Microchip and film forming method for metal thin film of microchip

Patent metadata

Field	Value
Publication number	US-2016109356-A1
Application number	US-201414895405-A
Country	US
Kind code	A1
Filing date	Jun 2, 2014
Priority date	Jun 4, 2013
Publication date	Apr 21, 2016
Grant date	—

Abstract

Disclosed herein are a microchip provided with a titanium oxide film between a glass substrate and a metal thin film; and a method for forming the metal thin film and the titanium oxide film on the glass substrate of the microchip. The microchip has a second microchip substrate that has the metal thin film inside a channel, and the titanium oxide film, which has a low extinction coefficient, is provided as a buffer layer between the substrate and the metal thin film such as a gold film.

First claim

1 . A microchip comprising:
a substrate made of glass on which metal thin film is formed; a channel formed in a space including the metal thin film; and a titanium oxide film provided between the substrate and the metal thin film, the titanium oxide film having a rutile type structure and an anatase type structure being mixed; the titanium oxide film contacting the substrate on one face of the titanium oxide film, and contacting the metal thin film with the other face of the titanium oxide film.

2 . The microchip according to claim 1 , wherein the metal thin film is composed of any of gold (Au), platinum (Pt), rhodium (Rh), palladium (Pd), or palladium-platinum alloy (Pd—Pt alloy).

3 . A method of forming a metal thin film in a microchip including a substrate made of glass on which the metal thin film is formed, and a channel formed in a space including the metal thin film, the method comprising:
irradiating a surface of the substrate with light including vacuum ultraviolet light with a wavelength equal to or less than 200 nm under an ambient atmosphere containing oxygen and moisture; immersing the substrate in titanium ion solution and forming a titanium oxide film having a rutile type structure and an anatase type structure being mixed on a vacuum ultraviolet light irradiated face of the substrate; and depositing the metal thin film on the surface of the substrate on which the titanium oxide film is formed.

4 . The method for forming a metal thin film in a microchip according to claim 3 , wherein the metal thin film is composed of any of gold (Au), platinum (Pt), rhodium (Rh), palladium (Pd), or palladium-platinum alloy (Pd—Pt alloy).

5 . A microchip comprising:
a substrate made of glass on which metal thin film is formed; and a channel formed in a space including the metal thin film; wherein the metal chin film is formed by the method forming the metal thin film according to claim 3 .

Assignees

• Ushio Electric Inc

Inventors

• Morita Kinichi
• Kawaguchi Toshikazu

Classifications

• G01N21/05 Primary

  Flow-through cuvettes (G01N21/09 takes precedence; handling fluid samples G01N1/10) · CPC title

• C03C2218/111

  by dipping, immersion · CPC title

• C03C17/3657

  the multilayer coating having optical properties · CPC title

• C03C17/3649

  made of metals other than silver · CPC title

• C03C17/3607

  Coatings of the type glass/inorganic compound/metal · CPC title