal.

17. A memory formed according to a method, the method comprising:
forming polycrystalline silicon in an opening in a stack of alternating layers of poly-silicon material and dielectric material to form a pillar of a channel for a NAND string in a three-dimensional NAND array;
hydrogen plasma doping the polycrystalline silicon to form doped polycrystalline silicon;
in-situ depositing of a deposition material;
annealing the three-dimensional NAND array, wherein the hydrogen plasma doping and the annealing are decoupled; and
removing the deposition material after annealing the three-dimensional NAND array.

18. The memory of claim 17 , wherein the method further comprises:
forming charge storage structures in recesses in the opening in the stack, the recesses formed by recessing the poly-silicon material from the opening.

19. The memory of claim 17 , wherein in-situ depositing of the deposition material comprises depositing the deposition material comprising a metal.

20. The memory of claim 17 , wherein removing the deposition material comprises removing a metal layer.

Assignees

• Micron Technology Inc

Inventors

• Qin Shu
• Liu Haitao
• Lu Zhenyu

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P32/1204

  from a plasma phase · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3438

  Doping during depositing · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title