Water soluble mask for substrate dicing by laser and plasma etch

Patent metadata

Field	Value
Publication number	US-9263308-B2
Application number	US-201414190024-A
Country	US
Kind code	B2
Filing date	Feb 25, 2014
Priority date	Jun 15, 2011
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

Methods of dicing substrates having a plurality of ICs are disclosed. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer is washed off.

First claim

What is claimed is:

1. A system for dicing a semiconductor substrate comprising a plurality of ICs, the system comprising:
a cluster tool comprising:
a plasma etch chamber;
a robotic transfer chamber coupled to the plasma etch chamber; and
a wet process module coupled to the robotic transfer chamber;

a laser scribe module to pattern a mask and expose regions of the substrate between the ICs, the mask comprising a layer of the water soluble material; and
a factory interface coupled to the robotic transfer chamber of the cluster tool and coupled to the laser scribe module wherein the semiconductor substrate is transferred between the cluster tool and the laser scribe module through the factory interface.

2. The system of claim 1 wherein the wet process module comprises a pressurized water jet.

3. The system of claim 1 , wherein the laser scribe comprises a femtosecond laser having a wavelength less than or equal to 530 nanometers and a pulse width of less than or equal to 500 femtoseconds.

4. The system of claim 1 , further comprising:
a spin coater to apply an aqueous solution of the water soluble material onto the substrate; and
a hot plate to dry the aqueous solution into the water soluble material.

5. The system of claim 1 , further comprising:
a vacuum tape module coupled to the robotic transfer chamber to laminate dry film of the water soluble material onto the substrate.

6. The system of claim 1 , wherein the plasma etch chamber is coupled to SF 6 and at least one of C 4 F 8 and C 4 F 6 .

7. A system for dicing a semiconductor substrate comprising a plurality of ICs, the system comprising:
a cluster tool comprising:
one of a spin coater to apply an aqueous solution of a water soluble material onto the substrate or a vacuum tape module to laminate a dry film of a water soluble material onto the substrate;
a plasma etch chamber to singulate the ICs by plasma etching of the substrate; and
a robotic transfer chamber to transfer a laser scribed substrate from the laser scribe module to the plasma etch module, the robotic transfer chamber coupled to the one of the spin coater or the vacuum tape module;

a laser scribe module to pattern a mask and expose regions of the substrate between the ICs, the mask comprising a layer of the water soluble material; and
a factory interface coupled to the robotic transfer chamber of the cluster tool and coupled to the laser scribe module wherein the semiconductor substrate is transferred between the cluster tool and the laser scribe module through the factory interface.

8. The system of claim 7 , wherein the laser scribe comprises a femtosecond laser having a wavelength less than or equal to 530 nanometers and a pulse width of less than or equal to 500 femtoseconds.

9. The system of claim 7 , wherein the plasma etch chamber is coupled to SF 6 and at least one of C 4 F 8 and C 4 F 6 .

10. The system of claim 7 wherein the one of a spin coater or a vacuum tape module is the spin coater and the system further comprising a hot plate to dry the aqueous solution into the water soluble material.

11. The system of claim 7 wherein the one of a spin coater or a vacuum tape module is the vacuum tape module.

12. A system for dicing a semiconductor substrate comprising a plurality of ICs, the system comprising:
a cluster tool comprising:
a plasma etch module to singulate the ICs by plasma etching of the substrate through a water soluble mask;
a wet process module to wash off the water soluble mask after plasma etching the substrate; and
a robotic transfer chamber to transfer the substrate from the plasma etch module to the wet process module;

a laser scribe module to pattern a mask and expose regions of the substrate between the ICs, the mask comprising a layer of the water soluble material; and
a factory interface coupled to the robotic transfer chamber of the cluster tool and coupled to the laser scribe module wherein the semiconductor substrate is transferred between the cluster tool and the laser scribe module through the factory interface.

13. The system of claim 12 wherein the wet process module of comprises a pressurized water jet.

14. The system of claim 12 , wherein the plasma etch chamber is coupled to SF 6 and at least one of C 4 F 8 and C 4 F 6 .

Assignees

• Lei Wei-Sheng
• Singh Saravjeet
• Yalamanchili Madhava Rao
• Eaton Brad
• Kumar Ajay
• Applied Materials Inc

Inventors

• Lei Wei-Sheng
• Singh Saravjeet
• Yalamanchili Madhava Rao
• Eaton Brad
• Kumar Ajay

Classifications

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title