Tunneling devices and methods of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9269775-B2
Application number	US-201414188862-A
Country	US
Kind code	B2
Filing date	Feb 25, 2014
Priority date	Jul 15, 2013
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer.

First claim

What is claimed is:

1. A tunneling device comprising:
a tunnel barrier layer;
a first material layer on a first surface of the tunnel barrier layer, the first material layer including a P-type two-dimensional (2D) material; and
a second material layer on a second surface of the tunnel barrier layer, the second material layer including an N-type 2D material,
wherein the tunneling device uses a tunneling current through the tunnel barrier layer between the first material layer and the second material layer, and
wherein the first material layer has a work function of about 5.0 eV to about 5.9 eV, and the second material layer has a work function of about 3.2 eV to about 4.0 eV.

2. The tunneling device of claim 1 , wherein
the P-type 2D material comprises graphene doped with a P-type dopant, and
the N-type 2D material comprises graphene doped with an N-type dopant.

3. The tunneling device of claim 1 , wherein the tunnel barrier layer comprises a 2D material.

4. The tunneling device of claim 3 , wherein the tunnel barrier layer comprises one of hexagonal boron nitride (h-BN), MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , GaS, and GaSe.

5. The tunneling device of claim 3 , wherein the tunnel barrier layer comprises a transition metal dichalcogenide (TMDC) material.

6. The tunneling device of claim 1 , wherein the tunneling device has rectification characteristics.

7. The tunneling device of claim 1 , wherein the tunneling device has a two-terminal structure.

8. The tunneling device of claim 1 , further comprising:
a first electrode contacting the first material layer; and
a second electrode contacting the second material layer.

9. The tunneling device of claim 1 , further comprising one of:
(i) a substrate including the first material layer on a surface thereof, wherein the tunnel barrier layer is on a first region of the first material layer and extends over a region of the substrate adjacent to the first region of the first material layer, and the second material layer is on a first region of the tunnel barrier layer,
a first electrode on a second region of the first material layer and extends over a second region of the tunnel barrier layer adjacent to the second region of the first material layer, and
a second electrode on the second material layer; and
(ii) a substrate including the second material layer on a surface thereof, wherein the tunnel barrier layer is on a first region of the second material layer and extends over a region of the substrate adjacent to the first region of the second material layer, and the first material layer is on a first region of the tunnel barrier layer,
a first electrode on a second region of the second material layer and extends over a second region of the tunnel barrier layer adjacent to the second region of the second material layer; and
a second electrode on the first material layer.

10. A tunneling device comprising:
a tunnel barrier layer;
a first material layer on a first surface of the tunnel barrier layer, the first material layer including a P-type two-dimensional (2D) material; and
a second material layer on a second surface of the tunnel barrier layer, the second material layer including an N-type 2D material,
wherein the tunneling device uses a tunneling current through the tunnel barrier layer between the first material layer and the second material layer,
the P-type 2D material comprises a P-type transition metal dichalcogenide (TMDC) material, and
the N-type 2D material comprises an N-type transition metal dichalcogenide (TMDC) material.

11. A tunneling device comprising:
a tunnel barrier layer;
a first material layer on a first surface of the tunnel barrier layer, the first material layer including a P-type two-dimensional (2D) material; and
a second material layer on a second surface of the tunnel barrier layer, the second material layer including an N-type 2D material,
wherein the tunneling device uses a tunneling current through the tunnel barrier layer between the first material layer and the second material layer,
the P-type 2D material comprises one of WSe 2 , NbSe 2 , and GaSe, and
the N-type 2D material comprises one of MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , and GaS.

12. The tunneling device of claim 11 , wherein the tunnel barrier layer comprises one of h-BN and an oxide having a bandgap of more than about 1.0 eV.

13. A method of manufacturing a tunneling device, comprising:
forming a first material layer on a substrate, the first material layer including a first conductivity type two-dimensional (2D) material;
forming a tunnel barrier layer on the first material layer; and
forming a second material layer on the tunnel barrier layer, the second material layer including a second conductivity type 2D material,
wherein the forming a first material layer forms the first material layer to have a work function of about 5.0 eV to about 5.9 eV, and
the forming a second material layer forms the second material layer to have a work function of about 3.2 eV to about 4.0 eV.

14. The method of claim 13 , wherein the forming a first material layer comprises:
forming a first graphene layer on the substrate; and
doping the first graphene layer with a first conductivity type dopant by a chemical doping process.

15. The method of claim 14 , wherein
the doping dopes the first graphene layer with a P-type dopant,
the P-type dopant has at least one of AuCl 3 and diazonium salt as a source.

16. The method of claim 13 , wherein the forming a second material layer comprises:
forming a second graphene layer on the tunnel barrier layer; and
doping the second graphene layer with a second conductivity type dopant by a chemical doping process.

17. The method of claim 16 , wherein
the doping dopes the second graphene layer with an N-type dopant,
the N-type dopant has at least one of benzyl-viologen (BV) and polyethylenimine (PEI) as a source.

18. The method of claim 13 , wherein the forming a tunnel barrier layer forms a 2D material.

19. The method of claim 18 , wherein the forming a tunnel barrier layer forms one of hexagonal boron nitride (h-BN), MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , GaS, and GaSe.

20. The method of claim 13 , wherein
the forming a first material layer forms one of WSe 2 , NbSe 2 , and GaSe, and
the forming a second material layer forms one of MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , and GaS.

21. The method of claim 13 , further comprising:
forming a first electrode contacting the first material layer; and
forming a second electrode contacting the second material layer.

Assignees

• Samsung Electronics Co Ltd
• Univ Sungkyunkwan Found

Inventors

• Choi Jun-Hee
• Yoo Won-Jong
• Lee Seung-Hwan
• Choi Min-Sup
• Liu xiao chi
• Lee Ji-A

Classifications

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H10D30/0291

  of vertical DMOS [VDMOS] FETs · CPC title

• H10D48/032 Primary

  of unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT] · CPC title

• H10D62/8303

  Diamond · CPC title

• H10D10/881

  Resonant tunnelling transistors · CPC title