Breaking-in and cleaning method and apparatus for wafer-cleaning brush
US-2024066566-A1 · Feb 29, 2024 · US
US9281178B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9281178-B2 |
| Application number | US-201314136381-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2013 |
| Priority date | Dec 26, 2008 |
| Publication date | Mar 8, 2016 |
| Grant date | Mar 8, 2016 |
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A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.
Opening claim text (preview).
The invention claimed is: 1. A method for cleaning a surface of a silicon wafer using a cleaning system comprising: (a) a water-based cleaning liquid; and (b) a water-repellent cleaning liquid for providing at least a recessed portion of the uneven pattern with water repellency during a cleaning process; the method comprising the steps of: (i) cleaning the surface with the water-based cleaning liquid, (ii) using the water-repellent cleaning liquid in a manner as to substitute the water-based cleaning liquid having been retained in the recessed portion of the uneven pattern of the surface, and (iii) removing the water repellency-provided surface condition of the silicon wafer, after removing the cleaning liquid having been retained in the recessed portion of the uneven pattern of the surface after step (ii) wherein the water-based cleaning liquid is selected from the group consisting of water, and a mixture of 50 mass % or more water and at least one kind of an organic solvent acid, and alkali; wherein the water-repellent cleaning liquid comprises a mixture of a water-repellent compound and an organic solvent, the water-repellent compound having a hydrophobic group and a reactive moiety chemically bondable to Si element in the silicon wafer, the organic solvent containing at least an alcoholic solvent; wherein the water-repellent compound comprises at least one selected from the group consisting of the following general formulas [1] and [2], (R 1 ) a Si(CH 3 ) b H c X 4-a-b-c [1] [R 2 Si(CH 3 ) 2-d H d ] e NH 3-e [2] wherein R 1 mutually independently represents one of a monovalent organic group having hydrocarbon group with a carbon number of from 1 to 18 and a monovalent organic group having fluoroalkyl chain with a carbon number of from 1 to 8; R 2 mutually independently represents one of a monovalent organic group having hydrocarbon group with a carbon number of from 1 to 18 and a monovalent organic group having fluoroalkyl chain with a carbon number of from 1 to 8; X mutually independently represents at least one group selected from the group consisting of halogen group, alkoxy group, acetoxy group, trifluoroacetoxy group, —OC(CH 3 )═CHCOCH 3 , —OC(CH 3 )═N—Si(CH 3 ) 3 , —OC(CF 3 )═N—Si(CH 3 ) 3 , —CO—NH—Si(CH 3 ) 3 , alkylsulfonate group, perfluoroalkylsufonate group, nitrile group and a monovalent organic group whose element to be bonded to Si element is nitrogen; a is an integer of from 1 to 3; each of b and c is an integer of from 0 to 2; the total of a, b and c is from 1 to 3; d is an integer of from 0 to 2; e is an integer of from 1 to 3. 2. A cleaning method for a surface of a silicon wafer, as claimed in claim 1 , further comprising a step of: conducting at least one treatment selected from the group consisting of irradiating the surface of the silicon wafer with light, heating the silicon wafer, and exposing the silicon wafer to ozone, after removing the cleaning liquid from the surface of the silicon wafer. 3. A method for providing water repellency to an unevenly patterned surface of a silicon wafer, comprising the steps of: (i) using a cleaning system comprising: (a) a water-based cleaning liquid; and (b) a water-repellent cleaning liquid for providing at least a recessed portion of the uneven pattern with water repellency during a cleaning process, wherein the water-repellent cleaning liquid comprises a mixture of a water-repellent compound and an organic solvent, wherein the water-repellent compound has a hydrophobic group and a reactive moiety chemically bondable to Si element in the silicon wafer, wherein the organic solvent contains at least an alcoholic solvent; and wherein after cleaning with the water-based cleaning liquid, the water-based cleaning liquid having retained in the recessed portion of the uneven pattern of the surface of the silicon wafer is replaced with the water-repellent cleaning liquid.
Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title
by combined dry cleaning and wet cleaning (H10P70/52 takes precedence) · CPC title
by wet cleaning only (H10P70/52 takes precedence) · CPC title
Polysiloxanes · CPC title
containing oxygen · CPC title
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