High definition heater and method of operation

Patent metadata

Field	Value
Publication number	US-9263305-B2
Application number	US-201213599648-A
Country	US
Kind code	B2
Filing date	Aug 30, 2012
Priority date	Aug 30, 2011
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.

First claim

What is claimed is:

1. A heater comprising:
a base plate;
a base heater secured to the base plate, the base heater comprising at least one zone;
a substrate secured to the base heater;
a tuning heater secured to the substrate opposite the base heater, the tuning heater comprising a plurality of zones that is greater in number than the zones of the base heater, and the tuning heater providing lower power than the base heater; and
a chuck secured to the tuning heater opposite the substrate,
wherein the substrate defines a thermal conductivity to dissipate power from the base heater.

2. The heater according to claim 1 , wherein at least one of the base heater and the tuning heater comprise a resistive material with sufficient TCR characteristics such that the at least one base heater and the tuning heater function as both a heater and as a temperature sensor.

3. The heater according to claim 1 , wherein at least one of the base heater and the tuning heater define a layered construction.

4. The heater according to claim 1 , wherein at least one of the base heater and the tuning heater define a polyimide heater.

5. The heater according to claim 1 further comprising a plurality of tuning heaters defining resistive circuits that are offset from resistive circuits of adjacent tuning heaters.

6. The heater according to claim 1 further comprising a plurality of base heaters defining resistive circuits that are offset from resistive circuits of adjacent base heaters.

7. The heater according to claim 1 further comprising a secondary tuning layer secured to a top surface of the chuck.

8. The heater according to claim 1 further comprising a plurality of tuning layers.

9. The heater according to claim 1 , wherein the base heater comprises a plurality of support elements disposed between circuit traces of the base heater.

10. The heater according to claim 9 , wherein the support elements define a split configuration.

11. The heater according to claim 1 , wherein at least one of the base heater and the tuning heater are disposed around a periphery of the chuck.

12. The heater according to claim 1 further comprising a plurality of heat spreaders disposed proximate each of the zones of the tuning heater.

13. The heater according to claim 12 , wherein the heat spreaders are a material selected from the group consisting of Aluminum, Copper, Pyrolytic Graphite, and Aluminum Nitride.

Assignees

• Ptasienski Kevin
• Smith Kevin Robert
• Swanson Cal Thomas
• Schmidt Philip Steven
• Nosrati Mohammad
• Lindley Jacob Robert
• Boldt Allen Norman
• Zhang Sanhong
• Steinhauser Louis P
• Grimard Dennis Stanley
• Watlow Electric Mfg

Inventors

• Ptasienski Kevin
• Smith Kevin Robert
• Swanson Cal Thomas
• Schmidt Philip Steven
• Nosrati Mohammad
• Lindley Jacob Robert
• Boldt Allen Norman
• Zhang Sanhong
• Steinhauser Louis P
• Grimard Dennis Stanley

Classifications

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P72/0432 Primary

  mainly by conduction · CPC title