Integration of pressure or inertial sensors into integrated circuit fabrication and packaging

Patent metadata

Field	Value
Publication number	US-9260294-B2
Application number	US-201314141875-A
Country	US
Kind code	B2
Filing date	Dec 27, 2013
Priority date	Dec 27, 2013
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

The integration of pressure or inertial sensors into an integrated circuit fabrication and packaging flow is described. In one example, a diaphragm is formed by depositing a metal over a first dielectric layer. A second dielectric layer is formed over the diaphragm. A metal mesh layer is formed over the second dielectric. The first dielectric layer is etched under the diaphragm to form a cavity. The cavity is lined with a sealing layer. The cavity is covered to form a chamber adjoining the diaphragm, and the cover is sealed against the cavity.

First claim

What is claimed is:

1. A method comprising:
forming a diaphragm by depositing a metal over a first dielectric layer;
forming a second dielectric layer over the diaphragm;
forming a metal mesh layer over the second dielectric;
etching the first dielectric layer under the diaphragm to form a cavity;
lining the cavity with a sealing layer;
covering the cavity to form a chamber adjoining the diaphragm; and
sealing the cover against the cavity.

2. The method of claim 1 , further comprising forming attachment humps coupled to vias formed in the first dielectric layer and electrically coupled to the diaphragm.

3. The method of claim 1 , further comprising forming metal vias to the diaphragm through the second dielectric layer during forming the metal mesh.

4. The method of claim 1 , wherein forming a metal mesh comprises patterning a photoresist, depositing a metal film and removing the photoresist to form a mesh pattern.

5. The method of claim 1 , wherein etching the first dielectric layer comprises de-paneling the first dielectric layer from a supporting substrate to expose the first dielectric layer, applying a hard mask over the first dielectric layer and etching the dielectric through the mask.

6. The method of claim 1 , wherein the sealing layer comprises silicon nitride.

7. The method of claim 1 , wherein etching the first dielectric layer comprises silicon nitride processing.

8. The method of claim 1 , wherein forming a diaphragm comprising depositing a metal over a peelable core having an organic carrier at its center.

9. The method of claim 1 , further comprising placing a magnet over the metal mesh layer to induce a field in the metal mesh layer in response to diaphragm movement.

10. The method of claim 1 , wherein forming a second dielectric layer comprises coating the diaphragm with a dielectric containing silicon.

11. The method of claim 1 , further comprising forming the first dielectric layer over a peelable substrate and removing the diaphragm and the first dielectric layer from the peelable substrate after forming the metal mesh to expose the first dielectric layer under the diaphragm before etching the first dielectric layer.

12. The method of claim 1 , wherein covering the cavity comprises applying solder resist over the sealing layer.

13. A pressure sensor in an integrated circuit die, the pressure sensor comprising:
a metal sensor diaphragm;
a dielectric over the diaphragm;
a metal mesh over the dielectric;
a cavity under the metal sensor diaphragm;
a sealing layer lining the cavity;
a magnet over the metal mesh to induce a magnetic field in ire the metal mesh in response to diaphragm movement; and
a cover over the cavity to form a chamber adjoining the diaphragm so that movement of the sensor diaphragm is sensed by the metal mesh through the induced field.

14. The pressure sensor of claim 13 , further comprising attachment bumps in the die to connect to an external electrical potential, the attachment bumps being connected to the metal mesh through vias in the die.

15. The pressure sensor of claim 14 , wherein the metal vias extend through the dielectric.

16. The pressure sensor of claim 13 , wherein the sealing layer comprises silicon nitride.

17. A computing system comprising:
a processor;
a memory to store instructions for execution by the processor; and
a pressure sensor in an integrated circuit die of the computing system, the pressure sensor including a metal sensor diaphragm, a dielectric over the diaphragm, a metal mesh over the dielectric, a cavity under the metal sensor diaphragm, a sealing layer lining the cavity, a magnet over the metal mesh to induce a magnetic field in the metal mesh in response to a diaphragm movement, and a cover over the cavity to form a chamber adjoining the diaphragm so that movement of the sensor diaphragm is sensed by the metal mesh through, the induced field.

18. The computing system of claim 17 , wherein the pressure sensor further comprises metal vias to the diaphragm through the second dielectric layer to couple the metal mesh to other components of the integrated circuit die.

Assignees

• Lee Kyu Oh
• Oster Sasha N
• Eid Feras
• Haney Sarah
• Intel Corp

Inventors

• Lee Kyu Oh
• Oster Sasha N
• Eid Feras
• Haney Sarah

Classifications

• B81C2203/0714

  Forming the micromechanical structure with a CMOS process · CPC title

• B81C1/00246 Primary

  Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title

• B81B2201/0264

  Pressure sensors · CPC title

• B81B7/008 Primary

  MEMS characterised by an electronic circuit specially adapted for controlling or driving the same (B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00) · CPC title

• B81B2201/025

  Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242 · CPC title