Decoupling measurement of layer thicknesses of a plurality of layers of a circuit structure

Patent metadata

Field	Value
Publication number	US-9281249-B2
Application number	US-201414155504-A
Country	US
Kind code	B2
Filing date	Jan 15, 2014
Priority date	Jan 15, 2014
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

Measurement of thickness of layers of a circuit structure is obtained, where the thickness of the layers is measured using an optical critical dimension (OCD) measurement technique, and the layers includes a high-k layer and an interfacial layer. Measurement of thickness of the high-k layer is separately obtained, where the thickness of the high-k layer is measured using a separate measurement technique from the OCD measurement technique. The separate measurement technique provides greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer of the layers. Characteristics of the circuit structure, such as a thickness of the interfacial layer, are ascertained using, in part, the separately obtained thickness measurement of the high-k layer.

First claim

What is claimed is:

1. A method comprising:
obtaining a measurement of thickness of a plurality of layers of a circuit structure, the thickness of the plurality of layers measured using an optical critical dimension (OCD) measurement technique, and the plurality of layers comprising a high-k layer and an interfacial layer;
separately obtaining a measurement of thickness of the high-k layer, the thickness of the high-k layer measured using a separate measurement technique from the OCD measurement technique and providing greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer; and
ascertaining, by a hardware processor, a thickness of the interfacial layer using, in part, the separately obtained thickness measurement of the high-k layer,
wherein the circuit structure comprises a fin field-effect transistor (FinFET) or a nanostructure, and wherein measurement of the thickness of the plurality of layers using the OCD measurement technique and measurement of the thickness of the high-k layer using the separate measurement technique are performed concurrently during fabrication of the FinFET or nanostructure.

2. The method of claim 1 , wherein the OCD measurement technique comprises measuring a composite thickness, the composite thickness comprising thickness of the high-k layer and thickness of the interfacial layer, and wherein the separate measurement technique comprises detecting an emitted signal unique to the high-k layer and producing a corresponding spectra unique to the high-k layer.

3. The method of claim 2 , wherein the separate measurement technique comprises an electron-based measurement technique.

4. The method of claim 3 , wherein the electron-based measurement technique comprises at least one of: x-ray photoelectron spectroscopy, x-ray fluorescence spectroscopy, and electron probe microanalysis.

5. A method comprising:
obtaining a measurement of thickness of a plurality of layers of a circuit structure, the thickness of the plurality of layers measured using an optical critical dimension (OCD) measurement technique, and the plurality of layers comprising a high-k layer and an interfacial layer;
separately obtaining a measurement of thickness of the high-k layer, the thickness of the high-k layer measured using a separate measurement technique from the OCD measurement technique and providing greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer; and
ascertaining, by a hardware processor, a thickness of the interfacial layer using the separately obtained thickness measurement of the high-k layer and the thickness measurement of the plurality of layers in an OCD model of the OCD measurement technique to ascertain the thickness of the interfacial layer.

6. The method of claim 5 , wherein using the separately obtained thickness measurement of the high-k layer comprises using the separately obtained thickness measurement of the high-k layer as a seed value in the OCD model to facilitate decoupling the thickness of the high-k layer from the thickness of the interfacial layer in the OCD model.

7. The method of claim 6 , wherein a variable for the thickness of the high-k layer in the OCD model is fixed as the seed value.

8. The method of claim 6 , wherein the seed value is used for weighing a variable for the thickness of the high-k layer in the OCD model.

9. The method of claim 5 , further comprising using the thickness measurement of the plurality of layers and the separately obtained thickness measurement of the high-k layer in the OCD model to ascertain one or more of: (i) critical dimension, (ii) height, and (iii) sidewall angle of the circuit structure.

10. The method of claim 1 , wherein the circuit structure comprises a three-dimensional structure having at least one protruding surface and wherein the plurality of layers are disposed at, or over a top of, the at least one protruding surface of the three-dimensional structure.

11. The method of claim 5 , wherein the circuit structure comprises a fin field-effect transistor (FinFET) or a nanostructure, and wherein measurement of the thickness of the plurality of layers using the OCD measurement technique and measurement of the thickness of the high-k layer using the separate measurement technique are performed concurrently during fabrication of the FinFET or nanostructure.

12. A system comprising:
a memory; and
a hardware processor in communications with the memory, wherein the system is configured to perform a method comprising:
obtaining a measurement of thickness of a plurality of layers of a circuit structure, the thickness of the plurality of layers measured using an optical critical dimension (OCD) measurement technique, and the plurality of layers comprising a high-k layer and an interfacial layer;
separately obtaining a measurement of thickness of the high-k layer, the thickness of the high-k layer measured using a separate measurement technique from the OCD measurement technique and providing greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer; and
ascertaining a thickness of the interfacial layer using, in part, the separately obtained thickness measurement of the high-k layer,

wherein the circuit structure comprises a fin field-effect transistor (FinFET) or a nanostructure, and wherein measurement of the thickness of the plurality of layers using the OCD measurement technique and measurement of the thickness of the high-k layer using the separate measurement technique are performed concurrently during fabrication of the FinFET or nanostructure.

13. The system of claim 12 , wherein the OCD measurement technique comprises measuring a composite thickness, the composite thickness comprising thickness of the high-k layer and thickness of the interfacial layer, and wherein the separate measurement technique comprises detecting an emitted signal unique to the high-k layer and producing a corresponding spectra unique to the high-k layer.

14. The system of claim 13 , wherein the separate measurement technique comprises an electron-based measurement technique.

15. A system comprising:
a memory; and
a hardware processor in communications with the memory, wherein the system is configured to perform a method comprising:
obtaining a measurement of thickness of a plurality of layers of a circuit structure, the thickness of the plurality of layers measured using an optical critical dimension (OCD) measurement technique, and the plurality of layers comprising a high-k layer and an interfacial layer;
separately obtaining a measurement of thickness of the high-k layer, the thickness of the high-k layer measured using a separate measurement technique from the OCD measurement technique and providing greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer; and
ascertaining a thickness of the interfacial layer using the thickness measurement of the plurality of layers and using the separately obtained thickness measurement of the high-k layer in an OCD model of the OCD measurement technique to ascertain the thickness of the interfacial layer.

16. The system of claim 15 , wherein the circuit structure comprises a fin field-effect transistor (FinFET) or a nanostructure, and wherein measurement of the thickness o

Assignees

• Globalfoundries Inc

Inventors

• Vaid Alok
• Bello Abner
• Gu Sipeng
• Subramany Lokesh
• Hu Xiang
• Sehgal Akshey

Classifications

• H10P74/203 Primary

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• G03F7/70616

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• G01B2210/56

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• G03F7/70625

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title

• G01N21/211

  Ellipsometry (optical thickness measurement G01B11/06) · CPC title