Microchip and film forming method for metal thin film of microchip
US-9696253-B2 · Jul 4, 2017 · US
US9290392B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9290392-B2 |
| Application number | US-201213486509-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 1, 2012 |
| Priority date | Aug 5, 2011 |
| Publication date | Mar 22, 2016 |
| Grant date | Mar 22, 2016 |
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The present application discloses a shape preserving chemical transformation of ZnO mesostructures into anatase TiO 2 mesostructures using controlled low temperature TiCl 4 treatment for optoelectronic applications.
Opening claim text (preview).
We claim: 1. A process for the shape preserving chemical transformation of ZnO mesostructures into anatase TiO 2 mesostructures comprising the steps of: i. treating the Zinc oxide mesostructures with Titanium tetrachloride (TiCl 4 ) solution at temperature in the range of 60 to 70° C. for period in the range of 20 to 30 min; ii. annealing the TiCl 4 treated Zinc oxide mesostructures as obtained in step (i) at a temperature in the range of 400 to 450° C. for period in the range of 20 to 30 min to obtain anatase TiO 2 mesostructures. 2. The process of claim 1 , wherein the Zinc oxide mesostructures are selected from the group consisting of Zinc oxide rods, Zinc oxide spheres, Zinc oxide flakes and Zinc oxide flowers. 3. The process of claim 1 , wherein the Zinc oxide mesostructures are coated over Titanium dioxide nanoparticles film and annealed at a temperature in the range of 400 to 450° C. for 50 to 60 min before treating with Titanium tetrachloride (TiCl 4 ) solution. 4. The process of claim 1 , wherein the Zinc oxide mesostructures are optionally grown on Fluorine doped Tin oxide (FTO) or Indium doped Tin oxide (ITO) glass plates before treating with Titanium tetrachloride (TiCl 4 ) solution. 5. The process of claim 4 , wherein the Zinc oxide mesostructures treated with Titanium tetrachloride (TiCl 4 ) solution are washed with deionized water. 6. The process as claimed in claim 1 , wherein the thickness of anatase TiO 2 mesostructures is in the range of 5-12 μm. 7. The process as claimed in claim 1 , wherein the diameter of anatase TiO 2 mesostructure is ranging from 500 nm to 2 μm. 8. Anatase Titanium dioxide mesostructures prepared by the process of claim 1 . 9. Anatase Titanium dioxide mesostructures as claimed in claim 8 , wherein said mesostructures are useful for optoelectronic applications. 10. Anatase Titanium dioxide mesostructures as claimed in claim 8 , wherein dye sensitized solar cells utilizing said mesostructures exhibit efficiency in the range of 3.5% to 7%.
Oxides; Hydroxides · CPC title
Three-dimensional structures · CPC title
by XPS, EDX or EDAX data · CPC title
by d-values or two theta-values, e.g. as X-ray diagram · CPC title
obtained by SEM · CPC title
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