Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method

Patent metadata

Field	Value
Publication number	US-9291904-B2
Application number	US-201414549164-A
Country	US
Kind code	B2
Filing date	Nov 20, 2014
Priority date	Dec 25, 2006
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

First claim

What is claimed is:

1. A pattern forming method, comprising:
coating a substrate with a resist composition capable of forming a resist film of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays or radiation, so as to form the resist film;
exposing the resist film with an EUV light;
developing the resist film with the negative developer containing an organic solvent; and
washing the resist film with a rinsing solution containing a hydrocarbon-based organic solvent,
wherein the resist composition contains a resin having an aromatic group, and
the pattern forming method only includes negative development for developing the exposed resist film.

2. The pattern forming method according to claim 1 ,
wherein the hydrocarbon-based organic solvent is an aliphatic hydrocarbon based organic solvent.

3. The pattern forming method according to claim 1 ,
wherein the organic solvent in the negative developer contains an ester-based solvent.

4. A method of forming an electronic device, comprising the pattern forming method according to claim 1 .

5. The pattern forming method according to claim 1 , wherein the rinsing solution contains a hydrocarbon-based organic solvent and at least one of the group consisting of a ketone solvent, an ester solvent, an ether solvent, an alcohol solvent and an amide solvent.

Assignees

• Fujifilm Corp

Inventors

• Tsubaki Hideaki
• Kanna Shinichi

Classifications

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/325 Primary

  Non-aqueous compositions · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/0392 Primary

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title